公开(公告)号：US10923505B2

公开(公告)日：2021-02-16

申请号：US16535447

申请日：2019-08-08

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Feng Guan ,  Lu Wang ,  Woobong Lee ,  Jianhua Du ,  Yang Lv ,  Zhaohui Qiang ,  Guangcai Yuan

IPC: H01L27/12

Abstract: The present disclosure provides a display substrate, a fabricating method thereof, and a display device. The method includes forming a light shielding layer on a surface of a base substrate, and forming a plurality of thin film transistors on a side of the light shielding layer away from the base substrate. Forming a plurality of thin film transistors on a side of the light shielding layer away from the base substrate includes forming a semiconductor layer at a position where an active layer is to be formed in each of the plurality of thin film transistors, generating heat using the light shielding layer, and utilizing the heat to crystallize the semiconductor layer.

公开(公告)号：US11817460B2

公开(公告)日：2023-11-14

申请号：US17263748

申请日：2020-03-27

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Chao Luo ,  Feng Guan ,  Zhi Wang ,  Jianhua Du ,  Yang Lv ,  Zhaohui Qiang ,  Chao Li

IPC: H01L27/12 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L27/1237 ,  H01L27/1222 ,  H01L27/1285 ,  H01L29/66477 ,  H01L29/66765 ,  H01L29/78669 ,  H01L29/78678

Abstract: A thin film transistor includes a gate, a gate insulating layer, an active layer, an ionized amorphous silicon layer, a source and a drain. The gate insulating layer covers the gate. The active layer is disposed on a side of the gate insulating layer away from the gate. The ionized amorphous silicon layer is disposed on a side of the active layer away from the gate, and the ionized amorphous silicon layer is in contact with the gate insulating layer. The source and the drain are disposed on a side of the ionized amorphous silicon layer away from the gate insulating layer, and the source and the drain are coupled to the active layer through the ionized amorphous silicon layer.

公开(公告)号：US11367791B2

公开(公告)日：2022-06-21

申请号：US16473456

申请日：2018-09-05

Applicant: BOE Technology Group Co., Ltd.

Inventor： Zhaohui Qiang ,  Jianhua Du ,  Feng Guan ,  Chunhao Li

IPC: H01L29/786 ,  H01L27/12

Abstract: The present disclosure provides a thin film transistor, a fabricating method thereof, an array substrate, and a display device. The thin film transistor includes: a substrate; a channel region; a heavily doped first semiconductor pattern located on both sides of the channel region; a second semiconductor pattern disposed on the heavily doped first semiconductor pattern; a gate insulating layer covering the channel region and the second semiconductor pattern; a gate pattern disposed on the gate insulating layer, an orthographic projection of the gate pattern on the substrate being within an orthographic projection of the channel region on the substrate; and a source pattern and a drain pattern in contact with the heavily doped first semiconductor pattern through the first via and the second via, respectively.

公开(公告)号：US11251208B2

公开(公告)日：2022-02-15

申请号：US16642734

申请日：2019-03-18

Applicant: BOE Technology Group Co., Ltd.

Inventor： Chao Li ,  Jianhua Du ,  Feng Guan ,  Zhaohui Qiang ,  Zhi Wang ,  Yupeng Gao ,  Yang Lv

IPC: H01L27/144 ,  H01L27/12 ,  H01L31/0352 ,  H01L31/105 ,  H01L31/18

Abstract: A photosensor includes a base substrate; an insulating layer on the base substrate; and a photodiode including a semiconductor junction on a side of the insulating layer away from the base substrate. The semiconductor junction includes a first polarity semiconductor layer, an intrinsic semiconductor layer, and a second polarity semiconductor layer, stacked on the insulating layer. The second polarity semiconductor layer encapsulates a lateral surface of the intrinsic semiconductor layer.

公开(公告)号：US20210151476A1

公开(公告)日：2021-05-20

申请号：US16642734

申请日：2019-03-18

Applicant: BOE Technology Group Co., Ltd.

Inventor： Chao Li ,  Jianhua Du ,  Feng Guan ,  Zhaohui Qiang ,  Zhi Wang ,  Yupeng Gao ,  Yang Lv

IPC: H01L27/144 ,  H01L31/105 ,  H01L31/0352 ,  H01L27/12 ,  H01L31/18

Abstract: A photosensor includes a base substrate; an insulating layer on the base substrate; and a photodiode including a semiconductor junction on a side of the insulating layer away from the base substrate. The semiconductor junction includes a first polarity semiconductor layer, an intrinsic semiconductor layer, and a second polarity semiconductor layer, stacked on the insulating layer. The second polarity semiconductor layer encapsulates a lateral surface of the intrinsic semiconductor layer.

公开(公告)号：US20200381560A1

公开(公告)日：2020-12-03

申请号：US16473456

申请日：2018-09-05

Applicant: BOE Technology Group Co., Ltd.

Inventor： Zhaohui Qiang ,  Jianhua Du ,  Feng Guan ,  Chunhao Li

IPC: H01L29/786 ,  H01L27/12

Abstract: The present disclosure provides a thin film transistor, a fabricating method thereof, an array substrate, and a display device. The thin film transistor includes: a substrate; a channel region; a heavily doped first semiconductor pattern located on both sides of the channel region; a second semiconductor pattern disposed on the heavily doped first semiconductor pattern; a gate insulating layer covering the channel region and the second semiconductor pattern; a gate pattern disposed on the gate insulating layer, an orthographic projection of the gate pattern on the substrate being within an orthographic projection of the channel region on the substrate; and a source pattern and a drain pattern in contact with the heavily doped first semiconductor pattern through the first via and the second via, respectively.