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11.发明授权公开(公告)号：US11239260B2
公开(公告)日：2022-02-01
申请号：US16484414
申请日：2018-10-12
Inventor： Yang Zhang , Tongshang Su , Bin Zhou , Wei Li , Wei Song , Jun Liu
IPC: H01L27/12 , H01L29/786
Abstract: A substrate for an electronic device includes an insulating layer; a via extending into the insulating layer; a light shielding layer in the via; and a thin film transistor comprising an active layer on the light shielding layer and in the via. The light shielding layer is configured to shield light from irradiating on the active layer.
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公开(公告)号：US20210200090A1
公开(公告)日：2021-07-01
申请号：US16086990
申请日：2018-02-12
Inventor： Wei Li , Bin Zhou , Jun Liu , Ning Liu , Yang Zhang , Yingbin Hu
Abstract: A patterning method and a method for manufacturing an array substrate are provided, and the patterning method includes: forming a photolithography auxiliary film and a positive photoresist film in turn on a base substrate provided with a layer to be patterned; subjecting the photolithography auxiliary film and the positive photoresist film to a photolithography process to form a photolithography auxiliary layer pattern and a positive photoresist pattern; patterning the layer to be patterned; and UV irradiating the photolithography auxiliary layer pattern and the positive photoresist pattern and then removing the photolithography auxiliary layer pattern and the positive photoresist pattern.
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公开(公告)号：US10971523B2
公开(公告)日：2021-04-06
申请号：US16405126
申请日：2019-05-07
Inventor： Tongshang Su , Dongfang Wang , Jun Cheng , Jun Liu , Qinghe Wang , Guangyao Li , Liangchen Yan
Abstract: The present disclosure provides a pixel array and a fabrication method thereof. The pixel array includes a plurality of gate lines and a plurality of data lines which are arranged intersected and insulated and a pixel unit disposed at a position where each of the plurality of gate lines and each of the plurality of data lines are intersected. The pixel unit includes a thin film transistor (TFT). The width-to-length ratios of channels of the TFTs are sequentially increased in such a manner that the width-to-length ratios of the channels of the TFTs in the pixel units positioned in a same row (and/or a same column) are sequentially increased along a scanning direction of the gate line coupled to gate electrodes of the TFTs in the same row (and/or along a data writing direction of the data line coupled to the source electrodes of the TFTs in the same column).
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14.发明申请公开(公告)号：US20200168744A1
公开(公告)日：2020-05-28
申请号：US16410823
申请日：2019-05-13
Inventor： Yingbin Hu , Ce Zhao , Yuankui Ding , Jun Wang , Jun Liu , Guangyao Li , Yongchao Huang , Wei Li , Liangchen Yan
IPC: H01L29/786 , H01L29/66
Abstract: A method for manufacturing a thin film transistor includes forming a light shielding layer and a buffer layer covering the light shielding layer on a substrate. The method includes forming an active layer including a peripheral region and a channel region. The method includes forming a gate insulating layer covering the channel region and forming a contact hole exposing the light shielding layer. The method includes forming a source region and a drain region disposed on both sides of the channel region. The method includes forming an electrode layer including a gate electrode, a source electrode and a drain electrode spaced apart one another. The method includes forming a dielectric layer covering the gate electrode, the source electrode, the drain electrode and the buffer layer.
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公开(公告)号：US20200098797A1
公开(公告)日：2020-03-26
申请号：US16399508
申请日：2019-04-30
IPC: H01L27/12 , H01L21/3213 , H01L21/311
Abstract: A display substrate and a method of preparing the same, and a display device are provided, the method including: providing a substrate; forming a switching thin film transistor precursor and a driving thin film transistor precursor on the substrate, each including a semiconductor layer, a gate insulating material layer and a gate metallic layer stacked sequentially above the substrate; forming a photoresist layer above the switching thin film transistor precursor and the driving thin film transistor precursor, and forming an etching mask from the photoresist layer, a first portion of the etching mask at the switching thin film transistor precursor and a second portion of the etching mask at the driving thin film transistor precursor having different shapes; and forming a switching thin film transistor and a driving thin film transistor, by etching processing the switching thin film transistor precursor and the driving thin film transistor precursor with the etching mask.
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Patent Agency Ranking
公开(公告)号：US20200044093A1
公开(公告)日：2020-02-06
申请号：US16398668
申请日：2019-04-30
Inventor： Jun Liu , Bin Zhou , Tongshang Su , Wei Song , Wei Li , Biao Luo , Chaowei Hao
IPC: H01L29/786 , H01L29/49 , H01L29/66 , H01L27/12
Abstract: A thin film transistor and a manufacturing method thereof, and an array substrate are provided. The thin film transistor includes an active layer, a source electrode, a drain electrode, a gate electrode, and a light shielding portion. The source electrode and the drain electrode electrically connect to the active layer, respectively, the gate electrode and the light shielding portion are on same one side of the active layer; in a direction from the source electrode to the drain electrode, the gate electrode is between the source electrode and the drain electrode, and the light shielding portion is at at least one of a group consisting of a spacing between the gate electrode and the source electrode and a spacing between the gate electrode and the drain electrode.
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17.发明申请公开(公告)号：US20200035721A1
公开(公告)日：2020-01-30
申请号：US16337544
申请日：2018-05-29
Inventor： Tongshang Su , Guangcai Yuan , Dongfang Wang , Ce Zhao , Bin Zhou , Jun Liu , Jifeng Shao , Qinghe Wang , Yang Zhang
IPC: H01L27/12 , H01L29/423 , H01L29/66 , H01L29/786 , H01L29/417
Abstract: There are provided a thin-film transistor and a production method thereof, an array substrate, and a display panel. The method comprises forming an active layer, a gate insulating layer, and a gate electrode on a substrate, wherein conductor conversion treatment is performed on both sides of the homogeneous active material layer to obtain an active layer, and the active layer comprises conductor regions located at both sides and a non-conductor region located at the center, wherein a projection of the gate electrode on the substrate is within a projection of the non-conductor region on the substrate, and the distances from the projection of the gate electrode to projections of the two conductor regions on the substrate are each between 0 micrometer and 1 micrometer.
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公开(公告)号：US10439163B2
公开(公告)日：2019-10-08
申请号：US15768972
申请日：2017-10-13
Inventor： Tongshang Su , Guangcai Yuan , Dongfang Wang , Bin Zhou , Ce Zhao , Jun Liu , Ning Liu , Kai Xu , Shengping Du
Abstract: An organic light emitting diode (OLED) display panel and a manufacture method thereof, a display device are disclosed. The method includes providing a base substrate, including a display area and a package area; forming a driving transistor, a passivation layer and an OLED display unit on the base substrate, wherein the OLED display unit and the driving transistor are formed in the display area, the passivation layer is formed in both the display area and the package area and includes a plurality of recesses in the package area and a via hole in the display area, and the via hole and the plurality of recesses are formed by same one patterning process; coating a sealant in the package area to cover the plurality of recesses; and providing a package substrate, the package substrate and the base substrate being assembled together and sealed oppositely by the sealant.
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19.发明申请公开(公告)号：US20190131143A1
公开(公告)日：2019-05-02
申请号：US15983453
申请日：2018-05-18
Inventor： Tongshang Su , Dongfang Wang , Jun Liu , Leilei Cheng , Wei Li , Qinghe Wang , Yang Zhang , Guangcai Yuan
IPC: H01L21/385 , H01L29/786 , H01L29/66
Abstract: In an embodiment, there is provided a method of manufacturing a thin-film transistor. The method includes steps of: forming a gate, a gate insulator layer and an active layer on a base substrate, wherein, the gate and the active layer are provided at upper and lower sides of the gate insulator layer, respectively, and the active layer contains impurity ions therein; and, while implementing an annealing on the active layer, applying a voltage between the active layer and the gate to generate an electrical field therebetween, a direction of the electrical field being configured such that the impurity ions move from the active layer into the gate insulator layer. Meanwhile, there are also provided a thin-film transistor, an array substrate and a display apparatus.
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20.发明授权公开(公告)号：US10120215B2
公开(公告)日：2018-11-06
申请号：US15517660
申请日：2015-10-15
Inventor： Xu Shi , Zhilong Xu , Jun Liu , Xiaojun Wang , Dongqing Li , Shutong Huang , Wei Chen , Lei Zhang
IPC: G02F1/13 , H01L21/683 , B65G47/91 , B65G49/06 , H01L21/673 , H01L21/687 , H01L21/677
Abstract: Embodiments of the present application provide an apparatus for carrying a substrate by an off-line vacuum suction and a method for transporting a substrate. The apparatus includes a carrying frame provided with a clamper, a vacuum suction device and a detaching device arranged on the carrying frame, wherein the vacuum suction device is arranged to suck and fix a substrate and is connectable to and detachable from a vacuum pipeline and the detaching device is arranged to detach the vacuum suction device and the vacuum pipeline from each other while keeping the vacuum suction device to continuously suck the substrate to be transported. The apparatus and the method can improve fixing of the substrate and achieve off-line suction to the substrate.
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