公开(公告)号：US20190382891A1

公开(公告)日：2019-12-19

申请号：US16011381

申请日：2018-06-18

Applicant: Applied Materials, Inc.

Inventor： Shouqian SHAO ,  Jianhua ZHOU ,  Fu-Ting CHANG ,  Yi CUI ,  Jun LI

IPC: C23C16/458 ,  C23C16/455 ,  H01J37/32

Abstract: Embodiments described herein provide an apparatus for providing an inductance at positions that correspond to positions of substrate support pins. The apparatus includes one or more substrate support pins. Each substrate support pin includes a head portion, a first portion, and a second portion. The second portion is an inductor that provides inductance at positions of substrate support pins. The inductance provided by the second portion of the substrate support pin changes the impedance to match the impedance at areas of the substrate support without the substrate support pins. With matched impedance, the plasma density over the areas of the substrate support with the support pins and without the support pins is uniform, leading to improved film thickness uniformity. The uniform film thickness thus reduces or eliminates clouding or the “mura effect”.

公开(公告)号：US20170365449A1

公开(公告)日：2017-12-21

申请号：US15626960

申请日：2017-06-19

Applicant: Applied Materials, Inc.

Inventor： Yi CUI ,  Robin L. TINER ,  Beom Soo PARK ,  Soo Young CHOI ,  Shinichi KURITA

IPC: H01J37/32 ,  C23C16/505 ,  C23C16/458 ,  H05K9/00 ,  H01L21/687

CPC classification number: H01J37/32651 ,  C23C16/4585 ,  C23C16/4586 ,  C23C16/505 ,  H01J37/32449 ,  H01J37/32467 ,  H01J37/32532 ,  H01J37/32577 ,  H01J37/32715 ,  H01J2237/3321 ,  H01L21/68742 ,  H01L21/68785 ,  H05K9/002

Abstract: Embodiments described herein generally relate to a substrate support assembly having a shield cover. In one embodiment, a substrate support assembly is disclosed herein. The substrate support assembly includes a support plate, a plurality of RF return straps, at least one shield cover, and a stem. The support plate is configured to support a substrate. The plurality of RF return straps are coupled to a bottom surface of the support plate. At least one shield cover is coupled to the bottom surface of the support plate, between the plurality of RF return straps and the bottom surface. The stem is coupled to the support plate.

公开(公告)号：US20140272187A1

公开(公告)日：2014-09-18

申请号：US14180339

申请日：2014-02-13

Applicant: Applied Materials, Inc.

Inventor： Tae Kyung WON ,  Yi CUI ,  Beom Soo PARK ,  Soo Young CHOI

IPC: C23C16/02 ,  C23C16/34

CPC classification number: C23C16/345 ,  C23C16/0245

Abstract: Methods of forming dielectric layers on a copper substrate are disclosed herein. In one embodiment, a method of depositing a dielectric layer can include positioning a copper substrate in a process chamber, forming and delivering the cleaning plasma to the substrate to form a cleaned surface on the substrate, forming and delivering the adhesion plasma to the surface of the substrate to form a copper compound thereon and depositing a dielectric layer over the copper compound. In another embodiment, a method of depositing a dielectric layer can include positioning a copper substrate in a process chamber, delivering an adhesion plasma to the copper substrate to form a copper compound and flowing a deposition gas into the process chamber to deposit a dielectric layer over the copper compound, wherein the flow between the adhesion plasma and the deposition gas is continuous.

Abstract translation: 本文公开了在铜基底上形成电介质层的方法。 在一个实施例中，沉积电介质层的方法可以包括将铜衬底定位在处理室中，形成并将清洁等离子体输送到衬底，以在衬底上形成清洁表面，形成并将粘合等离子体输送到 所述基板在其上形成铜化合物并在所述铜化合物上沉积介电层。 在另一个实施例中，沉积电介质层的方法可以包括将铜衬底定位在处理室中，将粘合等离子体输送到铜衬底以形成铜化合物并将沉积气体流入处理室以沉积介电层 铜化合物，其中粘附等离子体和沉积气体之间的流动是连续的。