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公开(公告)号:US11515176B2
公开(公告)日:2022-11-29
申请号:US16847955
申请日:2020-04-14
Applicant: Applied Materials, Inc.
Inventor: Siva Chandrasekar , Satish Radhakrishnan , Rajath Kumar Lakkenahalli Hiriyannaiah , Viren Kalsekar , Vinay Prabhakar
IPC: H01L21/67
Abstract: Exemplary substrate processing systems may include chamber body defining a transfer region. The systems may include a lid plate seated on the chamber body. The lid plate may define a first plurality of apertures through the lid plate and a second plurality of apertures through the lid plate. The systems may include a plurality of lid stacks equal to a number of apertures of the first plurality of apertures defined through the lid plate. Each lid stack of the plurality of lid stacks may include a choke plate seated on the lid plate along a first surface of the choke plate. The choke plate may define a first aperture axially aligned with an associated aperture of the first plurality of apertures. The choke plate may define a second aperture axially aligned with an associated aperture of the second plurality of apertures.
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公开(公告)号:US20210202218A1
公开(公告)日:2021-07-01
申请号:US16728552
申请日:2019-12-27
Applicant: Applied Materials, Inc.
Inventor: Venkata Sharat Chandra Parimi , Satish Radhakrishnan , Xiaoquan Min , Sarah Michelle Bobek , Sungwon Ha , Prashant Kumar Kulshreshtha , Vinay Prabhakar
Abstract: Exemplary semiconductor processing chambers may include a chamber body including sidewalls and a base. The chambers may include a substrate support extending through the base of the chamber body. The substrate support may include a support platen configured to support a semiconductor substrate. The substrate support may include a shaft coupled with the support platen. The substrate support may include a shield coupled with the shaft of the substrate support. The shield may include a plurality of apertures defined through the shield. The substrate support may include a block seated in an aperture of the shield.
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公开(公告)号:US20210166921A1
公开(公告)日:2021-06-03
申请号:US16701986
申请日:2019-12-03
Applicant: Applied Materials, Inc.
Inventor: Elizabeth Neville , Satish Radhakrishnan , Kartik Shah , Vinay Prabhakar , Venkata Sharat Chandra Parimi , Sungwon Ha
IPC: H01J37/32 , H01L21/67 , H01L21/687
Abstract: An example semiconductor processing system may include a chamber body having sidewalls and a base. The processing system may also include a substrate support extending through the base of the chamber body. The substrate support may include a support platen configured to support a semiconductor substrate, and a shaft coupled with the support platen. The processing system may further include a plate coupled with the shaft of the substrate support. The plate may have an emissivity greater than 0.5. In some embodiments, the plate may include a radiation shied disposed proximate the support platen. In some embodiments, the plate may include a pumping plate disposed proximate the base of the chamber body. In some embodiments, the emissivity of the plate may range between about 0.5 and about 0.95.
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14.
公开(公告)号:US10599043B2
公开(公告)日:2020-03-24
申请号:US15675101
申请日:2017-08-11
Applicant: Applied Materials, Inc.
Inventor: Hiroyuki Ogiso , Jianhua Zhou , Zonghui Su , Juan Carlos Rocha-Alvarez , Jeongmin Lee , Karthik Thimmavajjula Narasimha , Rick Gilbert , Sang Heon Park , Abdul Aziz Khaja , Vinay Prabhakar
Abstract: Implementations described herein generally relate to methods for leveling a component above a substrate. In one implementation, a test substrate is placed on a substrate support inside of a processing chamber. A component, such as a mask, is located above the substrate. The component is lowered to a position so that the component and the substrate are in contact. The component is then lifted and the particle distribution on the test substrate is reviewed. Based on the particle distribution, the component may be adjusted. A new test substrate is placed on the substrate support inside of the processing chamber, and the component is lowered to a position so that the component and the new test substrate are in contact. The particle distribution on the new test substrate is reviewed. The process may be repeated until a uniform particle distribution is shown on a test substrate.
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