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公开(公告)号：US12225808B2
公开(公告)日：2025-02-11
申请号：US18395081
申请日：2023-12-22
Applicant: Applied Materials, Inc.
Inventor： Yeishin Tung , Byung Sung Kwak , Robert Jan Visser , Guoheng Zhao , Todd J. Egan , Dinesh Kabra , Gangadhar Banappanavar
Abstract: An organic light-emitting diode (OLED) deposition system includes two deposition chambers, a transfer chamber between the two deposition chambers, a metrology system having one or more sensors to perform measurements of the workpiece within the transfer chamber, and a control system to cause the system to form an organic light-emitting diode layer stack on the workpiece. Vacuum is maintained around the workpiece while the workpiece is transferred between the two deposition chambers and while retaining the workpiece within the transfer chamber. The control system is configured to cause the two deposition chambers to deposit two layers of organic material onto the workpiece, and to receive a first plurality of measurements of the workpiece in the transfer chamber from the metrology system.
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公开(公告)号：US20240130210A1
公开(公告)日：2024-04-18
申请号：US18395081
申请日：2023-12-22
Applicant: Applied Materials, Inc.
Inventor： Yeishin Tung , Byung Sung Kwak , Robert Jan Visser , Guoheng Zhao , Todd J. Egan , Dinesh Kabra , Gangadhar Banappanavar
CPC classification number: H10K71/00 , C23C14/12 , C23C14/24 , C23C14/50 , C23C14/54 , C23C14/568 , H10K71/164 , H10K71/70
Abstract: An organic light-emitting diode (OLED) deposition system includes two deposition chambers, a transfer chamber between the two deposition chambers, a metrology system having one or more sensors to perform measurements of the workpiece within the transfer chamber, and a control system to cause the system to form an organic light-emitting diode layer stack on the workpiece. Vacuum is maintained around the workpiece while the workpiece is transferred between the two deposition chambers and while retaining the workpiece within the transfer chamber. The control system is configured to cause the two deposition chambers to deposit two layers of organic material onto the workpiece, and to receive a first plurality of measurements of the workpiece in the transfer chamber from the metrology system.
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公开(公告)号：US11441992B2
公开(公告)日：2022-09-13
申请号：US16885257
申请日：2020-05-27
Applicant: Applied Materials, Inc.
Inventor： Mehdi Vaez-Iravani , Todd Egan , Guoheng Zhao
Abstract: Examples disclosed herein generally relate to systems and methods for detecting the size of a particle in a fluid. In one example, a system for imaging a particle includes a first imaging device. The first imaging device includes a lens and a digital detector. The system further includes a laser source. He laser source is configured to emit a first laser beam and a second laser beam. The digital detector is configured to accumulate a metric of an intensity of an accumulated light that passes through the lens. The accumulated light is scattered from the particle. The accumulated light includes light from the first laser beam and the second laser beam.
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公开(公告)号：US11150078B1
公开(公告)日：2021-10-19
申请号：US16831643
申请日：2020-03-26
Applicant: Applied Materials, Inc.
Inventor： Guoheng Zhao , Mehdi Vaez-Iravani
Abstract: Methods for performing imaging reflectometry measurements include determining a representative reflectance intensity value using multiple images of a measurement area that includes a particular structure and/or using a plurality of pixels each associated with the particular structure within the measurement area. A parameter associated with the particular structure is determined using the representative reflectance intensity value.
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公开(公告)号：US20210302149A1
公开(公告)日：2021-09-30
申请号：US16831643
申请日：2020-03-26
Applicant: Applied Materials, Inc.
Inventor： Guoheng Zhao , Mehdi Vaez-lravani
IPC: G01B9/02
Abstract: Methods for performing imaging reflectometry measurements include determining a representative reflectance intensity value using multiple images of a measurement area that includes a particular structure and/or using a plurality of pixels each associated with the particular structure within the measurement area. A parameter associated with the particular structure is determined using the representative reflectance intensity value.
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Patent Agency Ranking
公开(公告)号：US20210226182A1
公开(公告)日：2021-07-22
申请号：US17152688
申请日：2021-01-19
Applicant: Applied Materials, Inc.
Inventor： Yeishin Tung , Byung Sung Kwak , Robert Jan Visser , Guoheng Zhao , Todd J. Egan
Abstract: An organic light-emitting diode (OLED) deposition system includes two deposition chambers, a transfer chamber between the two deposition chambers, a metrology system having one or more sensors to perform measurements of the workpiece within the transfer chamber, and a control system to cause the system to form an organic light-emitting diode layer stack on the workpiece. Vacuum is maintained around the workpiece while the workpiece is transferred between the two deposition chambers and while retaining the workpiece within the transfer chamber. The control system is configured to cause the two deposition chambers to deposit two layers of organic material onto the workpiece, and to receive a first plurality of measurements of the workpiece in the transfer chamber from the metrology system.
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公开(公告)号：US10474041B1
公开(公告)日：2019-11-12
申请号：US16267359
申请日：2019-02-04
Applicant: Applied Materials, Inc.
Inventor： Guoheng Zhao , Jeremy Rolfe Nesbitt , Christopher Dennis Bencher , Mehdi Vaez-Iravani
Abstract: The present disclosure generally relates to lithography devices comprising an autofocus system. The autofocus system is configured to individually focus and adjust a plurality of digital micromirror devices. The autofocus system comprises a single light beam and a diffractive optical element configured to split the single light beam into two or more split beams. The two or more split beams are directed to a beam splitter. The two or more split beams are then reflected off the surface of a substrate to at least one position sensor. The position sensor is configured to measure the position of each of the two or more split beams. At least one digital micromirror device is then individually adjusted based on the measured position to adjust the focus of the at least one digital micromirror device with respect to surface height and tilt variations of the substrate.
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公开(公告)号：US11609183B2
公开(公告)日：2023-03-21
申请号：US16996579
申请日：2020-08-18
Applicant: Applied Materials, Inc.
Inventor： Todd J. Egan , Avishek Ghosh , Edward W. Budiarto , Guoheng Zhao
Abstract: Implementations disclosed describe an optical inspection device comprising a source of light to direct a light beam to a location on a surface of a wafer, the wafer being transported from a processing chamber, wherein the light beam is to generate, a reflected light, an optical sensor to collect a first data representative of a direction of the first reflected light, collect a second data representative of a plurality of values characterizing intensity of the reflected light at a corresponding one of a plurality of wavelengths, and a processing device, in communication with the optical sensor, to determine, using the first data, a position of the surface of the wafer; retrieve calibration data, and determine, using the position of the surface of the wafer, the second data, and the calibration data, a characteristic representative of a quality of the wafer.
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公开(公告)号：US20220327725A1
公开(公告)日：2022-10-13
申请号：US17852013
申请日：2022-06-28
Applicant: Applied Materials, Inc.
Inventor： Mehdi Vaez-Iravani , Guoheng Zhao
Abstract: Methods for detecting areas of localized tilt on a sample using imaging reflectometry measurements include obtaining a first image without blocking any light reflected from the sample and obtaining a second image while blocking some light reflected from the sample at the aperture plane. The areas of localized tilt are detected by comparing first reflectance intensity values of pixels in the first image with second reflectance intensity values of corresponding pixels in the second image.
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公开(公告)号：US11417010B2
公开(公告)日：2022-08-16
申请号：US16877866
申请日：2020-05-19
Applicant: Applied Materials, Inc.
Inventor： Mehdi Vaez-Iravani , Guoheng Zhao
Abstract: Methods for detecting areas of localized tilt on a sample using imaging reflectometry measurements include obtaining a first image without blocking any light reflected from the sample and obtaining a second image while blocking some light reflected from the sample at the aperture plane. The areas of localized tilt are detected by comparing first reflectance intensity values of pixels in the first image with second reflectance intensity values of corresponding pixels in the second image.
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