公开(公告)号：US20210262093A1

公开(公告)日：2021-08-26

申请号：US17317418

申请日：2021-05-11

Applicant: Applied Materials, Inc.

Inventor： Kartik SHAH ,  Vishwas Kumar PANDEY ,  Kailash PRADHAN ,  Sairaju TALLAVARJULA ,  Rene GEORGE ,  Eric Kihara SHONO ,  Philip A. BOTTINI ,  Roger CURTIS

IPC: C23C16/455 ,  C23C16/44 ,  H01L21/67 ,  C23C14/56

Abstract: A gas supply member includes a first side opposite a second side and an inner surface defining a first opening extending between the first and second sides. The gas supply member includes a third side orthogonal to the first side, the third side includes a first extension that has a face partially defining the second side, and the first extension includes a first plurality of holes extending through the first extension to the face. The gas supply member includes a fourth side opposite the third side, the fourth side includes a protrusion that has a face partially defining the second side. The gas supply member also includes a baffle disposed adjacent to the inner surface, the baffle includes a first portion extending from the inner surface and a second portion attached to the first portion, and the second portion orthogonal to the first portion and parallel to the third side.

公开(公告)号：US20210074505A1

公开(公告)日：2021-03-11

申请号：US17102051

申请日：2020-11-23

Applicant: Applied Materials, Inc.

Inventor： Eric Kihara SHONO ,  Vishwas Kumar PANDEY ,  Christopher S. OLSEN ,  Hansel LO ,  Agus Sofian TJANDRA ,  Taewan KIM ,  Tobin KAUFMAN-OSBORN

IPC: H01J37/04 ,  H01L21/67 ,  H01J37/20

Abstract: In one example, a chamber inlet assembly includes a chamber inlet, an outer coupling for a delivery line, and an inner coupling for a processing region of a processing chamber. The inner coupling and the outer coupling are on inner and outer ends, respectively, of the chamber inlet, wherein a cross-sectional area of the inner coupling is larger than a cross-sectional area of the outer coupling. The chamber inlet assembly also includes a longitudinal profile including the inner and outer ends and a first side and a second side, the first and second sides being on opposite sides of the chamber inlet, wherein a shape of the longitudinal profile comprises at least one of triangular, modified triangular, trapezoidal, modified trapezoidal, rectangular, modified rectangular, rhomboidal, and modified rhomboidal. The chamber inlet assembly also includes cassette including the chamber inlet and configured to set into a side wall of the processing chamber.

公开(公告)号：US20190228951A1

公开(公告)日：2019-07-25

申请号：US16230917

申请日：2018-12-21

Applicant: Applied Materials, Inc.

Inventor： Vishwas Kumar PANDEY ,  Kartik SHAH ,  Christopher S. OLSEN ,  Agus Sofian TJANDRA ,  Hansel LO ,  Eric Kihara SHONO ,  Hemantha RAJU

IPC: H01J37/32 ,  C23C16/455

Abstract: Embodiments of the present disclosure generally relate to a processing chamber for conformal oxidation of high aspect ratio structures. The processing chamber includes a chamber body with a first side and a second side opposite the first side, and a flow assembly disposed in the first side. The flow assembly includes a flow divider to direct fluid flow away from a center of a substrate disposed in a processing region of the processing chamber. The flow divider includes a crescent shaped first side, a top, and a bottom. The processing chamber also includes a distributed pumping structure located adjacent to the second side. The flow assembly is designed to reduce flow constriction of the radicals, leading to increased radical concentration and flux.

公开(公告)号：US20240162011A1

公开(公告)日：2024-05-16

申请号：US17987679

申请日：2022-11-15

Applicant: Applied Materials, Inc.

Inventor： Eric Kihara SHONO ,  Vladimir NAGORNY ,  Rene GEORGE ,  Vilen K. NESTOROV ,  Martin John RIPLEY ,  Christopher S. OLSEN

IPC: H01J37/32

CPC classification number: H01J37/32357 ,  H01J37/32339 ,  H01J37/3244

Abstract: Embodiments of the present disclosure relate to methods and apparatuses of processing a substrate. The apparatus includes a process chamber, the process chamber including a chamber body, a substrate support, and a remote plasma source. The substrate support is configured to support a substrate within the processing region. The remote plasma source is coupled to the chamber body through a connector. The remote plasma source includes a body, an inlet, an inductive coil, and one or more UV sources. The body has a first end, a second end, and a tube spanning between the first end and the second end. The inlet is coupled to a gas source configured to introduce one or more gases into the body through the first end of the body. The inductive coil loops around the tube. The one or more UV sources are coupled to the first end of the body.

公开(公告)号：US20210322934A1

公开(公告)日：2021-10-21

申请号：US17365791

申请日：2021-07-01

Applicant: Applied Materials, Inc.

Inventor： Vishwas Kumar PANDEY ,  Lara HAWRYLCHAK ,  Eric Kihara SHONO ,  Kartik SHAH ,  Christopher S. OLSEN ,  Sairaju TALLAVARJULA ,  Kailash PRADHAN ,  Rene GEORGE ,  Johanes F. SWENBERG ,  Stephen MOFFATT

IPC: B01F3/02 ,  B01J8/22 ,  H01L21/67 ,  B01J4/00 ,  C23C16/455

Abstract: Gas injectors for providing uniform flow of fluid are provided herein. The gas injector includes a plenum body. The plenum body includes a recess, a protrusion adjacent to the recess and extending laterally away from the plenum body, and a plurality of nozzles extending laterally from an exterior surface of the plenum body. The plenum body has a plurality of holes in an exterior wall of the plenum body. Each nozzle is in fluid communication with an interior volume of the plenum body. By directing the flow of fluid, the gas injector provides for a uniform deposition.

公开(公告)号：US20190228942A1

公开(公告)日：2019-07-25

申请号：US16248384

申请日：2019-01-15

Applicant: Applied Materials, Inc.

Inventor： Eric Kihara SHONO ,  Vishwas Kumar PANDEY ,  Christopher S. OLSEN ,  Hansel LO ,  Agus Sofian TJANDRA ,  Taewan KIM ,  Tobin KAUFMAN-OSBORN

IPC: H01J37/04 ,  H01J37/20 ,  H01L21/67

Abstract: In one example, a chamber inlet assembly includes a chamber inlet, an outer coupling for a delivery line, and an inner coupling for a processing region of a processing chamber. The inner coupling and the outer coupling are on inner and outer ends, respectively, of the chamber inlet, wherein a cross-sectional area of the inner coupling is larger than a cross-sectional area of the outer coupling. The chamber inlet assembly also includes a longitudinal profile including the inner and outer ends and a first side and a second side, the first and second sides being on opposite sides of the chamber inlet, wherein a shape of the longitudinal profile comprises at least one of triangular, modified triangular, trapezoidal, modified trapezoidal, rectangular, modified rectangular, rhomboidal, and modified rhomboidal. The chamber inlet assembly also includes cassette including the chamber inlet and configured to set into a side wall of the processing chamber.

公开(公告)号：US20190105614A1

公开(公告)日：2019-04-11

申请号：US16116531

申请日：2018-08-29

Applicant: Applied Materials, Inc.

Inventor： Vishwas Kumar PANDEY ,  Lara HAWRYLCHAK ,  Eric Kihara SHONO ,  Kartik SHAH ,  Christopher S. OLSEN ,  Sairaju TALLAVARJULA ,  Kailash PRADHAN ,  Rene GEORGE ,  Johanes S. SWENBERG ,  Stephen MOFFATT

IPC: B01F3/02 ,  H01L21/67 ,  B01J8/22

Abstract: Gas injectors for providing uniform flow of fluid are provided herein. The gas injector includes a plenum body. The plenum body includes a recess, a protrusion adjacent to the recess and extending laterally away from the plenum body, and a plurality of nozzles extending laterally from an exterior surface of the plenum body. The plenum body has a plurality of holes in an exterior wall of the plenum body. Each nozzle is in fluid communication with an interior volume of the plenum body. By directing the flow of fluid, the gas injector provides for a uniform deposition.

公开(公告)号：US20180347045A1

公开(公告)日：2018-12-06

申请号：US15937076

申请日：2018-03-27

Applicant: Applied Materials, Inc.

Inventor： Christopher S. OLSEN ,  Eric Kihara SHONO ,  Lara HAWRYLCHAK ,  Agus Sofian TJANDRA ,  Chaitanya A. PRASAD

IPC: C23C16/455 ,  C23C16/50 ,  H01L21/67 ,  H01J37/32

Abstract: Embodiments of the present disclosure generally relate to a process chamber for conformal oxidation of high aspect ratio structures. The process chamber includes a liner assembly located in a first side of a chamber body and two pumping ports located in a substrate support portion adjacent a second side of the chamber body opposite the first side. The liner assembly includes a flow divider to direct fluid flow away from a center of a substrate disposed in a processing region of the process chamber. The liner assembly may be fabricated from quartz minimize interaction with process gases, such as radicals. The liner assembly is designed to reduce flow constriction of the radicals, leading to increased radical concentration and flux. The two pumping ports can be individually controlled to tune the flow of the radicals through the processing region of the process chamber.

公开(公告)号：US20240350994A1

公开(公告)日：2024-10-24

申请号：US18138367

申请日：2023-04-24

Applicant: Applied Materials, Inc.

Inventor： Christopher S. OLSEN ,  Sameh HELMY ,  Hansel LO ,  Eric Kihara SHONO

IPC: B01J6/00

CPC classification number: B01J6/008 ,  B01J2219/00594 ,  B01J2219/00959

Abstract: Systems and methods of orifice driven hydroxyl combustion oxidation include introducing a first gas via at least a first orifice into a processing chamber having a substrate disposed on a substrate support. A second gas is introduced into the processing chamber via a plurality of second orifices. The plurality of second orifices are oriented substantially perpendicular to the at least a first orifice. A radical is produced as a function of the first gas and the second gas while heating the chamber.

公开(公告)号：US20230407471A1

公开(公告)日：2023-12-21

申请号：US18205415

申请日：2023-06-02

Applicant: Applied Materials, Inc.

Inventor： Vishwas Kumar PANDEY ,  Eric Kihara SHONO ,  Kartik SHAH ,  Christopher S. OLSEN ,  Agus Sofian TJANDRA ,  Tobin KAUFMAN-OSBORN ,  Taewan KIM ,  Hansel LO

IPC: C23C16/452 ,  C23C16/455 ,  B01F23/10 ,  B01F25/421 ,  H01J37/32 ,  B01F25/10 ,  B01F25/314 ,  B01F35/511 ,  H01L21/67

CPC classification number: C23C16/452 ,  C23C16/45548 ,  C23C16/45536 ,  B01F23/19 ,  B01F25/421 ,  C23C16/45561 ,  H01J37/3244 ,  B01F23/10 ,  B01F25/102 ,  B01F25/3141 ,  B01F25/31423 ,  B01F35/511 ,  H01J37/32357 ,  H01L21/67017

Abstract: The present disclosure generally provides methods of providing at least metastable radical molecular species and/or radical atomic species to a processing volume of a process chamber during an electronic device fabrication process, and apparatus related thereto. In one embodiment, the apparatus is a gas injection assembly disposed between a remote plasma source and a process chamber. The gas injection assembly includes a body, a dielectric liner disposed in the body that defines a gas mixing volume, a first flange to couple the gas injection assembly to a process chamber, and a second flange to couple the gas injection assembly to the remote plasma source. The gas injection assembly further includes one or more gas injection ports formed through the body and the liner.