公开(公告)号：US20160099162A1

公开(公告)日：2016-04-07

申请号：US14765872

申请日：2014-04-30

Applicant: APPLIED MATERIALS, INC.

Inventor： Siu Tang NG ,  Changhun LEE ,  Huutri DAO ,  Adam LANE ,  Michael D. WILLWERTH

IPC: H01L21/683 ,  H01J37/32

Abstract: Embodiments of the invention provide a single ring comprising a circular ring-shaped body with an inner surface, closest in proximity to a centerline of the body, and an outer surface opposite the inner surface. The body has a bottom surface with a slot formed therein and a top surface with an outer end, adjacent to the outer surface, and an inner end adjacent to a slope extending, towards the centerline, down to a step on the inner surface. The body has a lip, disposed on the inner surface extending out from a vertical face below the step toward the centerline of the body, and is configured to support a substrate thereon. The body is sized such that a gap of less than about 2 mm is formed on the lip between the substrate and the vertical face of the step.

Abstract translation: 本发明的实施例提供一种单环，其包括具有内表面的圆形环形体，其最接近身体的中心线，以及与内表面相对的外表面。 主体具有形成在其中的槽的底表面和具有与外表面相邻的外端的顶表面，以及与朝向中心线向下延伸到内表面上的台阶的斜面相邻的斜面的内端。 本体具有唇部，其设置在从台阶下方的垂直面朝向身体的中心线延伸的内表面上，并且构造成在其上支撑基底。 本体的尺寸使得在基板和台阶的垂直面之间的唇缘上形成小于约2mm的间隙。

公开(公告)号：US20150064880A1

公开(公告)日：2015-03-05

申请号：US14015780

申请日：2013-08-30

Applicant: APPLIED MATERIALS, INC.

Inventor： Jun Wan KIM ,  Hun Sang KIM ,  Changhun LEE ,  Ho Jeong KIM ,  Yi ZHOU

IPC: H01L21/322

CPC classification number: H01L21/02057

Abstract: Methods for performing post etch treatments on silicon surfaces etched using halogen chemistry are provided. The methods may be performed in-situ a chamber in which the silicon surfaces where etch, ex-situ the chamber, or in a hybrid process that combines both in-situ and ex-situ post etch treatment processes. In one embodiment the post etch treatment process includes exposing a substrate having a silicon surface etched using halogen chemistry to a gas mixture comprising CxHy and oxygen, wherein x and y are integers, forming a plasma from the gas mixture, binding halogen residues with species comprising the plasma to form non-volatile halogen containing elements, and pumping the non-volatile halogen containing elements from a chamber containing the substrate.

Abstract translation: 提供了使用卤素化学法蚀刻的硅表面上进行后蚀刻处理的方法。 这些方法可以原位执行，其中硅表面在其中蚀刻，非原位的室或在组合原位和非原位后蚀刻处理工艺的混合工艺中。 在一个实施例中，后蚀刻处理工艺包括将具有使用卤素化学物质蚀刻的硅表面的衬底暴露于包含C x H y和氧的气体混合物，其中x和y是整数，从气体混合物形成等离子体，将卤素残基与包含 所述等离子体形成非挥发性含卤素元素，并且从含有所述基底的室泵送所述非挥发性含卤素元素。