METHODS FOR REMOVING CONTAMINATION FROM SURFACES IN SUBSTRATE PROCESSING SYSTEMS
    1.
    发明申请
    METHODS FOR REMOVING CONTAMINATION FROM SURFACES IN SUBSTRATE PROCESSING SYSTEMS 有权
    在基板处理系统中去除表面污染的方法

    公开(公告)号:US20160293384A1

    公开(公告)日:2016-10-06

    申请号:US14698556

    申请日:2015-04-28

    Abstract: Methods for removing contamination from a surface disposed in a substrate processing system are provided herein. In some embodiments, a method for removing contaminants from a surface includes: providing a first process gas comprising a chlorine containing gas, a hydrogen containing gas, and an inert gas to a process chamber having the surface disposed within the process chamber; igniting the first process gas to form a plasma from the first process gas; and exposing the surface to the plasma to remove contaminants from the surface. In some embodiments, the surface is an exposed surface of a process chamber component. In some embodiments, the surface is a surface of a first layer disposed atop a substrate, such as a semiconductor wafer.

    Abstract translation: 本文提供了从设置在基板处理系统中的表面去除污染物的方法。 在一些实施例中,用于从表面去除污染物的方法包括:向具有设置在处理室内的表面的处理室提供包含含氯气体,含氢气体和惰性气体的第一工艺气体; 点燃第一工艺气体以形成来自第一工艺气体的等离子体; 并将表面暴露于等离子体以从表面去除污染物。 在一些实施例中,表面是处理室部件的暴露表面。 在一些实施例中,表面是设置在诸如半导体晶片的衬底上的第一层的表面。

    SINGLE RING DESIGN FOR HIGH YIELD, SUBSTRATE EXTREME EDGE DEFECT REDUCTION IN ICP PLASMA PROCESSING CHAMBER
    2.
    发明申请
    SINGLE RING DESIGN FOR HIGH YIELD, SUBSTRATE EXTREME EDGE DEFECT REDUCTION IN ICP PLASMA PROCESSING CHAMBER 审中-公开
    ICP等离子体加工室的单层环形设计,基板极限边缘缺陷减少

    公开(公告)号:US20160099162A1

    公开(公告)日:2016-04-07

    申请号:US14765872

    申请日:2014-04-30

    Abstract: Embodiments of the invention provide a single ring comprising a circular ring-shaped body with an inner surface, closest in proximity to a centerline of the body, and an outer surface opposite the inner surface. The body has a bottom surface with a slot formed therein and a top surface with an outer end, adjacent to the outer surface, and an inner end adjacent to a slope extending, towards the centerline, down to a step on the inner surface. The body has a lip, disposed on the inner surface extending out from a vertical face below the step toward the centerline of the body, and is configured to support a substrate thereon. The body is sized such that a gap of less than about 2 mm is formed on the lip between the substrate and the vertical face of the step.

    Abstract translation: 本发明的实施例提供一种单环,其包括具有内表面的圆形环形体,其最接近身体的中心线,以及与内表面相对的外表面。 主体具有形成在其中的槽的底表面和具有与外表面相邻的外端的顶表面,以及与朝向中心线向下延伸到内表面上的台阶的斜面相邻的斜面的内端。 本体具有唇部,其设置在从台阶下方的垂直面朝向身体的中心线延伸的内表面上,并且构造成在其上支撑基底。 本体的尺寸使得在基板和台阶的垂直面之间的唇缘上形成小于约2mm的间隙。

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