Abstract:
Disclosed herein are global shutter image sensors and methods of operating such image sensors. An image sensor includes a semiconductor wafer having a light receiving surface opposite an electrical connection surface; an oxide extending from the light receiving surface toward the electrical connection surface and at least partially surrounding a pixel region; a photodiode disposed within the pixel region; and a set of storage nodes disposed under the photodiode, between the photodiode and the electrical connection surface. The set of storage nodes comprises a first storage node and a second storage node. The storage nodes may be disposed vertically beneath the photodiode, or side by side.
Abstract:
An image capture device is described. The image capture device includes an array of pixels. Each pixel includes a 2×2 array of photodetectors. The image capture device also includes an array of 1×2 on chip lenses (OCLs) disposed over the array of pixels. For each pixel in the array of pixels, a respective pair of adjacent 1×2 OCLs is disposed over a pixel, with each respective pair of adjacent 1×2 OCLs including a respective first 1×2 OCL disposed over a first photodetector and a respective second photodetector in the 2×2 array of photodetectors for the pixel, and a second 1×2 OCL disposed over a third photodetector and a fourth photodetector in the 2×2 array of photodetectors for the pixel.
Abstract:
Apparatuses and methods for charge transfer in image sensors are disclosed. One example of an image sensor pixel may include a first charge storage node and a second charge storage node. A transfer circuit may be coupled between the first and second charge storage nodes, and the transfer circuit may have a first region proximate the first charge storage node and configured to have a first potential. The transfer circuit may also have a second region proximate the second charge storage node configured to have a second, higher potential. An input node may be configured to control the first and second potentials based on a transfer signal provided to the input node.
Abstract:
Imaging apparatus (20) includes a photosensitive medium (22) and a bias electrode (32), which is at least partially transparent, overlying the photosensitive medium. An array of pixel circuits (26) is formed on a semiconductor substrate (30). Each pixel circuit includes a pixel electrode (24) coupled to collect the charge carriers from the photosensitive medium; a readout circuit (75) configured to output a signal indicative of a quantity of the charge carriers collected by the pixel electrode; a skimming gate (48) coupled between the pixel electrode and the readout circuit; and a shutter gate (46) coupled in parallel with the skimming gate between a node (74) in the pixel circuit and a sink site. The shutter gate and the skimming gate are opened sequentially in each of a sequence of image frames so as to apply a global shutter to the array and then to read out the collected charge carriers via the skimming gate to the readout circuit.
Abstract:
Pixel binning is performed by summing charge from some pixels positioned diagonally in a pixel array. Pixel signals output from pixels positioned diagonally in the pixel array may be combined on the output lines. A signal representing summed charge produces a binned 2×1 cluster. A signal representing combined voltage signals produces a binned 2×1 cluster. A signal representing summed charge and a signal representing combined pixel signals can be combined digitally to produce a binned 2×2 pixel. Orthogonal binning may be performed on other pixels in the pixel array by summing charge on respective common sense regions and then combining the voltage signals that represent the summed charge on respective output lines.
Abstract:
An imaging area in an image sensor includes a plurality of photo detectors. A light shield is disposed over a portion of two photo detectors to partially block light incident on the two photo detectors. The two photo detectors and the light shield combine to form an asymmetrical pixel pair. The two photo detectors in the asymmetrical pixel pair can be two adjacent photo detectors. The light shield can be disposed over contiguous portions of the two adjacent photo detectors. A color filter array can be disposed over the plurality of photo detectors. The filter elements disposed over the two photo detectors can filter light representing the same color or different colors.
Abstract:
A system and method for producing a digital image. The method may compensate for cross-talk between adjacent pixels and reduce the effect of auto-focus elements integrated into a pixel array of an image sensor. A set of coefficients is obtained, where the set of coefficients represent a relative measurement between two or more pixels in the pixel array and may be obtained from a calibration operation. A predictive function is constructed based on the set of coefficients. A compensated pixel value for at least one pixel of the image sensor is calculated using the predictive function. A digital image is created based in part on the compensated value.
Abstract:
An electronic device includes an image sensor, a memory, and a processor operably connected to the image sensor and the memory. A pixel array in the image sensor includes at least one pixel that is configured as an auto-focus pixel that is at least partially shielded from light by a shielding element. The memory stores computer-readable instructions, and the processor is adapted to produce a digital image by executing the computer-readable instructions for obtaining a plurality of coefficients representing a relationship between a ratio of two affected pixels and a ratio of two non-affected pixels in the pixel array, constructing a predictive function based on the plurality of coefficients, and computing a compensated pixel value for at least one pixel of the image sensor using the predictive function. A digital image can be created based in part on the compensated pixel value.
Abstract:
A method of operating an image sensor. Charge accumulated in a photodiode during a first sub-exposure may be selectively stored in a storage node responsive to a first control signal. Charge accumulated in the photodiode during a first reset period may be selectively discarded responsive to a second control signal. Charge accumulated in the photodiode during a second sub-exposure may be selectively stored responsive to the first control signal. Charge stored in the storage node from the first and second sub-exposures may be transferred to a floating diffusion node responsive to a third control signal.
Abstract:
An image sensor for an electronic device. The image sensor includes a first light sensitive element for collecting charge and having a first saturation value and a well surrounding at least a portion of the first light sensitive element and having a first doping concentration. The image sensor further includes a bridge region defined in the well and in communication with the first light sensitive element and having a second doping concentration and a blooming node in communication with the bridge region and a voltage source. The second doping concentration is less than the first doping concentration and when light sensitive element collects sufficient charge to reach the first saturation value, additional charge received by the light sensitive element travels to the blooming node via the bridge region.