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1.
公开(公告)号:US20220320174A1
公开(公告)日:2022-10-06
申请号:US17707495
申请日:2022-03-29
Applicant: Apple Inc.
Inventor: Dajiang Yang , Hong Wei Lee , Xiaofeng Fan , Oray O. Cellek , Xiangli Li , Kai Shen
IPC: H01L27/146 , G02B3/00 , H04N5/3745 , H04N5/353 , H04N5/33
Abstract: Disclosed herein are global shutter image sensors and methods of operating such image sensors. An image sensor includes a semiconductor wafer having a light receiving surface opposite an electrical connection surface; an oxide extending from the light receiving surface toward the electrical connection surface and at least partially surrounding a pixel region; a photodiode disposed within the pixel region; and a set of storage nodes disposed under the photodiode, between the photodiode and the electrical connection surface. The set of storage nodes comprises a first storage node and a second storage node. The storage nodes may be disposed vertically beneath the photodiode, or side by side.
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2.
公开(公告)号:US12274099B2
公开(公告)日:2025-04-08
申请号:US17707495
申请日:2022-03-29
Applicant: Apple Inc.
Inventor: Dajiang Yang , Hong Wei Lee , Xiaofeng Fan , Oray O. Cellek , Xiangli Li , Kai Shen
IPC: H01L27/146 , G02B3/00 , H04N25/20 , H04N25/532 , H04N25/771 , H10F39/00 , H10F39/18
Abstract: Disclosed herein are global shutter image sensors and methods of operating such image sensors. An image sensor includes a semiconductor wafer having a light receiving surface opposite an electrical connection surface; an oxide extending from the light receiving surface toward the electrical connection surface and at least partially surrounding a pixel region; a photodiode disposed within the pixel region; and a set of storage nodes disposed under the photodiode, between the photodiode and the electrical connection surface. The set of storage nodes comprises a first storage node and a second storage node. The storage nodes may be disposed vertically beneath the photodiode, or side by side.
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