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11.发明授权公开(公告)号：US11311718B2
公开(公告)日：2022-04-26
申请号：US16379710
申请日：2019-04-09
摘要： Described herein are microelectrode devices to provide localized neural recording or neural stimulation to a neurological target. The device includes a plurality of electrodes disposed along the shafts of deployable flexible pins. The deployable flexible pins are enclosed within an elongated probe shaft and can be expanded from their enclosure. Additionally, a specifically manufactured outer housing can be coupled to at least a portion of the elongated probe shaft. During deployment of the flexible pins the outer housing of the microelectrode device reduces friction between the flexible pins and the probe shaft and reduces delamination of the flexible pins during deployment.
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12.发明授权公开(公告)号：US10966620B2
公开(公告)日：2021-04-06
申请号：US15311082
申请日：2015-05-15
摘要： Described herein are microelectrode devices to provide localized neural recording or neural stimulation to a neurological target. The device includes a plurality of electrodes disposed along the shafts of deployable flexible pins. The deployable flexible pins are enclosed within an elongated probe shaft, and can be expanded from their enclosure. Additionally, a specifically manufactured outer housing can be coupled to at least a portion of the elongated probe shaft. During deployment of the flexible pins the outer housing of the microelectrode device reduces friction between the flexible pins and the probe shaft and reduces delamination of the flexible pins during deployment.
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13.发明申请公开(公告)号：US20190232050A1
公开(公告)日：2019-08-01
申请号：US16379710
申请日：2019-04-09
CPC分类号： A61N1/0534 , A61B5/04001 , A61B5/0482 , A61B5/6868 , A61N1/0551 , A61N1/36071 , A61N1/36135 , A61N1/37247
摘要： Described herein are microelectrode devices to provide localized neural recording or neural stimulation to a neurological target. The device includes a plurality of electrodes disposed along the shafts of deployable flexible pins. The deployable flexible pins are enclosed within an elongated probe shaft and can be expanded from their enclosure. Additionally, a specifically manufactured outer housing can be coupled to at least a portion of the elongated probe shaft. During deployment of the flexible pins the outer housing of the microelectrode device reduces friction between the flexible pins and the probe shaft and reduces delamination of the flexible pins during deployment.
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公开(公告)号：US10065031B2
公开(公告)日：2018-09-04
申请号：US15281468
申请日：2016-09-30
摘要： The present disclosure discusses a system and methods for a deep brain stimulation lead. More particularly, the disclosure discusses a stimulation lead that includes one or more silicon based barrier layers within a MEMS film. The silicon based barrier layers can improve device reliability and durability. The silicon based barrier layers can also improve adhesion between the layers of the MEMS film.
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公开(公告)号：US20180161574A1
公开(公告)日：2018-06-14
申请号：US15878066
申请日：2018-01-23
发明人： Ingo Hartig , Andre Mercanzini , Alain Jordan , Alexandre Michalis , Marc Boers , Alain Dransart
CPC分类号： A61N1/3606 , A61B5/00 , A61B5/04001 , A61B5/0478 , A61B5/4836 , A61B5/6868 , A61B6/032 , A61B6/12 , A61B6/50 , A61B6/501 , A61B6/505 , A61N1/0531 , A61N1/0534 , A61N1/0551 , A61N1/36139 , A61N1/36157 , A61N1/36171 , A61N1/36175 , A61N1/36182 , A61N1/36185 , H05K1/118
摘要： Techniques using electrical stimulation for treating an Autoimmune Disease by means of an implantable pulse generator and at least one electrode. An electrode lead is surgically implanted in a region of the insular cortex to deliver electrical stimulation. The at least one electrode lead and implantable pulse generator contain features that allow the electrical stimulation to be directed to specific volumes of the insular cortex, and ensure that non-therapeutic volumes do not receive electrical stimulation.
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公开(公告)号：US09925376B2
公开(公告)日：2018-03-27
申请号：US15422393
申请日：2017-02-01
发明人： Ingo Hartig , Andre Mercanzini , Alain Jordan , Alexandre Michalis , Marc Boers , Alain Dransart
CPC分类号： A61N1/3606 , A61B5/00 , A61B5/04001 , A61B5/0478 , A61B5/4836 , A61B5/6868 , A61B6/032 , A61B6/12 , A61B6/50 , A61B6/501 , A61B6/505 , A61N1/0531 , A61N1/0534 , A61N1/0551 , A61N1/36139 , A61N1/36157 , A61N1/36171 , A61N1/36175 , A61N1/36182 , A61N1/36185 , H05K1/118
摘要： Techniques using electrical stimulation for treating an Autoimmune Disease by means of an implantable pulse generator and at least one electrode. An electrode lead is surgically implanted in a region of the insular cortex to deliver electrical stimulation. The at least one electrode lead and implantable pulse generator contain features that allow the electrical stimulation to be directed to specific volumes of the insular cortex, and ensure that non-therapeutic volumes do not receive electrical stimulation.
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公开(公告)号：US20170028191A1
公开(公告)日：2017-02-02
申请号：US15281468
申请日：2016-09-30
CPC分类号： A61N1/0534 , A61B5/04 , A61B5/04001 , A61B5/6868 , A61B6/12 , A61N1/0551 , H05K1/118
摘要： The present disclosure discusses a system and methods for a deep brain stimulation lead. More particularly, the disclosure discusses a stimulation lead that includes one or more silicon based barrier layers within a MEMS film. The silicon based barrier layers can improve device reliability and durability. The silicon based barrier layers can also improve adhesion between the layers of the MEMS film.
摘要翻译： 本公开讨论了用于深部脑刺激引导的系统和方法。 更具体地，本公开讨论了包括MEMS膜内的一个或多个基于硅的阻挡层的刺激引线。 硅基阻挡层可以提高器件的可靠性和耐久性。 硅基阻挡层还可以改善MEMS膜的层之间的粘附。
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公开(公告)号：US20160059004A1
公开(公告)日：2016-03-03
申请号：US14470423
申请日：2014-08-27
IPC分类号： A61N1/05
CPC分类号： A61N1/0534 , A61B5/04 , A61B5/04001 , A61B5/6868 , A61B6/12 , A61N1/0551 , H05K1/118
摘要： The present disclosure discusses a system and methods for a deep brain stimulation lead. More particularly, the disclosure discusses a stimulation lead that includes one or more silicon based barrier layers within a MEMS film. The silicon based barrier layers can improve device reliability and durability. The silicon based barrier layers can also improve adhesion between the layers of the MEMS film.
摘要翻译： 本公开讨论了用于深部脑刺激引导的系统和方法。 更具体地，本公开讨论了包括MEMS膜内的一个或多个基于硅的阻挡层的刺激引线。 硅基阻挡层可以提高器件的可靠性和耐久性。 硅基阻挡层还可以改善MEMS膜的层之间的粘附。
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