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公开(公告)号：US10004895B2
公开(公告)日：2018-06-26
申请号：US15281468
申请日：2016-09-30
摘要： The present disclosure discusses a system and methods for a deep brain stimulation lead. More particularly, the disclosure discusses a stimulation lead that includes one or more silicon based barrier layers within a MEMS film. The silicon based barrier layers can improve device reliability and durability. The silicon based barrier layers can also improve adhesion between the layers of the MEMS film.
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公开(公告)号：US20220032043A1
公开(公告)日：2022-02-03
申请号：US17500704
申请日：2021-10-13
摘要： The present disclosure discusses a system and methods for a deep brain stimulation lead. More particularly, the disclosure discusses a stimulation lead that includes one or more silicon based barrier layers within a MEMS film. The silicon based barrier layers can improve device reliability and durability. The silicon based barrier layers can also improve adhesion between the layers of the MEMS film.
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公开(公告)号：US10441779B2
公开(公告)日：2019-10-15
申请号：US16015625
申请日：2018-06-22
摘要： The present disclosure discusses a system and methods for a deep brain stimulation lead. More particularly, the disclosure discusses a stimulation lead that includes one or more silicon based barrier layers within a MEMS film. The silicon based barrier layers can improve device reliability and durability. The silicon based barrier layers can also improve adhesion between the layers of the MEMS film.
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公开(公告)号：US20200009372A1
公开(公告)日：2020-01-09
申请号：US16551390
申请日：2019-08-26
摘要： The present disclosure discusses a system and methods for a deep brain stimulation lead. More particularly, the disclosure discusses a stimulation lead that includes one or more silicon based barrier layers within a MEMS film. The silicon based barrier layers can improve device reliability and durability. The silicon based barrier layers can also improve adhesion between the layers of the MEMS film.
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公开(公告)号：US10201707B2
公开(公告)日：2019-02-12
申请号：US15878066
申请日：2018-01-23
发明人： Ingo Hartig , Andre Mercanzini , Alain Jordan , Alexandre Michalis , Marc Boers , Alain Dransart
IPC分类号： A61B6/12 , A61B1/05 , A61N1/36 , A61B5/00 , A61N1/05 , A61B5/04 , A61B5/0478 , H05K1/11 , A61B6/03 , A61B6/00
摘要： Techniques using electrical stimulation for treating an Autoimmune Disease by means of an implantable pulse generator and at least one electrode. An electrode lead is surgically implanted in a region of the insular cortex to deliver electrical stimulation. The at least one electrode lead and implantable pulse generator contain features that allow the electrical stimulation to be directed to specific volumes of the insular cortex, and ensure that non-therapeutic volumes do not receive electrical stimulation.
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公开(公告)号：US20180296825A1
公开(公告)日：2018-10-18
申请号：US16015625
申请日：2018-06-22
摘要： The present disclosure discusses a system and methods for a deep brain stimulation lead. More particularly, the disclosure discusses a stimulation lead that includes one or more silicon based barrier layers within a MEMS film. The silicon based barrier layers can improve device reliability and durability. The silicon based barrier layers can also improve adhesion between the layers of the MEMS film.
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公开(公告)号：US11167126B2
公开(公告)日：2021-11-09
申请号：US16551390
申请日：2019-08-26
摘要： The present disclosure discusses a system and methods for a deep brain stimulation lead. More particularly, the disclosure discusses a stimulation lead that includes one or more silicon based barrier layers within a MEMS film. The silicon based barrier layers can improve device reliability and durability. The silicon based barrier layers can also improve adhesion between the layers of the MEMS film.
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公开(公告)号：US20170136238A1
公开(公告)日：2017-05-18
申请号：US15422393
申请日：2017-02-01
发明人： Ingo Hartig , Andre Mercanzini , Alain Jordan , Alexandre Michalis , Marc Boers , Alain Dransart
CPC分类号： A61N1/3606 , A61B5/00 , A61B5/04001 , A61B5/0478 , A61B5/4836 , A61B5/6868 , A61B6/032 , A61B6/12 , A61B6/50 , A61B6/501 , A61B6/505 , A61N1/0531 , A61N1/0534 , A61N1/0551 , A61N1/36139 , A61N1/36157 , A61N1/36171 , A61N1/36175 , A61N1/36182 , A61N1/36185 , H05K1/118
摘要： Techniques using electrical stimulation for treating an Autoimmune Disease by means of an implantable pulse generator and at least one electrode. An electrode lead is surgically implanted in a region of the insular cortex to deliver electrical stimulation. The at least one electrode lead and implantable pulse generator contain features that allow the electrical stimulation to be directed to specific volumes of the insular cortex, and ensure that non-therapeutic volumes do not receive electrical stimulation.
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公开(公告)号：US09474894B2
公开(公告)日：2016-10-25
申请号：US14470423
申请日：2014-08-27
CPC分类号： A61N1/0534 , A61B5/04 , A61B5/04001 , A61B5/6868 , A61B6/12 , A61N1/0551 , H05K1/118
摘要： The present disclosure discusses a system and methods for a deep brain stimulation lead. More particularly, the disclosure discusses a stimulation lead that includes one or more silicon based barrier layers within a MEMS film. The silicon based barrier layers can improve device reliability and durability. The silicon based barrier layers can also improve adhesion between the layers of the MEMS film.
摘要翻译： 本公开讨论了用于深部脑刺激引导的系统和方法。 更具体地，本公开讨论了包括MEMS膜内的一个或多个基于硅的阻挡层的刺激引线。 硅基阻挡层可以提高器件的可靠性和耐久性。 硅基阻挡层还可以改善MEMS膜的层之间的粘附。
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公开(公告)号：US11730953B2
公开(公告)日：2023-08-22
申请号：US17500704
申请日：2021-10-13
CPC分类号： A61N1/0534 , A61B5/24 , A61N1/0551 , A61B5/6868 , A61B6/12 , H05K1/118
摘要： The present disclosure discusses a system and methods for a deep brain stimulation lead. More particularly, the disclosure discusses a stimulation lead that includes one or more silicon based barrier layers within a MEMS film. The silicon based barrier layers can improve device reliability and durability. The silicon based barrier layers can also improve adhesion between the layers of the MEMS film.
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