公开(公告)号：US20200291522A1

公开(公告)日：2020-09-17

申请号：US16802284

申请日：2020-02-26

Applicant: Applied Materials, Inc.

Inventor： Hanish Kumar PANAVALAPPIL KUMARANKUTTY ,  Prashant A. DESAI ,  Diwakar N. KEDLAYA ,  Sumit AGARWAL ,  Vidyadharan Srinivasa Murthy BANGALORE ,  Truong NGUYEN ,  Zubin HUANG

IPC: C23C16/455

Abstract: The present disclosure relates to a lid assembly apparatus and related methods for substrate processing chambers. In one implementation, a lid assembly includes a gas manifold. The gas manifold includes a first gas channel configured to receive a process gas, a second gas channel configured to receive a doping gas, and a third gas channel configured to receive a cleaning gas. The lid assembly also includes a showerhead. The showerhead includes one or more first gas openings that are configured to receive the process gas, and one or more second gas openings that are configured to receive the doping gas.

公开(公告)号：US20190137415A1

公开(公告)日：2019-05-09

申请号：US16126753

申请日：2018-09-10

Applicant: Applied Materials, Inc.

Inventor： Ramesh GOPALAN ,  Simon YAVELBERG ,  Zubin HUANG

IPC: G01N22/00 ,  H01L21/67 ,  H01J37/32

Abstract: The implementations described herein generally relate to a sensing device for use in the semiconducting industry, which sense process parameters to control semiconductor processes. More specifically, the implementations relate to packaging for a surface acoustic wave (SAW) based devices or wireless or RF-responsive sensors for use in the harsh processing environments of a semiconductor processing chamber such that the neither the sensor and its components nor the chamber components interfere with or contaminate one another. The sensor packaging may include various packaging layers with or without protective coatings and a waveguide. The packaging may have a thickness chosen such that the thickness is less than the electromagnetic wavelength of a SAW sensor radio wave. The sensing devices may be disposed in cavities of the chamber, the processing volume, on chamber components, and/or on the substrate.

公开(公告)号：US20240229230A1

公开(公告)日：2024-07-11

申请号：US18614912

申请日：2024-03-25

Applicant: Applied Materials, Inc.

Inventor： Zubin HUANG ,  Mohammed Jaheer SHERFUDEEN ,  David Matthew SANTI ,  Jallepally RAVI ,  Peiqi WANG ,  Kai WU

IPC: C23C16/08 ,  C23C16/455 ,  C23C16/458

CPC classification number: C23C16/08 ,  C23C16/45523 ,  C23C16/458

Abstract: A method of forming a tungsten-containing layer over a substrate includes a) positioning a substrate on a substrate support in a process volume of a process chamber; b) providing a precursor gas to the process volume of the process chamber for a first duration; and c) providing a tungsten-containing gas to the process volume of the process chamber by opening a pulsing valve on a tungsten-containing gas delivery line for a second duration occurring after the first duration to form a tungsten-containing layer on the substrate. The tungsten-containing gas delivery line includes a first section connected to an inlet of the pulsing valve and a second section connected to an outlet of the pulsing valve, the first section connects the inlet of the pulsing valve to a reservoir of tungsten-containing gas, the second section connects the outlet of the pulsing valve to an inlet of the process chamber.

公开(公告)号：US20230357929A1

公开(公告)日：2023-11-09

申请号：US17862138

申请日：2022-07-11

Applicant: Applied Materials, Inc.

Inventor： Zubin HUANG ,  Jallepally RAVI ,  Cheng CHENG ,  Peiqi WANG ,  Kai WU

IPC: C23C16/458 ,  H01L21/687 ,  C23C16/46 ,  C23C16/455

CPC classification number: C23C16/4585 ,  H01L21/68721 ,  C23C16/46 ,  C23C16/45565

Abstract: A shadow ring for a processing chamber, such as a semiconductor processing chamber, is an annular member including a body with a radially inwardly projecting lip. The shadow ring includes a feature that mitigates heat transfer between the lip and the rest of the body. In one example, the feature includes a plurality of apertures, each aperture extending from an upper opening at an upper surface of the shadow ring to a corresponding lower opening at a lower surface of the shadow ring. A neck between adjacent apertures creates a bottleneck that hinders conductive heat transfer.

公开(公告)号：US20230340662A1

公开(公告)日：2023-10-26

申请号：US17729943

申请日：2022-04-26

Applicant: Applied Materials, Inc.

Inventor： Zubin HUANG ,  Mohammed Jaheer SHERFUDEEN ,  David Matthew SANTI ,  Jallepally Ravi ,  Peiqi WANG ,  Kai WU

IPC: C23C16/08 ,  C23C16/455 ,  C23C16/458

CPC classification number: C23C16/08 ,  C23C16/45523 ,  C23C16/458

Abstract: A method of forming a tungsten-containing layer over a substrate includes a) positioning a substrate on a substrate support in a process volume of a process chamber; b) providing a precursor gas to the process volume of the process chamber for a first duration; and c) providing a tungsten-containing gas to the process volume of the process chamber by opening a pulsing valve on a tungsten-containing gas delivery line for a second duration occurring after the first duration to form a tungsten-containing layer on the substrate. The tungsten-containing gas delivery line includes a first section connected to an inlet of the pulsing valve and a second section connected to an outlet of the pulsing valve, the first section connects the inlet of the pulsing valve to a reservoir of tungsten-containing gas, the second section connects the outlet of the pulsing valve to an inlet of the process chamber.

公开(公告)号：US20200321210A1

公开(公告)日：2020-10-08

申请号：US16797111

申请日：2020-02-21

Applicant: Applied Materials, Inc.

Inventor： Meenakshi GUPTA ,  Rui CHENG ,  Srinivas GUGGILLA ,  Karthik JANAKIRAMAN ,  Diwakar N. KEDLAYA ,  Zubin HUANG

IPC: H01L21/027 ,  H01L21/32 ,  H01L21/02

Abstract: Embodiments for processing a substrate are provided and include a method of trimming photoresist to provide photoresist profiles with smooth sidewall surfaces and to tune critical dimensions (CD) for the patterned features and/or a subsequently deposited dielectric layer. The method can include depositing a sacrificial structure layer on the substrate, depositing a photoresist on the sacrificial structure layer, and patterning the photoresist to produce a crude photoresist profile on the sacrificial structure layer. The method also includes trimming the photoresist with a plasma to produce a refined photoresist profile covering a first portion of the sacrificial structure layer while a second portion of the sacrificial structure layer is exposed, etching the second portion of the sacrificial structure layer to form patterned features disposed on the substrate, and depositing a dielectric layer on the patterned features.

公开(公告)号：US20170176349A1

公开(公告)日：2017-06-22

申请号：US15000092

申请日：2016-01-19

Applicant: Applied Materials, Inc.

Inventor： Ramesh GOPALAN ,  Simon YAVELBERG ,  Zubin HUANG

IPC: G01N22/00 ,  H01L21/67

CPC classification number: G01N22/00 ,  H01J37/32935 ,  H01L21/67253

Abstract: The implementations described herein generally relate to a sensing device for use in the semiconducting industry which sense process parameters to control semiconductor processes. More specifically, the implementations relate to packaging for a surface acoustic wave (SAW) based devices or wireless or RF-responsive sensors for use in the harsh processing environments of a semiconductor processing chamber such that the neither the sensor and its components nor the chamber components interfere with or contaminate one another. The sensor packaging may include various packaging layers with or without protective coatings and a waveguide. The packaging may have a thickness chosen such that the thickness is less than the electromagnetic wavelength of a SAW sensor radio wave. The sensing devices may be disposed in cavities of the chamber, the processing volume, on chamber components, and/or on the substrate.

公开(公告)号：US20230130756A1

公开(公告)日：2023-04-27

申请号：US17508581

申请日：2021-10-22

Applicant: Applied Materials, Inc.

Inventor： Zubin HUANG ,  Srinivas Tokur MOHANA ,  Sandesh YADAMANE ,  Kai WU ,  Jallepally RAVI ,  Xiaozhou YU ,  Peiqi WANG

IPC: H01L21/67 ,  C23C16/458 ,  C23C16/46 ,  H01L21/687

Abstract: Embodiments of the disclosure provided herein generally relate to a bottom cover plate (BCP) that enables control of radiation loss from a heating element inside a chamber for processing a substrate. The heating element is used to heat the substrate before or during processing and may heat the substrate unevenly due to uneven heat losses within the chamber. For example, the uneven heating of the substrate may result in uneven deposition of a material on the substrate, which may result in excess processing to correct the deposition or wasted product from disposing of improperly processed substrates. The BCP may be used to correct the uneven heating of the substrate.

公开(公告)号：US20230023764A1

公开(公告)日：2023-01-26

申请号：US17786520

申请日：2020-12-15

Applicant: APPLIED MATERIALS, INC.

Inventor： David W. GROECHEL ,  Michael R. RICE ,  Gang Grant PENG ,  Rui CHENG ,  Zubin HUANG ,  Han WANG ,  Karthik JANAKIRAMAN ,  Diwakar KEDLAYA ,  Paul L. BRILLHART ,  Abdul Aziz KHAJA

IPC: H01L21/285 ,  H01L21/67

Abstract: Methods and apparatus for surface profiling and texturing of chamber components for use in a process chamber, such surface-profiled or textured chamber components, and method of use of same are provided herein. In some embodiments, a method includes measuring a parameter of a reference substrate or a heated pedestal using one or more sensors and modifying a surface of a chamber component physically based on the measured parameter.

公开(公告)号：US20210147981A1

公开(公告)日：2021-05-20

申请号：US16636659

申请日：2018-08-10

Applicant: Applied Materials, Inc.

Inventor： Rui CHENG ,  Karthik JANAKIRAMAN ,  Zubin HUANG

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/46

Abstract: In one aspect, an apparatus includes a chamber body, a blocker plate for delivering process gases into a gas mixing volume, and a face plate having holes through which the mixed gas is distributed to a substrate. In another aspect, the face plate may include a first region with a recess relative to a second region. In another aspect, the blocker plate may include a plurality of regions, each region having different hole patterns/geometries and/or flow profiles. In another aspect, the apparatus may include a radiation shield disposed below a bottom of the substrate support. A shaft or stem of the substrate support includes holes at an upper end thereof near the substrate support.