Method for manufacturing metal nano particles having hollow structure
    13.
    发明授权
    Method for manufacturing metal nano particles having hollow structure 有权
    具有中空结构的金属纳米颗粒的制造方法

    公开(公告)号:US08460427B2

    公开(公告)日:2013-06-11

    申请号:US11873982

    申请日:2007-10-17

    IPC分类号: B22F9/16 B22F9/18 B22F9/24

    摘要: A method for manufacturing metal nano particles having a hollow structure is provided. First, a suitable reducing agent is added into a first metal salt solution, and first metal ions are reduced to form first metal nano particles. Next, after the reducing agent is decomposed, a second metal salt solution with a higher reduction potential than that of the first metal is added. Then, the first metal particles are oxidized to form first metal ions when the second metal ions are reduced on the surface of the first metal by electrochemical oxidation reduction reaction, and thus, second metal nano particles having a hollow structure and a larger surface area are obtained. The method is simple and the metal nano particles with uniform particle size are obtained by this method.

    摘要翻译: 提供了一种制造具有中空结构的金属纳米颗粒的方法。 首先,将合适的还原剂加入到第一金属盐溶液中,并且将第一金属离子还原形成第一金属纳米颗粒。 接着,在还原剂分解后,添加比第一金属还原电位高的第二金属盐溶液。 然后,当通过电化学氧化还原反应在第一金属的表面上还原第二金属离子时,第一金属颗粒被氧化以形成第一金属离子,因此具有中空结构和较大表面积的第二金属纳米颗粒是 获得。 该方法简单,通过该方法可以获得粒径均匀的金属纳米颗粒。

    TCNQ complex and its application in solid electrolytic capacitors
    15.
    发明授权
    TCNQ complex and its application in solid electrolytic capacitors 有权
    TCNQ复合材料及其在固体电解电容器中的应用

    公开(公告)号:US06522526B2

    公开(公告)日:2003-02-18

    申请号:US10002197

    申请日:2001-12-05

    IPC分类号: H01G900

    摘要: The present invention discloses TCNQ complex, shown as the following formula: wherein X represents identical or different double electron donors, TCNQ represents tetracyanoquinodimethane. The TCNQ complex is prepared by synthesizing TCNQ with double electron donors as the major composition. Different ratios between compositions can be adjusted based on the distinct properties of various electron donors to conform to different needs of manufacturing process. The TCNQ complex of the present invention is resistant to high voltage and high temperature. Its melting point is higher than the soldering temperature. In addition, the TCNQ complex has better conductivity that remains even after the heating/cooling cycle.

    摘要翻译: 本发明公开了如下式所示的TCNQ络合物:其中X表示相同或不同的双电子给体,TCNQ表示四氰基醌二甲烷。 TCNQ复合物是通过以双电子给体为主要成分合成TCNQ制备的。 可以基于各种电子给体的不同性质来调整组合物之间的不同比例,以符合制造过程的不同需要。 本发明的TCNQ复合物耐高压高温。 其熔点高于焊接温度。 此外,TCNQ复合物在加热/制冷循环后仍具有更好的导电性。