公开(公告)号：US08293000B2

公开(公告)日：2012-10-23

申请号：US12309188

申请日：2007-07-06

Applicant: Joon-Koo Kang ,  Mi-Young Han ,  Young-Eun Lee ,  Young-Jun Hong ,  Yeong-Rae Chang

Inventor： Joon-Koo Kang ,  Mi-Young Han ,  Young-Eun Lee ,  Young-Jun Hong ,  Yeong-Rae Chang

IPC: C09D5/32 ,  C09D183/00 ,  B05D3/02

CPC classification number: G02B1/111 ,  C08G77/24 ,  C08L83/08 ,  C09D183/08

Abstract: An antireflective coating composition includes a hydrolytic condensate (C1) of alkoxy silane (C11) and fluoric alkoxy silane (C12); a particle-type metal fluoride (C2) with a refractive index of 1.40 or less; and a liquid dispersion-enhancing chelating agent (C3). A coating film to which the above composition is applied controls refractive index, surface energy, film strength and so on, so it ensures excellent antireflective characteristic, excellent scratch resistance, good erasure of liquid stains such as fingerprints, and particularly excellent dust removal, so it may be usefully applied to an outermost layer of a front surface of a display regardless of kind of a display substrate or presence of an additional coating layer.

Abstract translation: 抗反射涂料组合物包括烷氧基硅烷（C11）和氟烷氧基硅烷（C12）的水解缩合物（C1）; 折射率为1.40以下的粒子型金属氟化物（C2） 和液体分散增强螯合剂（C3）。 上述组合物所用的涂膜控制折射率，表面能，膜强度等，从而确保优异的抗反射特性，优异的耐擦伤性，良好的擦痕等痕迹，特别优异的除尘等。 无论显示基板的种类或附加涂层的存在如何，可以有效地将其应用于显示器的前表面的最外层。

公开(公告)号：US20110300704A1

公开(公告)日：2011-12-08

申请号：US13205461

申请日：2011-08-08

Applicant: Yong-Hoon Son ,  Yu-Gyun Shin ,  Jong-Wook Lee ,  Sun-Ghil Lee ,  In-Soo Jung ,  Young-Eun Lee ,  Deok-Hyung Lee

Inventor： Yong-Hoon Son ,  Yu-Gyun Shin ,  Jong-Wook Lee ,  Sun-Ghil Lee ,  In-Soo Jung ,  Young-Eun Lee ,  Deok-Hyung Lee

IPC: H01L21/283

CPC classification number: H01L29/7842 ,  H01L21/823425 ,  H01L21/823475 ,  H01L27/0688

Abstract: A semiconductor device includes an inorganic insulating layer on a semiconductor substrate, a contact plug that extends through the inorganic insulating layer to contact the semiconductor substrate and a stress buffer spacer disposed between the node contact plug and the inorganic insulating layer. The device further includes a thin-film transistor (TFT) disposed on the inorganic insulating layer and having a source/drain region extending along the inorganic insulating layer to contact the contact plug. The device may further include an etch stop layer interposed between the inorganic insulating layer and the semiconductor substrate.

Abstract translation: 半导体器件包括半导体衬底上的无机绝缘层，延伸穿过无机绝缘层以接触半导体衬底的接触插塞和设置在节点接触插塞和无机绝缘层之间的应力缓冲间隔件。 该器件还包括设置在无机绝缘层上并具有沿着无机绝缘层延伸以接触接触插塞的源极/漏极区域的薄膜晶体管（TFT）。 该器件还可以包括插入无机绝缘层和半导体衬底之间的蚀刻停止层。

公开(公告)号：US20100159689A1

公开(公告)日：2010-06-24

申请号：US12715599

申请日：2010-03-02

Applicant: Yong-Hoon Son ,  Yu-Gyun Shin ,  Jong-Wook Lee ,  Sun-Ghil Lee ,  In-Soo Jung ,  Young-Eun Lee ,  Deok-Hyung Lee

Inventor： Yong-Hoon Son ,  Yu-Gyun Shin ,  Jong-Wook Lee ,  Sun-Ghil Lee ,  In-Soo Jung ,  Young-Eun Lee ,  Deok-Hyung Lee

IPC: H01L21/768

CPC classification number: H01L29/7842 ,  H01L21/823425 ,  H01L21/823475 ,  H01L27/0688

Abstract: A semiconductor device includes an inorganic insulating layer on a semiconductor substrate, a contact plug that extends through the inorganic insulating layer to contact the semiconductor substrate and a stress buffer spacer disposed between the node contact plug and the inorganic insulating layer. The device further includes a thin-film transistor (TFT) disposed on the inorganic insulating layer and having a source/drain region extending along the inorganic insulating layer to contact the contact plug. The device may further include an etch stop layer interposed between the inorganic insulating layer and the semiconductor substrate.

Abstract translation: 半导体器件包括半导体衬底上的无机绝缘层，延伸穿过无机绝缘层以接触半导体衬底的接触插塞和设置在节点接触插塞和无机绝缘层之间的应力缓冲间隔件。 该器件还包括设置在无机绝缘层上并具有沿着无机绝缘层延伸以接触接触插塞的源极/漏极区域的薄膜晶体管（TFT）。 该器件还可以包括插入无机绝缘层和半导体衬底之间的蚀刻停止层。

公开(公告)号：US07557388B2

公开(公告)日：2009-07-07

申请号：US11398118

申请日：2006-04-05

Applicant: Sun-Ghil Lee ,  Young-Pil Kim ,  Yu-Gyun Shin ,  Jong-Wook Lee ,  Young-Eun Lee

Inventor： Sun-Ghil Lee ,  Young-Pil Kim ,  Yu-Gyun Shin ,  Jong-Wook Lee ,  Young-Eun Lee

IPC: H01L31/00 ,  H01L35/26 ,  H01L31/117

CPC classification number: C30B29/06 ,  C30B15/00

Abstract: A semiconductor device formed on a strained silicon layer and a method of manufacturing such a semiconductor device are disclosed. In accordance with this invention, a first silicon germanium layer is formed on a single crystalline silicon substrate; a second silicon germanium layer is formed on the first silicon germanium layer, the second silicon germanium layer having a concentration of germanium in a range of about 1 percent by weight to about 15 percent by weight based on the total weight of the second silicon germanium layer; a strained silicon layer is formed on the second silicon germanium layer; an isolation layer is formed at a first portion of the strained silicon layer; a gate structure is formed on the strained silicon layer; and, source/drain regions are formed at second portions of the strained silicon layer adjacent to the gate structure to form a transistor.

Abstract translation: 公开了一种形成在应变硅层上的半导体器件及其制造方法。 根据本发明，在单晶硅衬底上形成第一硅锗层; 第二硅锗层形成在第一硅锗层上，第二硅锗层的锗浓度在约1重量％至约15重量％的范围内，基于第二硅锗层的总重量 ; 在第二硅锗层上形成应变硅层; 在应变硅层的第一部分处形成隔离层; 在应变硅层上形成栅极结构; 并且源极/漏极区域形成在与栅极结构相邻的应变硅层的第二部分处以形成晶体管。

公开(公告)号：US07524210B2

公开(公告)日：2009-04-28

申请号：US12005624

申请日：2007-12-28

Applicant: Young-Eun Lee ,  Seung-Hyun Lee

Inventor： Young-Eun Lee ,  Seung-Hyun Lee

IPC: H01R13/66

CPC classification number: G02F1/133604 ,  G02F2001/133612

Abstract: A capacitive connector for a backlight unit having a light source including: a first conductive layer covering an end portion of the light source; an insulation layer covering an external surface of the first conductive layer; and a second conductive layer separated from the first conductive layer with the insulation layer interposed therebetween.

Abstract translation: 一种用于具有光源的背光单元的电容连接器，包括：覆盖所述光源的端部的第一导电层; 覆盖所述第一导电层的外表面的绝缘层; 以及与所述第一导电层分离的第二导电层，其间具有绝缘层。

公开(公告)号：US20080308845A1

公开(公告)日：2008-12-18

申请号：US12195790

申请日：2008-08-21

Applicant: Sung-Min Kim ,  Kyoung-Hwan Yeo ,  In-Soo Jung ,  Si-Young Choi ,  Dong-Won Kim ,  Yong-Hoon Son ,  Young-Eun Lee ,  Byeong-Chan Lee ,  Jong-Wook Lee

Inventor： Sung-Min Kim ,  Kyoung-Hwan Yeo ,  In-Soo Jung ,  Si-Young Choi ,  Dong-Won Kim ,  Yong-Hoon Son ,  Young-Eun Lee ,  Byeong-Chan Lee ,  Jong-Wook Lee

IPC: H01L29/00

CPC classification number: H01L29/0653 ,  H01L29/78

Abstract: Embodiments of the present invention include heterogeneous substrates, integrated circuits formed on such heterogeneous substrates. The heterogeneous substrates according to certain embodiments of the present invention include a first Group IV semiconductor layer (e.g., silicon), a second Group IV pattern (e.g., a silicon-germanium pattern) that includes a plurality of individual elements on the first Group IV semiconductor layer, and a third Group IV semiconductor layer (e.g., a silicon epitaxial layer) on the second Group IV pattern and on a plurality of exposed portions of the first Group IV semiconductor layer. The second Group IV pattern may be removed in embodiments of the present invention. In these and other embodiments of the present invention, the third Group IV semiconductor layer may be planarized.

Abstract translation: 本发明的实施例包括异质衬底，在这种异质衬底上形成的集成电路。 根据本发明的某些实施方案的异质衬底包括第一组IV半导体层（例如，硅），第二组IV图案（例如硅 - 锗图案），其包括第一组IV上的多个单独元件 半导体层和第二组IV模式上的第三组IV半导体层（例如，硅外延层）和第一组IV半导体层的多个暴露部分上。 在本发明的实施例中可以去除第二组IV图案。 在本发明的这些和其它实施例中，第三组IV半导体层可以被平坦化。

公开(公告)号：US20080231775A1

公开(公告)日：2008-09-25

申请号：US12005628

申请日：2007-12-28

Applicant: Young-Eun Lee

Inventor： Young-Eun Lee

IPC: G02F1/1333 ,  G02F1/13357

CPC classification number: G02F1/133604 ,  G02F1/133603

Abstract: A liquid crystal display device capable of reducing a time delay in lighting of the liquid crystal display device includes a liquid crystal panel, at least one fluorescent lamps disposed below the liquid crystal panel, formed as a cylindrical shape having a central axis and supplying light to the liquid crystal panel, and at least one auxiliary optical source disposed to face the liquid crystal panel while having the central axis therebetween and supplying light to the fluorescent lamps.

Abstract translation: 能够减少液晶显示装置的点亮时间延迟的液晶显示装置包括液晶面板，设置在液晶面板的下方的至少一个荧光灯，形成为具有中心轴的圆筒状，并向 液晶面板，以及至少一个辅助光源，其设置成面对液晶面板同时具有中心轴并向荧光灯提供光。

公开(公告)号：US08268036B2

公开(公告)日：2012-09-18

申请号：US12937533

申请日：2008-11-19

Applicant: Dong-Shik Min ,  Chan-Soo Park ,  Young-Eun Lee ,  Hai-Chang Cho ,  Kwang-Jung Lee ,  Sung-Hwan Hong

Inventor： Dong-Shik Min ,  Chan-Soo Park ,  Young-Eun Lee ,  Hai-Chang Cho ,  Kwang-Jung Lee ,  Sung-Hwan Hong

IPC: C22B7/04 ,  C22C38/04

CPC classification number: C22B9/106 ,  C21C5/5264 ,  C21C5/54 ,  C21C7/0645 ,  C21C7/068 ,  C21C7/076 ,  C22B7/04 ,  C22B47/0036 ,  C22C22/00 ,  Y02P10/216 ,  Y02P10/242

Abstract: Disclosed is a method of producing ultra low phosphorus and carbon ferromanganese having 0.1 wt % or less carbon and 0.03 wt % or less phosphorus. The method includes preparing low carbon silicomanganese having low phosphorus content, preparing molten manganese slag, subjecting the molten manganese slag and the low carbon silicomanganese having low phosphorus content to primary mixing and stirring at a ratio of 70˜72:28˜30 in a ladle, thus producing a metal melt and slag, and subjecting the metal melt separated from the above slag and the molten manganese slag identical to that used in the primary mixing and stirring to secondary mixing and stirring, thus producing slag and a metal melt including 91˜93 wt % manganese, 0.60˜0.85 wt % silicon, 0.05˜0.10 wt % carbon and 0.015˜0.02 wt % phosphorus.

Abstract translation: 公开了一种生产具有0.1重量％或更少的碳和0.03重量％或更少的磷的超低磷和碳锰铁的方法。 该方法包括制备低磷含量的低碳硅锰矿，制备熔融锰渣，使熔融锰渣和低磷含量的低碳硅锰矿以70〜72：28〜30的比例进行一次混合搅拌 ，从而产生金属熔体和炉渣，并将从上述炉渣分离的金属熔体和与初次混合搅拌相同的熔融锰渣进行二次混合和搅拌，从而产生炉渣和金属熔体，其包括91〜 93重量％的锰，0.60〜0.85重量％的硅，0.05〜0.10重量％的碳和0.015〜0.02重量％的磷。

公开(公告)号：US07880715B2

公开(公告)日：2011-02-01

申请号：US11708937

申请日：2007-02-20

Applicant: Eui-dong Hwang ,  Young-eun Lee ,  Young-sup Kwon ,  Dal-jung Kwon

Inventor： Eui-dong Hwang ,  Young-eun Lee ,  Young-sup Kwon ,  Dal-jung Kwon

IPC: G09G3/36 ,  G02F1/1335

CPC classification number: H05K3/222 ,  H05K1/141 ,  H05K3/366 ,  H05K2201/10113

Abstract: A display device and an inverter therefor are disclosed. The inverter has a main circuit board having a plurality of first circuit patterns and a plurality of second circuit patterns formed on a first side thereof, and a sub circuit board having first connecting patterns corresponding to the plurality of first circuit patterns formed on one side of the sub circuit board and second connecting patterns corresponding to the plurality of second circuit patterns formed on a second side thereof. The plurality of first circuit patterns are coupled with each other through the first connecting patterns, and the plurality of second circuit patterns are coupled with each other through the second connecting patterns. Thus, the present invention provides an inverter and a display device having the same, which are capable of being manufactured at a low production cost.

Abstract translation: 公开了一种显示装置及其逆变器。 逆变器具有主电路板，其具有多个第一电路图案和形成在其第一侧上的多个第二电路图案，以及副电路板，其具有与形成在第一电路图的一侧上的多个第一电路图案对应的第一连接图案 子电路板和与形成在其第二侧上的多个第二电路图案对应的第二连接图案。 多个第一电路图案通过第一连接图案彼此耦合，并且多个第二电路图案通过第二连接图案彼此耦合。 因此，本发明提供一种能够以低生产成本制造的逆变器和具有该逆变器及其显示装置。

公开(公告)号：US20100076109A1

公开(公告)日：2010-03-25

申请号：US12309181

申请日：2007-07-06

Applicant: Joon-Koo Kang ,  Mi-Young Han ,  Young-Eun Lee ,  Young-Jun Hong ,  Yeong-Rae Chang

Inventor： Joon-Koo Kang ,  Mi-Young Han ,  Young-Eun Lee ,  Young-Jun Hong ,  Yeong-Rae Chang

IPC: C08F2/48

CPC classification number: C09D133/08 ,  C09D4/00 ,  C09D133/16

Abstract: An antireflective coating composition includes a photopolymerizable acrylate monomer (C1); a particle-type metal fluoride (C2) with a refractive index of 1.40 or less; a photopolymerization initiator (C3); and at least one liquid dispersion-enhancing chelating agent (C4) selected from the group consisting of Mg(CF3COO)2, Na(CF3COO), K(CF3COO), Ca(CF3COO)2, Mg(CF2COCHCOCF3)2 and Na(CF2COCHCOCF3). This composition ensures good mechanical strength, excellent adhesion to a substrate, short curing time by UV curing, prevention of dust attachment, good erasure of stain, good dust removal and good scratch resistance, so it is usefully for making an antireflective coating film of a display.

Abstract translation: 抗反射涂料组合物包括可光聚合的丙烯酸酯单体（C1）; 折射率为1.40以下的粒子型金属氟化物（C2） 光聚合引发剂（C3）; 以及选自Mg（CF 3 COO）2，Na（CF 3 COO），K（CF 3 COO），Ca（CF 3 COO）2，Mg（CF 2 COCHCOCF 3）2和Na（CF 2 COCHCOCF 3））中的至少一种液体分散增强螯合剂（C4） ）。 该组合物确保良好的机械强度，对基材的优异粘附性，通过UV固化的短固化时间，防尘附着，良好的污渍清除，良好的除尘性和良好的耐划伤性，因此有助于制备抗反射涂膜 显示。