Abstract:
An exemplary method of making an FPC includes forming a substrate comprising metal foil layers interleaved with intervening layers by: (a) laminating intervening layers with metal foil layers; (b) adhering a covering film to outermost surfaces of the substrate; (c) defining a hole in one side of the substrate through the covering film and at least two metal foil layers and the intervening layer between the at least two metal foil layers by etching or laser technology; and (d) plating a portion of an inner wall of the hole with conductive material to form a via to electrically connect the at least two metal foil layers.
Abstract:
A camera module includes a lens module, an image sensor, and a circuit board. The image sensor module is disposed in an image side of the lens module. The circuit board is electronically connected with the image sensor module. The circuit board includes a receiving chamber defined therein. The receiving chamber receives the image sensor module. The lens module is mounted on the circuit board and covers the receiving chamber. The image sensor module is fixed in the receiving chamber that is defined in the circuit board therein. Therefore, a thickness of the camera module along the axis of the camera module is decreased and a volume of the camera module becomes thinner compare with the conventional camera module.
Abstract:
A method, storage server, and computer readable medium for off-loading star-join operations from a host information processing system to a storage server. At least a first and second set of keys from a first and second dimension table, respectively are received from a host system. Each of the first and second set of keys is associated with at least one fact table. A set of locations associated with a set of foreign key indexes are received from the host system. A set of fact table indexes are traversed. At least a first set of Row Identifiers (“RIDs”) associated with the first set of keys and at least a second set of RIDs associated with the second set of keys are identified. An operation is performed on the first and second sets of RIDs to identify an intersecting set of RIDs. The intersecting set of RIDs are then stored.
Abstract:
A camera module includes a lens module including a holder and configured for imaging, an image sensor module received in the holder of the lens module and configured for capturing images, and a protective film adhered to an outer surface of the lens module. Due to the protective film, the outer and inner screw threads of the barrel and the holder are insulated from the outside. As such, use of the protective film maintains the quality of image produced by the camera module.
Abstract:
An apparatus includes a processing chamber having a plasma containing region, a dielectric plate secured on top of the processing chamber, a power source separated from the plasma containing region by the dielectric plate, and a chuck supported within the processing chamber. The chuck is operable and configured to move with respect to the power source.
Abstract:
A adjustable upper coil or electrode for a reaction chamber apparatus useable in semiconductor processing, is constructed so that its shape may be selectively changed or so at least two portions thereof may be selectively driven at different power and/or frequencies. The adjustable upper coil or electrode, therefore, enables the plasma density distribution in the reaction chamber apparatus to be selectively controlled.
Abstract:
A process for forming a composite insulator spacer on the sides of a MOSFET gate structure, wherein the underlying component of the composite insulator spacer is comprised of a thin silicon oxide layer obtained via chemical vapor deposition procedures using tetraethylorthosilicate (TEOS), as a source, has been developed. To densify the underlying thin silicon oxide layer an anneal procedure usually performed after implantation of ions used for a lightly doped source/drain region, is delayed and performed after deposition of the thin silicon oxide layer. The anneal procedure is then used for both activation of the lightly doped source/drain ions, and densification of the thin silicon oxide layer. The etch rate of the densified silicon oxide layer, in dilute hydrofluoric acid procedures is now reduced allowing the underlying silicon oxide component, of the composite insulator spacer, to survive subsequent wet clean procedures employing dilute hydrofluoric acid.