-
公开(公告)号：US07382672B2
公开(公告)日：2008-06-03
申请号：US11754422
申请日：2007-05-29
IPC分类号： G11C7/02
CPC分类号： G11C7/12 , G11C7/02 , G11C7/062 , G11C11/4091 , G11C11/4094
摘要： A memory circuit includes multiple word lines, multiple pairs of complementary bank bit lines, multiple block select lines, and multiple of block circuits. Each of the block circuits includes a local bit line; a first transistor having a control terminal connected to the local bit line, a first bias terminal connected to a first bank bit line of a given pair of bank bit lines, and a second bias terminal connecting to a first voltage source; a second transistor having a control terminal connected to a corresponding one of the block select lines, a first bias terminal connected to a second bank bit line of the given pair of bank bit lines, and a second bias terminal connected to the local bit line; and a plurality of memory cells connected to the local bit line and to respective word lines in the memory circuit. At least two block circuits are connected to a given pair of bank bit lines, the block circuits being configured such that a load on each bank bit line in the given pair of bank bit lines is substantially matched to one another.
摘要翻译： 存储器电路包括多个字线，多对互补组位线，多个块选择线和多个块电路。 每个块电路包括局部位线; 第一晶体管，其具有连接到本地位线的控制端子，连接到给定的一对组位线的第一组位线的第一偏置端子和连接到第一电压源的第二偏置端子; 第二晶体管，其具有连接到对应的一个块选择线的控制端子，连接到给定的一对组位线的第二组位线的第一偏置端子和连接到局部位线的第二偏置端子; 以及连接到本地位线和存储电路中的相应字线的多个存储单元。 至少两个块电路连接到给定的一组组位线，块电路被配置为使得给定的一组组位线中的每个组位线上的负载基本上彼此匹配。
-
公开(公告)号：US07336553B2
公开(公告)日：2008-02-26
申请号：US11697036
申请日：2007-04-05
申请人： William Robert Reohr
发明人： William Robert Reohr
IPC分类号： G11C7/00
CPC分类号： G11C7/12 , G11C7/02 , G11C7/065 , G11C7/18 , G11C11/4091 , G11C11/4094 , G11C11/4097
摘要： A sense amplifier circuit for sensing a logic state of a selected memory cell in a memory circuit includes a precharge circuit and a latch circuit. The precharge circuit is adapted for connection to a pair of complementary bit lines corresponding to the selected memory cell and is operative to selectively drive the pair of complementary bit lines to a first voltage in response to a first control signal. The latch circuit is adapted for connection to the pair of complementary bit lines. The sense amplifier circuit further includes a replication circuit adapted for connection to the pair of complementary bit lines. The replication circuit is operative to selectively transfer a voltage representative of a logic state on a first bit line of the pair of complementary bit lines to a second bit line of the pair of complementary bit lines in response to at least a second control signal.
摘要翻译： 用于感测存储器电路中所选存储单元的逻辑状态的读出放大器电路包括预充电电路和锁存电路。 预充电电路适于连接到对应于所选择的存储器单元的一对互补位线，并且可操作以响应于第一控制信号选择性地将该对互补位线驱动到第一电压。 锁存电路适于连接到该对互补位线。 读出放大器电路还包括适于连接到该对互补位线的复制电路。 复制电路可操作以响应于至少第二控制信号，将表示该对互补位线的第一位线上的逻辑状态的电压选择性地传送到该对互补位线对的第二位线。
-
公开(公告)号：US07257042B2
公开(公告)日：2007-08-14
申请号：US11330539
申请日：2006-01-12
申请人： William Robert Reohr
发明人： William Robert Reohr
IPC分类号： G11C7/00
CPC分类号： G11C7/12 , G11C7/02 , G11C7/065 , G11C7/18 , G11C11/4091 , G11C11/4094 , G11C11/4097
摘要： A sense amplifier circuit for sensing a logic state of a selected memory cell in a memory circuit includes a precharge circuit and a latch circuit. The precharge circuit is adapted for connection to a pair of complementary bit lines corresponding to the selected memory cell and is operative to selectively drive the pair of complementary bit lines to a first voltage in response to a first control signal. The latch circuit is adapted for connection to the pair of complementary bit lines. The sense amplifier circuit further includes a replication circuit adapted for connection to the pair of complementary bit lines. The replication circuit is operative to selectively transfer a voltage representative of a logic state on a first bit line of the pair of complementary bit lines to a second bit line of the pair of complementary bit lines in response to at least a second control signal.
摘要翻译： 用于感测存储器电路中所选存储单元的逻辑状态的读出放大器电路包括预充电电路和锁存电路。 预充电电路适于连接到对应于所选择的存储器单元的一对互补位线，并且可操作以响应于第一控制信号选择性地将该对互补位线驱动到第一电压。 锁存电路适于连接到该对互补位线。 读出放大器电路还包括适于连接到该对互补位线的复制电路。 复制电路可操作以响应于至少第二控制信号，将表示该对互补位线的第一位线上的逻辑状态的电压选择性地传送到该对互补位线对的第二位线。
-
公开(公告)号：US20200028512A1
公开(公告)日：2020-01-23
申请号：US16546952
申请日：2019-08-21
IPC分类号： H03K19/195 , H03K19/177 , G06N10/00
摘要： Superconducting logic arrays (SLAs) and field-programmable gate arrays (FPGAs) that are based on Josephson transmission lines (JTLs) accommodate reciprocal quantum logic (RQL) compliant binary input signals and provide RQL-compliant output signals that are evaluations of generalized logic functions. Each JTL-based superconducting FPGA (JTLBSFPGA) incorporates multiple JTL-based SLAs (JTLBSLAs) connected together. Each JTLBSLA includes an array of software-programmable and/or mask-programmed logic cells that output products of inputs and cell states, such that the JTLBSLAs output evaluations of sum-of-products functions. New JTLBSLA logic cells are described, including some that provide programmable cell states via magnetic Josephson junctions (MJJs). JTLBSFPGAs provide area efficiency and clock speed advantages over CMOS FPGAs. Unlike SLAs based on Josephson magnetic random access memory (JMRAM), JTLBSLAs do not require word line drivers, flux pumps, or sense amplifiers. Because JTLBSLAs and JTLBSFPGAs are RQL-compliant, they can also include RQL gates connected within or between them, without signal conversion circuitry.
-
公开(公告)号：US20170229167A1
公开(公告)日：2017-08-10
申请号：US15170616
申请日：2016-06-01
申请人： WILLIAM ROBERT REOHR , STEVEN BRIAN SHAUCK , DONALD LYNN MILLER , JEREMY WILLIAM HORNER , NATHAN TRENT JOSEPHSEN
发明人： WILLIAM ROBERT REOHR , STEVEN BRIAN SHAUCK , DONALD LYNN MILLER , JEREMY WILLIAM HORNER , NATHAN TRENT JOSEPHSEN
IPC分类号： G11C11/44
CPC分类号： G11C11/44 , B82Y10/00 , B82Y20/00 , B82Y25/00 , G11C7/12 , G11C7/22 , G11C8/04 , G11C8/18 , G11C11/16 , G11C11/1655 , G11C11/1657 , G11C11/1659 , G11C11/1693 , G11C19/32
摘要： One embodiment describes a quantum memory system. The system includes an array controller that comprises a plurality of flux pumps configured to provide write currents in a write operation and read currents in a read operation with respect to a plurality of quantum memory cells, the array controller being configured to control timing associated with the write operation and the read operation in response to memory request signals based on application of the write currents and the read currents and based on recharging flux associated with the plurality of flux pumps.
-
公开(公告)号：US08860425B2
公开(公告)日：2014-10-14
申请号：US13411068
申请日：2012-03-02
IPC分类号： G01R31/14
CPC分类号： G01R31/3008
摘要： A test circuit for detecting a leakage defect in a circuit under test includes a test stimulus circuit operative to drive an otherwise defect-free, characteristically capacitive node in the circuit under test to a prescribed voltage level, and an observation circuit having at least one threshold and adapted for connection with at least one node in the circuit under test. The observation circuit is operative to detect a voltage level of the node in the circuit under test and to generate an output signal indicative of whether the voltage level of the node is less than the threshold. The voltage level of the node being less than the threshold is indicative of a first type of leakage defect, and the voltage level of the node being greater than the threshold is indicative of a second type of leakage defect.
摘要翻译： 一种用于检测被测电路中的泄漏缺陷的测试电路包括一个测试激励电路，用于将被测电路中的其它无缺陷特征电容性节点驱动到规定的电压电平，以及具有至少一个阈值的观测电路 并且适于与被测电路中的至少一个节点连接。 观察电路可操作以检测被测电路中的节点的电压电平并产生指示节点的电压电平是否小于阈值的输出信号。 节点小于阈值的电压电平表示第一类型的漏电缺陷，并且节点大于阈值的电压电平表示第二类泄漏缺陷。
-
公开(公告)号：US08120968B2
公开(公告)日：2012-02-21
申请号：US12704703
申请日：2010-02-12
申请人： William Robert Reohr , John Edward Barth, Jr. , Toshiaki Kirihata , Derek H. Leu , Donald W. Plass
发明人： William Robert Reohr , John Edward Barth, Jr. , Toshiaki Kirihata , Derek H. Leu , Donald W. Plass
IPC分类号： G11C16/06
CPC分类号： G11C8/08 , G11C11/4085
摘要： A word line driver circuit coupled to a memory circuit word line includes pull-up, pull-up clamp, pull-down and pull-down clamp transistors, each having a source, a drain and a gate. For the pull-up transistor, the source is coupled to a first power supply, and the gate to a pull-up control signal. For the pull-up clamp transistor, the source is coupled to the drain of the pull-up transistor, the drain to the word line, and the gate to a pull-up clamp gate signal. For the pull-down transistor, the source is coupled to a second power supply, and the gate to a pull-down control signal. For the pull-down clamp transistor, the source is coupled to the drain of the pull-down transistor, the drain to the word line, and the gate to a pull-down clamp gate signal. The word line is coupled to one or more DRAM cells. Source to drain voltage magnitudes of the pull-up and pull-down transistors are less than a voltage between the first and second power supplies.
摘要翻译： 耦合到存储器电路字线的字线驱动电路包括上拉，上拉钳位，下拉和下拉钳位晶体管，每个具有源极，漏极和栅极。 对于上拉晶体管，源极耦合到第一电源，并将栅极耦合到上拉控制信号。 对于上拉钳位晶体管，源极耦合到上拉晶体管的漏极，到字线的漏极，并将栅极耦合到上拉钳位信号。 对于下拉晶体管，源极耦合到第二电源，并将栅极耦合到下拉控制信号。 对于下拉钳位晶体管，源极耦合到下拉晶体管的漏极，漏极到字线，而栅极耦合到下拉钳位栅极信号。 字线耦合到一个或多个DRAM单元。 源极到漏极上拉和下拉晶体管的电压幅度小于第一和第二电源之间的电压。
-
公开(公告)号：US20110199837A1
公开(公告)日：2011-08-18
申请号：US12704703
申请日：2010-02-12
申请人： William Robert Reohr , John Edward Barth, JR. , Toshiaki Kirihata , Derek H. Leu , Donald W. Plass
发明人： William Robert Reohr , John Edward Barth, JR. , Toshiaki Kirihata , Derek H. Leu , Donald W. Plass
CPC分类号： G11C8/08 , G11C11/4085
摘要： A word line driver circuit coupled to a memory circuit word line includes pull-up, pull-up clamp, pull-down and pull-down clamp transistors, each having a source, a drain and a gate. For the pull-up transistor, the source is coupled to a first power supply, and the gate to a pull-up control signal. For the pull-up clamp transistor, the source is coupled to the drain of the pull-up transistor, the drain to the word line, and the gate to a pull-up clamp gate signal. For the pull-down transistor, the source is coupled to a second power supply, and the gate to a pull-down control signal. For the pull-down clamp transistor, the source is coupled to the drain of the pull-down transistor, the drain to the word line, and the gate to a pull-down clamp gate signal. The word line is coupled to one or more DRAM cells. Source to drain voltage magnitudes of the pull-up and pull-down transistors are less than a voltage between the first and second power supplies.
摘要翻译： 耦合到存储器电路字线的字线驱动电路包括上拉，上拉钳位，下拉和下拉钳位晶体管，每个具有源极，漏极和栅极。 对于上拉晶体管，源极耦合到第一电源，并将栅极耦合到上拉控制信号。 对于上拉钳位晶体管，源极耦合到上拉晶体管的漏极，到字线的漏极，并将栅极耦合到上拉钳位信号。 对于下拉晶体管，源极耦合到第二电源，并将栅极耦合到下拉控制信号。 对于下拉钳位晶体管，源极耦合到下拉晶体管的漏极，漏极到字线，而栅极耦合到下拉钳位栅极信号。 字线耦合到一个或多个DRAM单元。 源极到漏极上拉和下拉晶体管的电压幅度小于第一和第二电源之间的电压。
-
19.发明授权公开(公告)号：US07945765B2
公开(公告)日：2011-05-17
申请号：US12023495
申请日：2008-01-31
IPC分类号： G06F9/38
CPC分类号： G06F9/3867 , G06F9/383 , G06F9/3869 , G06F9/3873
摘要： An electronic apparatus includes a plurality of stages serially interconnected as a pipeline to perform sequential processings on input operands. A shortening circuit associated with at least one stage of the pipeline recognizes when one or more of input operands for the stage has been predetermined as appropriate for shortening and execute the shortening when appropriate.
摘要翻译： 电子装置包括多个级串联地连接作为流水线，以对输入操作数进行顺序处理。 与流水线的至少一个级相关联的缩短电路识别出当适当的时候，对于阶段的输入操作数中的一个或多个已被预先确定，以便缩短并执行缩短。
-
公开(公告)号：US07920434B2
公开(公告)日：2011-04-05
申请号：US12199438
申请日：2008-08-27
IPC分类号： G11C5/00
CPC分类号： G11C11/4091 , G11C11/4097
摘要： Techniques for sensing data states of respective memory cells in a memory array are provided, the memory array including at least a first bit line coupled to at least a subset of the memory cells. In one aspect, a circuit for sensing data states of respective memory cells in the memory array includes at least one sense amplifier coupled to the first bit line. The sense amplifier includes a first transistor operative to selectively inhibit charging of the first bit line in a manner which is independent of a voltage level on a second bit line coupled to the sense amplifier.
摘要翻译： 提供了用于感测存储器阵列中的相应存储器单元的数据状态的技术，所述存储器阵列至少包括耦合到所述存储器单元的至少一个子集的第一位线。 在一个方面，用于感测存储器阵列中各个存储单元的数据状态的电路包括耦合到第一位线的至少一个读出放大器。 感测放大器包括第一晶体管，其操作以选择性地禁止第一位线的充电，其方式与在与读出放大器耦合的第二位线上的电压电平无关。
-
-
-
-
-
-
-
-
-
搜索结果
65 条记录 (耗时 0.019 秒)
