公开(公告)号：US20100165159A1

公开(公告)日：2010-07-01

申请号：US12723319

申请日：2010-03-12

申请人： Tetsuro Kumesawa

发明人： Tetsuro Kumesawa

IPC分类号： H04N5/335

CPC分类号： H04N5/2355 ,  H01L27/14601 ,  H01L27/14643 ,  H01L27/14806 ,  H04N5/35527 ,  H04N5/3728

摘要： A solid state imaging device in which Υ characteristic is obtained and enlargement of dynamic range is provided. The solid state imaging device of the present invention includes a vertical overflow function and has a feature in which potential of a semiconductor substrate is changed from a high potential to a low potential in a stepwise manner during a period from an exposure start to an exposure end.

摘要翻译： 一种固态成像装置，其中＆Ugr; 获得特征并提供动态范围的放大。 本发明的固态成像装置包括垂直溢出功能，其特征在于，从曝光开始到曝光结束的期间，半导体基板的电位从高电位向低电位变化为阶梯式 。

公开(公告)号：US20060022223A1

公开(公告)日：2006-02-02

申请号：US11243910

申请日：2005-10-04

申请人： Tetsuro Kumesawa

发明人： Tetsuro Kumesawa

IPC分类号： H01L27/148

CPC分类号： H04N5/2355 ,  H01L27/14601 ,  H01L27/14643 ,  H01L27/14806 ,  H04N5/35527 ,  H04N5/3728

摘要： A solid state imaging device in which γ characteristic is obtained and enlargement of dynamic range is provided. The solid state imaging device of the present invention includes a vertical overflow function and has a feature in which potential of a semiconductor substrate is changed from a high potential to a low potential in a stepwise manner during a period from an exposure start to an exposure end.

公开(公告)号：US5892251A

公开(公告)日：1999-04-06

申请号：US892935

申请日：1997-07-15

申请人： Tetsuro Kumesawa ,  Hiromichi Matsui

发明人： Tetsuro Kumesawa ,  Hiromichi Matsui

IPC分类号： H01L29/762 ,  G11C19/28 ,  H01L21/339 ,  H01L27/148 ,  H01L29/768

CPC分类号： H01L29/76816 ,  G11C19/285 ,  H01L27/14831 ,  H01L29/76833

摘要： A charge transferring apparatus comprising, e.g., a buried type charge coupled device in which a pair of transfer electrodes located at the most downstream point of a charge transfer direction is driven by a drive pulse other than that for any other pair of transfer electrodes and a potential well formed at the pair of the transfer electrodes located at the most downstream point is made shallower than that at any other pair of transfer electrodes allowing the output dynamic range of a charge transfer device to be increased for improving the output quality.

摘要翻译： 一种电荷转移装置，其包括例如掩埋型电荷耦合器件，其中位于电荷转移方向的最下游点的一对转移电极由不同于任何另一对转移电极的驱动脉冲驱动， 在位于最下游点的一对转移电极处良好形成的电位比在任何另一对转移电极处的电位更浅，允许增加电荷转移装置的输出动态范围以提高输出质量。

公开(公告)号：US5495289A

公开(公告)日：1996-02-27

申请号：US369257

申请日：1995-01-05

申请人： Tetsuro Kumesawa

发明人： Tetsuro Kumesawa

IPC分类号： H04N5/335 ,  H04N5/341 ,  H04N5/351 ,  H04N5/357 ,  H04N5/359 ,  H04N5/3722 ,  H04N5/376

CPC分类号： H04N3/1531

摘要： An FIT solid state image sensor including an image section having an array of photosensitive elements, a storage section for temporarily storing signal charges transferred thereto from the image section, a plurality of vertical shift registers provided for respective vertical lines of the array, and a horizontal shift register for horizontally transferring the signal charges transferred vertically through the vertical shift registers. Clock pulses are applied to the vertical transfer registers during a line shift transfer period of transferring the signal charges from the storage section to the horizontal shift register. The voltage levels of the clock pulses are set to provide the same potential between the photosensitive elements arranged in odd horizontal lines of the array and the photosensitive elements arranged in even horizontal line of the array.

摘要翻译： 一种FIT固态图像传感器，包括具有光敏元件阵列的图像部分，用于临时存储从图像部分转移到其中的信号电荷的存储部分，为阵列的各个垂直线设置的多个垂直移位寄存器，以及水平 移位寄存器用于水平传输通过垂直移位寄存器垂直传输的信号电荷。 在将信号电荷从存储部分传送到水平移位寄存器的线路移位传送期间，时钟脉冲被施加到垂直传送寄存器。 时钟脉冲的电压电平被设置为在排列在阵列的奇数水平线的光敏元件和排列成阵列的均匀水平线的感光元件之间提供相同的电位。