Composition For Forming Silicon-Containing Resist Underlayer Film And Patterning Process

    公开(公告)号:US20240319598A1

    公开(公告)日:2024-09-26

    申请号:US18594575

    申请日:2024-03-04

    摘要: The present invention is a composition for forming a silicon-containing resist underlayer film, containing a condensation reaction-type thermosetting silicon-containing material (Sx), being a polysiloxane resin, where the material has a non-condensation reactive organic group that reacts with a radical chemical species, the resin includes more than 0 and 70 mol % or less of one or more of a repeating unit represented by the following general formula (Sx-4) and a repeating unit represented by the general formula (Sx-5), and the organic group remains unreacted after a heat-curing reaction of the polysiloxane resin. This provides: a composition for forming a resist underlayer film containing a thermosetting silicon-containing material in photolithography using a high-energy beam, the material improving sensitivity, LWR, and resolution of an upper layer resist and further contributing to the prevention of pattern collapse; and a patterning process using the composition for forming a resist underlayer film.

    RESIST COMPOSITION AND PATTERN FORMING PROCESS

    公开(公告)号:US20240310725A1

    公开(公告)日:2024-09-19

    申请号:US18590834

    申请日:2024-02-28

    发明人: Jun Hatakeyama

    IPC分类号: G03F7/004 G03F7/038 G03F7/039

    摘要: The present invention relates to a resist composition and a pattern forming process. The quencher is capable of improving the LWR of line patterns or the dimensional uniformity (CDU) of hole patterns and enhancing sensitivity. The resist composition exhibits higher sensitivity and improved LWR and CDU regardless of whether it is of positive or negative tone, and a pattern forming process using the resist composition. The resist composition comprises a quencher containing a disulfonium salt having formula (1).