公开(公告)号：US20050213949A1

公开(公告)日：2005-09-29

申请号：US11132539

申请日：2005-05-19

申请人： Zion Koren ,  Conor O'Carroll ,  Shuen Choy ,  Paul Timans ,  Rudy Cardema ,  James Taoka ,  Arieh Strod

发明人： Zion Koren ,  Conor O'Carroll ,  Shuen Choy ,  Paul Timans ,  Rudy Cardema ,  James Taoka ,  Arieh Strod

IPC分类号： C23C16/48 ,  C30B25/10 ,  C30B31/12 ,  H01L21/00 ,  A21B2/00 ,  F26B19/00

CPC分类号： H01L21/67115 ,  C23C16/481 ,  C30B25/105 ,  C30B31/12

摘要： An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly linear lamps for emitting light energy onto a wafer. The linear lamps can be placed in various configurations. In accordance with the present invention, tuning devices which are used to adjust the overall irradiance distribution of the light energy sources are included in the heating device. The tuning devices can be, for instance, are lamps or lasers.

公开(公告)号：US20070297775A1

公开(公告)日：2007-12-27

申请号：US11853414

申请日：2007-09-11

申请人： Zion Koren ,  Conor O'Carroll ,  Shuen Choy ,  Paul Timans ,  Rudy Santo Cardema ,  James Taoka ,  Arieh Strod

发明人： Zion Koren ,  Conor O'Carroll ,  Shuen Choy ,  Paul Timans ,  Rudy Santo Cardema ,  James Taoka ,  Arieh Strod

IPC分类号： F26B3/30

CPC分类号： H01L21/67115 ,  C23C16/481 ,  C30B25/105 ,  C30B31/12

摘要： An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly linear lamps for emitting light energy onto a wafer. The linear lamps can be placed in various configurations. In accordance with the present invention, tuning devices which are used to adjust the overall irradiance distribution of the light energy sources are included in the heating device. The tuning devices can be, for instance, are lamps or lasers.

摘要翻译： 公开了一种用于热处理半导体晶片的设备。 该装置包括加热装置，其包含用于将光能发射到晶片上的组装线性灯。 线性灯可以放置在各种配置中。 根据本发明，用于调节光能源的总体辐照度分布的调谐装置包括在加热装置中。 调谐装置可以是例如灯或激光器。

公开(公告)号：US20060228897A1

公开(公告)日：2006-10-12

申请号：US11102496

申请日：2005-04-08

申请人： Paul Timans

发明人： Paul Timans

IPC分类号： H01L21/00 ,  H01L23/58

CPC分类号： H01L21/67115

摘要： A method that is performed for heat treating a semiconductor wafer in a process chamber, as an intermediate part of an overall multi-step technique for processing the wafer, includes applying an energy transfer layer to at least a portion of the wafer, and exposing the wafer to an energy source in the process chamber in a way which subjects the wafer to a thermal profile such that the energy transfer layer influences at least one part of the thermal profile. The thermal profile has at least a first elevated temperature event. The method further includes, in time relation to the thermal profile, removing the energy transfer layer in the process chamber at least sufficiently for subjecting the wafer to a subsequent step. An associated intermediate condition of the wafer is described.

公开(公告)号：US20050098553A1

公开(公告)日：2005-05-12

申请号：US10706367

申请日：2003-11-12

申请人： Daniel Devine ,  Young Lee ,  Paul Timans ,  Frank Lema

发明人： Daniel Devine ,  Young Lee ,  Paul Timans ,  Frank Lema

IPC分类号： B23H20060101 ,  F27B5/14 ,  F27B17/00 ,  F27D5/00 ,  F27D11/00 ,  H01L21/00

CPC分类号： H01L21/67115 ,  F27B17/0025 ,  F27D5/0037

摘要： As part of a system for processing a workpiece by applying a controlled heat to the workpiece, a heating arrangement includes an array of spaced apart heating elements for use in a confronting relationship with the workpiece to subject the workpiece to a direct radiation that is produced. A radiation shield includes a plurality of members supported for movement between (i) retracted positions, which allow the direct radiation to reach the workpiece, and (ii) extended positions, in which the plurality of members cooperate in way which serves to at least partially block the direct radiation from reaching the workpiece and to absorb radiation emitted and reflected by the workpiece and thereby achieve greater control of the time-temperature profile than previously obtainable. At least certain ones of the members move between adjacent ones of the heating elements in moving those certain members between the retracted and extended positions. Tubular, curved and plate-like member configurations can be used.

摘要翻译： 作为通过向工件施加受控热来加工工件的系统的一部分，加热装置包括用于与工件面对关系的间隔开的加热元件的阵列，以使工件受到所产生的直接辐射。 辐射屏蔽包括多个构件，所述多个构件被支撑用于在（i）缩回位置之间移动，所述缩回位置允许直接辐射到达工件;以及（ii）延伸位置，其中所述多个构件以其至少部分 阻止直接辐射到达工件并吸收工件发射和反射的辐射，从而实现比以前可获得的时间 - 温度分布的更大控制。 至少某些构件在相邻的加热元件之间移动，以在缩回位置和延伸位置之间移动那些特定构件。 可以使用管状，弯曲和板状构件构造。

公开(公告)号：US20050023267A1

公开(公告)日：2005-02-03

申请号：US10629400

申请日：2003-07-28

申请人： Paul Timans ,  Daniel Devine ,  Young Lee ,  Yao Hu ,  Peter Bordiga

发明人： Paul Timans ,  Daniel Devine ,  Young Lee ,  Yao Hu ,  Peter Bordiga

IPC分类号： F27B5/14 ,  F27B17/00 ,  F27D11/00 ,  H01L20060101 ,  H01L21/00

CPC分类号： H01L21/67115 ,  F27B17/0025

摘要： A customizable chamber spectral response is described which can be used at least to tailor chamber performance for wafer heating, wafer cooling, temperature measurement, and stray light. In one aspect, a system is described for processing a treatment object having a given emission spectrum at a treatment object temperature which causes the treatment object to produce a treatment object radiated energy. The chamber responds in a first way to the heating arrangement radiated energy and in a second way to the treatment object radiated energy that is incident thereon. The chamber may respond in the first way by reflecting the majority of the heat source radiated energy and in the second way by absorbing the majority of the treatment object radiated energy. Different portions of the chamber may be treated with selectively reflectivity based on design considerations to achieve objectives with respect to a particular chamber performance parameter.

摘要翻译： 描述了可定制的室光谱响应，其可以至少用于定制晶片加热，晶片冷却，温度测量和杂散光的室性能。 在一个方面，描述了一种系统，用于处理在处理对象温度下具有给定发射光谱的治疗对象，其使得治疗对象产生治疗对象的辐射能。 室以第一种方式响应于加热装置的辐射能量，并以第二种方式响应入射在其上的处理对象辐射能。 通过反映大部分热源辐射能量，腔室可以以第一种方式作出反应，并且以第二种方式吸收大部分治疗对象的辐射能量。 可以基于设计考虑来选择反射率来处理室的不同部分，以实现关于特定室性能参数的目标。