INTEGRATED ESD PROTECTION CIRCUITS IN GAN
    11.
    发明申请
    INTEGRATED ESD PROTECTION CIRCUITS IN GAN 审中-公开
    集成ESD保护电路

    公开(公告)号:US20160372920A1

    公开(公告)日:2016-12-22

    申请号:US14743815

    申请日:2015-06-18

    IPC分类号: H02H9/04 H01L27/02

    摘要: An electronic circuit is disclosed and described herein. The circuit includes first and second pins, and an overvoltage protection circuit including a first enhancement-mode transistor. The overvoltage protection circuit is disposed on a GaN-based substrate, and the first enhancement mode transistor is configured to provide overvoltage protection between the first and second pins.

    摘要翻译: 本文公开并描述了电子电路。 电路包括第一和第二引脚,以及包括第一增强型晶体管的过电压保护电路。 过电压保护电路设置在GaN基基板上,第一增强型晶体管被配置为在第一和第二引脚之间提供过电压保护。

    SOFT SWITCHED SINGLE STAGE WIRELESS POWER TRANSFER
    13.
    发明申请
    SOFT SWITCHED SINGLE STAGE WIRELESS POWER TRANSFER 有权
    软开关单级无线电力传输

    公开(公告)号:US20160164346A1

    公开(公告)日:2016-06-09

    申请号:US15007132

    申请日:2016-01-26

    发明人: Ju Jason Zhang

    IPC分类号: H02J50/12 H02J5/00

    摘要: A control scheme and architecture for a wireless electrical energy transmission circuit employs two solid-state switches and a zero voltage switching (ZVS) topology to power an antenna network. The switches drive the antenna network at its resonant frequency and simultaneously energize a separate resonant circuit that has a resonant frequency lower than the antenna circuit. The resonant circuit creates out of phase voltage and current waveforms that enable the switches to operate with (ZVS).

    摘要翻译: 无线电能传输电路的控制方案和架构采用两个固态开关和零电压开关(ZVS)拓扑来为天线网络供电。 开关以其谐振频率驱动天线网络,同时使具有低于天线电路的谐振频率的单独谐振电路通电。 谐振电路产生异相电压和电流波形,使开关能够(ZVS)工作。

    HALF BRIDGE DRIVER CIRCUITS
    15.
    发明申请
    HALF BRIDGE DRIVER CIRCUITS 有权
    半桥驱动电路

    公开(公告)号:US20160079975A1

    公开(公告)日:2016-03-17

    申请号:US14877574

    申请日:2015-10-07

    IPC分类号: H03K17/687 H02M3/158

    摘要: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments, a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Both the high side and the low side devices may have one or more integrated control, support and logic functions.

    摘要翻译: 基于GaN的半桥功率转换电路采用单片集成在与功率晶体管相同的器件上的控制,支持和逻辑功能。 在一些实施例中,低边GaN器件通过一个或多个电平移位电路与高边GaN器件通信。 高侧和低侧设备都可以具有一个或多个集成的控制,支持和逻辑功能。

    Power transistor control signal gating

    公开(公告)号:US10833589B2

    公开(公告)日:2020-11-10

    申请号:US16292315

    申请日:2019-03-04

    摘要: A half bridge circuit is disclosed. The circuit includes low side and high side power switches selectively conductive according to one or more control signals. The circuit also includes a low side power switch driver, configured to control the conductivity state of the low side power switch, and a high side power switch driver, configured to control the conductivity state of the high side power switch. The circuit also includes a controller configured to generate the one or more control signals, a high side slew detect circuit configured to prevent the high side power switch driver from causing the high side power switch to be conductive while the voltage at the switch node is increasing, and a low side slew detect circuit configured to prevent the low side power switch driver from causing the low side power switch to be conductive while the voltage at the switch node is decreasing.

    GAN driver circuit
    17.
    发明授权

    公开(公告)号:US10811951B1

    公开(公告)日:2020-10-20

    申请号:US16748777

    申请日:2020-01-21

    摘要: A GaN driver circuit is disclosed. The circuit includes a low side switch causing the voltage at an output node to be a first voltage, a high side switch causing the voltage at the output node to be a second voltage in response to a control signal, and a high side switch driver circuit configured to cause the high side switch to apply the second voltage to the output node. The high side switch driver includes a pull-down switch configured to turn off the high side switch in response to an input signal, and a pass gate configured to cause the high side switch to apply the second voltage to the output node by causing the voltage of the control signal to become substantially equal to the second voltage plus a third voltage.

    CURRENT DETECTION FET AND RESONANT CONVERTER USING THE FET

    公开(公告)号:US20200328682A1

    公开(公告)日:2020-10-15

    申请号:US16865008

    申请日:2020-05-01

    IPC分类号: H02M3/158 H02M1/00

    摘要: A current detecting GaN FET is disclosed. The current detecting GaN FET includes a first GaN switch having a first gate, a first drain, a first source, and a first field plate. The current detecting GaN FET also includes a second GaN switch having a second gate, a second drain, a second source, and a second field plate. The current detecting GaN FET also includes a resistor. The first and second gates are electrically connected, the first and second drains are electrically connected, and the resistor is connected between the first and second sources.

    BOOTSTRAP POWER SUPPLY CIRCUIT
    19.
    发明申请

    公开(公告)号:US20200321849A1

    公开(公告)日:2020-10-08

    申请号:US16828747

    申请日:2020-03-24

    IPC分类号: H02M1/08 H02M3/158 H03K17/081

    摘要: A GaN half bridge circuit is disclosed. The circuit includes a bootstrap power supply voltage generator is configured to supply a first power voltage and includes a switch node. The circuit also includes a bootstrap transistor, a bootstrap transistor drive circuit, and a bootstrap capacitor connected to the switch node and to the bootstrap transistor. The bootstrap capacitor is configured to supply the first power voltage while the voltage at the switch node is equal to the second switch node voltage, the bootstrap transistor is configured to electrically connect the bootstrap capacitor to a power node at a second power voltage while the voltage at the switch node is equal to the first switch node voltage, and the bootstrap power supply voltage generator does not include a separate diode in parallel with the drain and source of the bootstrap transistor.

    Bidirectional GaN switch with built-in bias supply and integrated gate drivers

    公开(公告)号:US10651843B1

    公开(公告)日:2020-05-12

    申请号:US15967199

    申请日:2018-04-30

    摘要: A DC-AC converter is disclosed. The DC-AC converter generates an output AC signal, and has an input DC-AC converter which generates a first AC signal, a transformer device which receives the first AC signal and generates a second AC signal, and a first bidirectional switch which selectively connects a first transformer output terminal and a first output terminal. The DC-AC converter also has a first capacitor which powers the first bidirectional switch, a first charging circuit which charges the first capacitor, and a second bidirectional which selectively conduct connects a second transformer output terminal and a second output terminal. The DC-AC converter also has a second capacitor which powers the second bidirectional switch, and a second charging circuit which charges the second capacitor. Each of the bidirectional switches includes series connected transistors between first and second input/output terminals, and a transistor driver which drives the transistors.