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15 条记录 (耗时 0.016 秒)

    Three color quantum well infrared photodetector focal plane array
    11.
    发明授权
    Three color quantum well infrared photodetector focal plane array 失效
    三色量子阱红外光电探测器焦平面阵列

    公开(公告)号：US06521967B1

    公开(公告)日：2003-02-18

    申请号：US09629396

    申请日：2000-08-01

    申请人： Sumith V. Bandara ,  John K. Liu ,  Daniel Wilson ,  Sarath D. Gunapala ,  William Parrish

    发明人： Sumith V. Bandara ,  John K. Liu ,  Daniel Wilson ,  Sarath D. Gunapala ,  William Parrish

    IPC分类号： H01L3100

    CPC分类号： H01L27/14652 ,  G01J5/10 ,  Y10S977/72 ,  Y10S977/759 ,  Y10S977/815

    摘要： A three-color QWIP focal plane array is based on a GaAs/AlGaAs material system. Three-color QWIPs enable target recognition and discriminating systems to precisely obtain the temperature of two objects in the presence of a third unknown parameter. The QWIPs are designed to reduce the normal reflection over a significant wavelength range. One aspect of the present invention involves two photon absorptions per transition in a double quantum well structure which is different from typical QWIP structures. This design is expected to significantly reduce the dark current as a result of higher thermionic barriers and therefore allow the devices to operate at elevated temperatures. The device is expected to be fabricate using a GaAs/AlxGa1−xAs material system on a semi-insulating GaAs substrate by Molecular Beam Epitacy (MBE).

    摘要翻译： 三色QWIP焦平面阵列基于GaAs / AlGaAs材料系统。 三色QWIP使目标识别和识别系统能够在存在第三个未知参数的情况下精确获得两个物体的温度。 QWIP设计用于在明显的波长范围内减少正常反射。 本发明的一个方面涉及双重量子阱结构中每个跃迁的两个光子吸收，其不同于典型的QWIP结构。 由于较高的热离子屏障，预期这种设计将显着降低暗电流，因此允许器件在升高的温度下工作。 该器件预计将使用GaAs / AlxGa1-xAs材料系统在半绝缘GaAs衬底上通过Molecular Beam Epitacy（MBE）进行制造。

    Infrared radiation-detecting device
    12.
    发明授权
    Infrared radiation-detecting device 失效
    红外辐射检测装置

    公开(公告)号：US06734452B2

    公开(公告)日：2004-05-11

    申请号：US09825875

    申请日：2001-04-03

    申请人： Sarath Gunapala ,  John K. Liu ,  Jin S. Park ,  True-Lon Lin ,  Mani Sundaram

    发明人： Sarath Gunapala ,  John K. Liu ,  Jin S. Park ,  True-Lon Lin ,  Mani Sundaram

    IPC分类号： H01L2906

    CPC分类号： B82Y20/00 ,  G01J5/28 ,  H01L31/035236 ,  Y10S977/759 ,  Y10S977/761 ,  Y10S977/915 ,  Y10S977/927

    摘要： An AlxGa1−xAs/GaAs/AlxGa1−xAs quantum well exhibiting a bound-to-quasibound intersubband absorptive transition is described. The bound-to-quasibound transition exists when the first excited state has the same energy as the “top” (i.e., the upper-most energy barrier) of the quantum well. The energy barrier for thermionic emission is thus equal to the energy required for intersubband absorption. Increasing the energy barrier in this way reduces dark current. The amount of photocurrent generated by the quantum well is maintained at a high level.

    摘要翻译： 描述了表现出界限对准的子带间吸收转变的Al x Ga 1-x As / GaAs / Al x Ga 1-x As量子阱。 当第一激发态具有与量子阱的“顶部”（即，最上面的能量势垒）相同的能量时，存在边界到准近渡的转变。 因此，热离子发射的能量势垒等于子带间吸收所需的能量。 以这种方式增加能量屏障可以减少暗电流。 由量子阱产生的光电流的量保持在高水平。