公开(公告)号：US20130107356A1

公开(公告)日：2013-05-02

申请号：US13334604

申请日：2011-12-22

Applicant: Tae In JEON ,  Eui Su LEE

Inventor： Tae In JEON ,  Eui Su LEE

IPC: G02B5/28 ,  G02B5/20

CPC classification number: G02B5/204 ,  G02B5/208 ,  G02B6/29389

Abstract: A terahertz band filter for filtering, in a frequency band, a terahertz wave propagating between a pair of metal plates with an upper parallel surface facing a lower parallel surface includes a sheet parallel to the upper and lower parallel surfaces, which is disposed between the metal plates and is spaced apart therefrom, and at least one slit located in the sheet to face the upper and lower parallel surfaces, wherein the sheet comprises a single slit to function as a notch filter for blocking in a specific frequency band.

Abstract translation: 太赫兹频带滤波器，用于在频带中过滤在一对金属板之间传播的太赫兹波，其中上平行表面面向下平行表面，包括平行于上和下平行表面的片，其设置在金属 板和与其间隔开的至少一个狭缝，以及位于片材中的至少一个狭缝，以面对上和下平行表面，其中片材包括用作陷波滤波器的单个狭缝，用于在特定频带中阻塞。

公开(公告)号：US20070077854A1

公开(公告)日：2007-04-05

申请号：US11490553

申请日：2006-07-21

Applicant: Dong-in Jeon ,  Sun-ah Park

Inventor： Dong-in Jeon ,  Sun-ah Park

IPC: A63H33/12

CPC classification number: A63H33/065 ,  A63H33/084

Abstract: Disclosed herein is a sectional three-dimensional model, which can be assembled by use of an independent single type of pieces without requiring several kinds of pieces having different shapes from one another, and achieve a three-dimensional connection of the pieces. The sectional three-dimensional model includes a plurality of spherical pieces, and each spherical piece includes a pair of coupling recesses symmetrically formed in the spherical piece along a center axis of the spherical piece, and a plurality of coupling protrusions integrally formed at an outer surface of the spherical piece to be arranged in directions perpendicular to the coupling recesses, thereby allowing the plurality of spherical pieces to be connected to one another via insertion of the coupling protrusions into the coupling recesses.

Abstract translation: 本文公开了一种截面三维模型，其可以通过使用独立的单一类型的部件组装而不需要彼此具有不同形状的几种片，并且实现片的三维连接。 截面三维模型包括多个球形件，并且每个球形件包括沿着球形件的中心轴对称地形成在球形件中的一对联接凹槽，以及在外表面上一体形成的多个联接突起 所述球形件被布置在垂直于所述联接凹槽的方向上，从而允许所述多个球形件通过将所述联接突起插入所述联接凹槽而彼此连接。

公开(公告)号：US20060208259A1

公开(公告)日：2006-09-21

申请号：US11441295

申请日：2006-05-24

Applicant: In Jeon

Inventor： In Jeon

IPC: H01L29/04

CPC classification number: H01L27/14685 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14643 ,  H01L27/14689 ,  H01L31/02162 ,  H01L31/0232

Abstract: CMOS image sensors and methods for fabricating the same are disclosed. A disclosed CMOS image sensor comprises: a semiconductor substrate; a photo diode; a microlens located over the photo diode; and a color filter layer located over the microlens.

Abstract translation: 公开了CMOS图像传感器及其制造方法。 公开的CMOS图像传感器包括：半导体衬底; 光电二极管; 位于光电二极管上方的微透镜; 以及位于微透镜上方的滤色器层。

公开(公告)号：US08913315B2

公开(公告)日：2014-12-16

申请号：US13334604

申请日：2011-12-22

Applicant: Tae In Jeon ,  Eui Su Lee

Inventor： Tae In Jeon ,  Eui Su Lee

IPC: G02B5/20 ,  G02B6/293

CPC classification number: G02B5/204 ,  G02B5/208 ,  G02B6/29389

Abstract: A terahertz band filter for filtering, in a frequency band, a terahertz wave propagating between a pair of metal plates with an upper parallel surface facing a lower parallel surface includes a sheet parallel to the upper and lower parallel surfaces, which is disposed between the metal plates and is spaced apart therefrom, and at least one slit located in the sheet to face the upper and lower parallel surfaces, wherein the sheet comprises a single slit to function as a notch filter for blocking in a specific frequency band.

Abstract translation: 太赫兹频带滤波器，用于在频带中过滤在一对金属板之间传播的太赫兹波，其中上平行表面面向下平行表面，包括平行于上和下平行表面的片，其设置在金属 板和与其间隔开的至少一个狭缝，以及位于片材中的至少一个狭缝，以面对上和下平行表面，其中片材包括用作陷波滤波器的单个狭缝，用于在特定频带中阻塞。

公开(公告)号：US20070083581A1

公开(公告)日：2007-04-12

申请号：US11634559

申请日：2006-12-06

Applicant: Jung Kim ,  In Jeon ,  Ik Eo

Inventor： Jung Kim ,  In Jeon ,  Ik Eo

IPC: G06F17/10

CPC classification number: H03H17/06 ,  H03H17/0225 ,  H03H2017/0072

Abstract: Provided are a multiplierless FIR digital filter and a method of designing the same, in which a filtering operation is performed by not multipliers needed as many as the number of tap depending on design requirement but a small addition/subtraction circuit using extracted information after analyzing the property of a given coefficient and extracting information required for design by only adding/subtracting operations. In the method of designing the multiplierless FIR digital filter, four tables are created to extract and store information needed for adding and subtracting operations to coefficients of design requirement, and an addition table is created to set a sixteen-multiple adding section of which a least upper bound is the maximum value of when the coefficient is represented into an integer by taking a decimal part of the coefficient, and to store values obtained by adding the input data input synchronizing with a clock frequency as a unit of sixteen sections. Further, a value corresponding to multiplication is obtained by performing extraction and error correction on the added values from four tables and the addition table, and an adder chain of an output terminal sums up the values and outputs the filtering results, thereby effectively implementing a logic circuit of the multiplierless FIR digital filter.

Abstract translation: 提供了一种无乘法FIR数字滤波器及其设计方法，其中，根据设计要求，不需要与抽头数量相同的乘法器执行滤波操作，而是在分析之后使用提取的信息的小的加/减电路 给定系数的属性，并通过加/减操作提取设计所需的信息。 在设计无乘数FIR数字滤波器的方法中，创建了四个表以提取和存储对于设计要求的系数的加法和减法运算所需的信息，并且创建附加表以设置其中最少的十六个加法部分 上限是通过取系数的小数部分将系数表示为整数，并将通过将与时钟频率同步输入的输入数据相加而获得的值存储为十六个部分的单位的最大值。 此外，通过对来自四个表和加法表的附加值执行提取和纠错来获得与乘法相对应的值，并且输出端的加法器链将该值相加并输出滤波结果，从而有效地实现逻辑 电路的无数FIR滤波器。

公开(公告)号：US20060273360A1

公开(公告)日：2006-12-07

申请号：US11447424

申请日：2006-06-05

Applicant: In Jeon

Inventor： In Jeon

IPC: H01L31/113

CPC classification number: H01L27/14601 ,  H01L27/14689

Abstract: A CMOS image sensor and manufacturing method thereof are disclosed. The present CMOS image sensor comprises: a semiconductor substrate including an active region having a photo diode region and a transistor region; a gate on the active region, comprising a gate insulating layer and a gate electrode thereon; a first source/drain diffusion region in the transistor region at one side of the gate electrode, including a first conductivity type dopant; a second photo diode diffusion region in the region at the other side of the gate electrode, the second diffusion region including a first conductivity type dopant; insulating sidewalls on sides of the gate electrode; and a third diffusion region over or in the second diffusion region, extending below one of the insulating sidewalls (e.g., closest to the photo diode region), and including a second conductivity type dopant.

Abstract translation: 公开了一种CMOS图像传感器及其制造方法。 本CMOS图像传感器包括：包括具有光电二极管区域和晶体管区域的有源区域的半导体衬底; 有源区上的栅极，其上包括栅极绝缘层和栅电极; 在栅极一侧的晶体管区域中的第一源极/漏极扩散区域，包括第一导电型掺杂剂; 在所述栅电极的另一侧的区域中的第二光电二极管扩散区，所述第二扩散区包括第一导电型掺杂剂; 绝缘侧壁在栅电极的侧面; 以及在第二扩散区域之上或之中的第三扩散区域，在绝缘侧壁之一（例如最靠近光电二极管区域）的下方延伸，并且包括第二导电型掺杂剂。

公开(公告)号：US20050067639A1

公开(公告)日：2005-03-31

申请号：US10747302

申请日：2003-12-30

Applicant: In Jeon ,  Kwang Kim ,  Jin Han

Inventor： In Jeon ,  Kwang Kim ,  Jin Han

IPC: H01L27/146 ,  H01L29/74 ,  H04N5/335 ,  H04N5/361 ,  H04N5/374

CPC classification number: H01L27/14689 ,  H01L27/14643

Abstract: A CMOS image sensor and a method for manufacturing the same, capable of preventing an interface between an active region and a field region in the CMOS image sensor from being damaged by ion implantation. The method comprises implanting dopant ions into a source region between a gate electrode of the reset transistor and the photodiode, using an ion implantation mask that covers predetermined locations of the field region and the source region.

Abstract translation: CMOS图像传感器及其制造方法能够防止CMOS图像传感器中的有源区域和场区域之间的界面被离子注入损坏。 该方法包括使用覆盖场区域和源极区域的预定位置的离子注入掩模将掺杂剂离子注入到复位晶体管的栅电极和光电二极管之间的源极区域中。

公开(公告)号：US07995502B2

公开(公告)日：2011-08-09

申请号：US12524447

申请日：2008-02-13

Applicant: Woo Jin Shim ,  Young Sik Shin ,  Yong Gil Park ,  Jae Hwang Yu ,  Jong Tae Ihm ,  Ho In Jeon

Inventor： Woo Jin Shim ,  Young Sik Shin ,  Yong Gil Park ,  Jae Hwang Yu ,  Jong Tae Ihm ,  Ho In Jeon

IPC: H04L12/28

CPC classification number: H04L61/2038 ,  H04L29/12254 ,  H04W8/26

Abstract: The present invention relates to a method of efficiently assigning addresses in a WPAN and a WPAN device. The address assignment method of the present invention is performed by a higher device. Address assignment information for determining an address to be assigned to a lower device, is managed. An address is assigned to a lower device that requests connection from the higher device based on the address assignment information. The address assignment information is updated to a address value as the address value is assigned, and the updated address assignment information is transmitted to lower devices. If an update of address assignment information is requested by the lower device that assigned an address value to a device lower thereto, the address assignment information is updated and the updated address assignment information is transmitted to lower devices.

Abstract translation: 本发明涉及一种在WPAN和WPAN设备中有效分配地址的方法。 本发明的地址分配方法由较高的装置进行。 管理用于确定要分配给下位装置的地址的地址分配信息。 根据地址分配信息，将地址分配给从较高设备请求连接的下位机。 地址分配信息被更新为地址值，并且将更新的地址分配信息发送到下位装置。 如果地址分配信息的更新被下位装置请求，下位装置将地址值分配给下位装置，则更新地址分配信息，将更新后的地址分配信息发送给下位装置。

公开(公告)号：US20060008940A1

公开(公告)日：2006-01-12

申请号：US11176721

申请日：2005-07-06

Applicant: In Jeon

Inventor： In Jeon

IPC: H01L21/00

CPC classification number: H01L27/14601 ,  H01L27/14689

Abstract: A method for fabricating a photodiode of a CMOS image sensor is disclosed, to improve a charge accumulation capacity in the photodiode, which includes the steps of defining a semiconductor substrate as an active area and a field area by forming an STI layer; firstly implanting impurity ions for formation of the photodiode to the semiconductor substrate of the active area; secondarily implanting impurity ions for formation of the photodiode to the semiconductor substrate being adjacent to the STI layer; and forming a photodiode ion-implantation diffusion layer by diffusing the implanted impurity ions with a thermal process.

Abstract translation: 公开了一种用于制造CMOS图像传感器的光电二极管的方法，以改善光电二极管中的电荷累积能力，其包括通过形成STI层来限定半导体衬底作为有源区和场区的步骤; 首先将用于形成光电二极管的杂质离子注入有源区的半导体衬底; 二次将用于形成光电二极管的杂质离子注入到与STI层相邻的半导体衬底上; 以及通过用热处理扩散注入的杂质离子形成光电二极管离子注入扩散层。

公开(公告)号：US20050104370A1

公开(公告)日：2005-05-19

申请号：US10788366

申请日：2004-03-01

Applicant: Hyung Kim ,  In Jeon ,  Sung Hur ,  Chun Chol ,  Byoung Kang

Inventor： Hyung Kim ,  In Jeon ,  Sung Hur ,  Chun Chol ,  Byoung Kang

IPC: F16L41/00 ,  F16L47/32 ,  F16L39/00

CPC classification number: F16L47/32

Abstract: A hose clamping assembly comprises a branched pipe having a plurality of projected stoppers thereon, each of the stoppers formed around an outer surface of each branch of the branched pipe and spaced apart a certain distance from each other, a hose connected to each branch of the branched pipe by sliding onto each of the branches, the hose contacting a nearest stopper from the end portion of the branch among the plurality of stoppers, a clamp formed on an outer surface of the hose and between the stoppers by a molding apparatus, a portion of the clamp on the outer surface of the hose connected to a portion of the clamp between the stoppers and an arm connecting the clamp to an adjacent clamp having a different axial direction, the arm formed by the molding apparatus.

Abstract translation: 软管夹紧组件包括分支管，其上具有多个突出的塞子，每个止动件形成在分支管的每个分支的外表面周围并彼此隔开一定距离，连接到 分支管通过滑动到每个分支上，软管接触来自多个止动件中的分支端部的最近的止动件，夹具形成在软管的外表面上，并通过模制装置形成在止动件之间，部分 所述夹具的外表面上的连接到所述夹持件的所述止动件的一部分之间的所述夹具，以及将所述夹具连接到具有不同轴向方向的相邻夹具的臂，所述臂由所述模制设备形成。