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56 条记录 (耗时 0.019 秒)

    Bonding P-type and N-type sheets to form complementary circuits
    11.
    发明授权
    Bonding P-type and N-type sheets to form complementary circuits 有权

    公开(公告)号：US09954033B2

    公开(公告)日：2018-04-24

    申请号：US15375118

    申请日：2016-12-11

    申请人： Polyera Corporation

    发明人： Hjalmar Edzer Ayco Huitema

    IPC分类号： H01L51/40 ,  H01L27/28 ,  H01L51/00 ,  H01L51/05 ,  H01L29/786

    CPC分类号： H01L27/283 ,  H01L27/281 ,  H01L27/286 ,  H01L29/78666 ,  H01L51/0024 ,  H01L51/0541

    摘要： A method for fabricating at least a portion of a complementary circuit, such as a complementary inverter circuit, includes fabricating a first sheet and a second sheet. Each of the sheets includes metal layers, a dielectric layer, and a semiconductor channel layer, configured so as to form a plurality of transistors of a respective polarity (i.e., P-type for one sheet, N-type for the other). The method also includes placing a layer of conductive material, such as anisotropic conducting glue (ACG) or anisotropic conducting foil (ACF), on the first sheet, and bonding at least a portion of the second sheet to the first sheet such that the conductive material is disposed between and in contact with the top-most metal layers of the first and second sheets. Separately fabricating the two sheets of different polarity may improve yields and/or decrease costs as compared to fabricating both polarities on a single substrate.

    Organic dielectric materials and devices including them
    18.
    发明授权
    Organic dielectric materials and devices including them 有权

    公开(公告)号：US11345778B2

    公开(公告)日：2022-05-31

    申请号：US16962760

    申请日：2019-01-21

    申请人： Flexterra, Inc.

    发明人： Shaofeng Lu ,  Antonio Facchetti ,  Mark Seger ,  Zhihua Chen ,  Yu Xia ,  Timothy Chiu ,  Joshua Lee Ayers

    IPC分类号： C08G61/08 ,  H01L51/05

    摘要： Disclosed are low-temperature thermally and/or ultraviolet light curable polymers that can be used as active and/or passive organic materials in various electronic, optical, and optoelectronic devices. In some embodiments, the device can include an organic semiconductor layer and a dielectric layer prepared from such low-temperature thermally and/or ultraviolet light curable polymers. In some embodiments, the device can include a passivation layer prepared from the low-temperature thermally and/or ultraviolet light curable polymers described herein. In certain embodiments, a polymer of the disclosure has a repeating unit having the structure (I) in which Q1-Q2 and Q3-Q4 are each independently —C(H)═C(H)— or (II) in which each n is independently selected from 1, 2, 3 and 4, and the polymer includes at least one repeating unit of Formula (I) wherein Q1-Q2 and Q3-Q4 is (II).

    A Thin-Film Transistor Comprising Organic Semiconductor Materials
    19.
    发明申请
    A Thin-Film Transistor Comprising Organic Semiconductor Materials 有权

    公开(公告)号：US20210257568A1

    公开(公告)日：2021-08-19

    申请号：US17275547

    申请日：2019-11-19

    申请人： Flexterra, Inc.

    发明人： Antonio Facchetti ,  Yu Xia ,  Zhihua Chen ,  Timothy Chiu ,  Shaofeng Lu

    IPC分类号： H01L51/05 ,  H01L51/00

    摘要： This invention relates to a thin-film transistor including, a dielectric layer having a first side and an opposed second side; a source electrode, a drain electrode separated from the source electrode, and a semiconductor component disposed between and in contact with the source electrode and the drain electrode, the source electrode, the drain electrode and the semiconductor component being disposed adjacent the first side of the dielectric layer; and a gate electrode disposed adjacent the second side of the dielectric layer opposite the semiconductor component; wherein the semiconductor component comprises one or more n-type organic semiconductor materials based on arene-bis(dicarboximide)s, and wherein the thin-film transistor has a channel length, measured as the shortest path from the source electrode to the drain electrode, of no more than 20 μm.