Abstract:
A method of analyzing ions adsorbed on a surface of a mask for pattern formation of a semiconductor device, and an apparatus using the same are disclosed. The ion analyzing method includes: filling a heating container within a main chamber with a predetermined amount of a solvent; immersing a mask in the solvent-filled heating container; raising an internal pressure of the chamber to a predetermined level by supplying gas into the chamber; separating ions from a surface of the mask by heating the solvent within the heating container at a predetermined temperature for a predetermined period; and analyzing the ions by collecting the solvent.
Abstract:
A composite material for a bipolar plate of fuel cells is comprised of conductive carbon dispersed in polybenzoxazine matrix. The present invention also provides a composite material for preparing a bipolar plate for fuel cells comprising a polymer where a volume reduction percent is less than 5%, preferably 3%, and more preferably 1% after polymerization of the monomers with respect to total volume of the monomers before the polymerization thereof, and conductive carbon. The polymers of the present invention have good workability since there is little volume change during polymerization, and good mechanical and chemical properties, and they can be manufactured at a low cost.
Abstract:
A scanner module and an image scanning apparatus employing the same. The scanner module comprises an illuminator for illuminating light on an object to be scanned. The illuminator includes a light emitting diode, a light guide extending in a main scanning direction to change a direction of the light received from the light emitting diode, and at least one elastic member to elastically support at least one longitudinal end of the light guide. As the light guide is elastically supported by the elastic member, convex deformation or bowing of an emission face of the light guide due to thermal expansion can be reduced.
Abstract:
Provided is a semiconductor package and method of manufacturing the same. The semiconductor package may include a semiconductor chip, an encapsulant encapsulating the semiconductor chip, a lead unit, and a partially encapsulated by the encapsulating thermal stress buffer which absorbs thermal stress of the semiconductor chip or the encapsulant.
Abstract:
The present invention discloses a network adapter which can allow an electric device which does not have a networking function to access various networks and perform a control operation. The network adapter includes a first interface for sending a sound/image signal to one electric device, a second interface for receiving a data from another electric device, a multimedia processing unit for converting the data into a sound/image signal, and a control processing unit for controlling the data received from another electric device to be converted into the sound/image signal and transmitted to one electric device, when the data is required to be converted into the sound/image signal.
Abstract:
A simulator for developing an acoustic detector of underwater vehicle precisely verifies performance of an acoustic detector by simulating an actual underwater environment, including target signal, applied to an underwater vehicle. The simulator an I/O communication unit for receiving information required for simulating an underwater environment from an acoustic detector and an motion simulator; a signal generator for receiving the information from the I/O communication unit to calculate a digital signal model; a D/A converter for converting the digital signal model into an analog signal; a signal conditioner for generating a signal similar to the signal of an actual underwater environment by controlling frequency and gain of the analog signal; and a remotely controlled computer for loading an OS to the signal generator and displaying various operation status.
Abstract:
A method of manufacturing a transistor of a semiconductor device is provided. The method includes forming an N type gate pattern and a P type gate pattern on a substrate, implanting N type impurities into an N type transistor area, forming an insulation layer on the substrate including the N type gate pattern, forming a first spacer on a sidewall of the P type gate pattern by partially etching the insulation layer in a P type transistor area, and implanting P type impurities into the P type gate pattern and into the P type transistor area, thereby forming a CMOS transistor on the substrate. Thus, damage to the substrate and the transistor is prevented, thereby improving electrical characteristics of the transistor.
Abstract:
A fuel cell system includes a reformer for generating hydrogen gas from fuel containing hydrogen using a chemical catalytic reaction and thermal energy. At least one electricity generator generates electrical energy by an electrochemical reaction of the hydrogen gas and oxygen. A fuel supply assembly supplies fuel to the reformer, and an oxygen supply assembly supplies oxygen to the at least one electricity generator. A heat exchanger is connected to the reformer and to the at least one electricity generator. The heat exchanger supplies thermal energy of the reformer, during initial operation of the system, to the at least one electricity generator so as to pre-heat the at least one electricity generator.
Abstract:
A fuel cell stack includes a generator that includes a membrane electrode assembly (MEA) that has opposing side surfaces, bipolar plates that are mounted to the side surfaces of the MEA, and a bar that is mounted to the generator by forming a rivet head on at least one end of the bar.
Abstract:
A separator for a fuel cell contains nano-graphite thin plates with a thickness of about 3 to 30 nm or clusters of the nano-graphite thin plates. As such, the separator is capable of providing enough electrical conductivity with only a small amount of graphite, is light in weight, and has sufficient mechanical characteristics due to increased binding of graphite to resin, excellent resistance, and excellent thermal stability due to a reduction in the thermal expansion coefficient.