公开(公告)号：US07336880B2

公开(公告)日：2008-02-26

申请号：US11142253

申请日：2005-06-02

Applicant: Isao Tsuruma

Inventor： Isao Tsuruma

IPC: G02B6/10 ,  G02F1/365 ,  G02F2/02

CPC classification number: G02F1/3775 ,  G02B6/1347 ,  G02F1/0316 ,  G02F2201/066

Abstract: A wavelength converting element is provided in which a fundamental wave with respect to an optical crystal substrate and a peak of a vertical transverse mode of a second harmonic are made to coincide, the converting efficiency is good, and a beam shape which enables good joining to a lens or an optical fiber is obtained. Given that an angle formed by a surface of the optical crystal substrate and a C axis of the optical crystal substrate is θ, a period at which inverted domains are formed is p, and a distance from a distal end of a comb-shaped electrode for forming the inverted domain to a central position of a waveguide is G, in the ion implantation, a concentration peak of the ion implantation is formed at a distance of substantially (G·tan θ+p/4) from the surface of the optical crystal substrate.

Abstract translation: 提供一种波长转换元件，其中使相对于光学晶体基板的基波和二次谐波的垂直横向模式的峰值一致，转换效率良好，并且能够良好地接合到 获得透镜或光纤。 假设由光学晶体基板的表面和光学晶体基板的C轴形成的角度为θ，则形成反转畴的周期为p，并且与梳状电极的远端的距离为 在波导的中心位置处形成反向域为G，在离子注入中离子注入的浓度峰值形成在与光学晶体表面​​基本上（G.tanθ+ p / 4）的距离处 基质。

公开(公告)号：US07071492B2

公开(公告)日：2006-07-04

申请号：US10609839

申请日：2003-06-30

Applicant: Ruolin Li ,  Ut Tran

Inventor： Ruolin Li ,  Ut Tran

IPC: H01L27/15

CPC classification number: G02F1/065 ,  G02F1/0147 ,  G02F2201/066

Abstract: A polymer well may be formed over a thermal oxide formed over a semiconductor substrate in one embodiment. The well may include a waveguide and a pair of heaters adjacent the waveguide. Each heater may be mounted on a platform of insulating material to reduce heat loss through the substrate and the thermal oxide, in one embodiment.

Abstract translation: 在一个实施例中，聚合物阱可以形成在半导体衬底上形成的热氧化物上。 阱可以包括波导和邻近波导的一对加热器。 在一个实施例中，每个加热器可以安装在绝缘材料的平台上，以减少通过基底和热氧化物的热损失。

公开(公告)号：US06999638B2

公开(公告)日：2006-02-14

申请号：US10112938

申请日：2002-04-02

Applicant: Koji Yamada

Inventor： Koji Yamada

IPC: G02F1/035

CPC classification number: B82Y20/00 ,  G02B6/1228 ,  G02F1/01708 ,  G02F1/025 ,  G02F2001/0155 ,  G02F2201/066

Abstract: A semiconductor waveguide device includes a lower clad layer, an upper clad layer, an optical waveguide layer interposed between the lower clad layer and the upper clad layer, and a lower electrode and an upper electrode for applying a voltage to a laminated structure including the lower clad layer, the optical waveguide layer, and the upper clad layer. Light is made incident from an end face of the optical waveguide layer. The upper clad layer includes a stripe-like width-narrowed portion, and a width-broadened portion formed at a position closer to a light-incident end face than the width-narrowed portion and having a width wider than the width-narrowed portion.

公开(公告)号：US06798552B2

公开(公告)日：2004-09-28

申请号：US10197559

申请日：2002-07-18

Applicant: Hitoshi Tada

Inventor： Hitoshi Tada

IPC: G02F103

CPC classification number: B82Y20/00 ,  G02F1/01708 ,  G02F1/025 ,  G02F2201/066 ,  G02F2201/07

Abstract: A band discontinuity reduction layer having a band gap energy larger than that of that of an MQW (multiple quantum well) absorption layer and smaller than that of a p-InP clad layer is provided between the MQW absorption layer and the p-InP clad layer. In addition, a band discontinuity reduction layer having a band gap energy larger than that of the MQW absorption layer and smaller than that of an n-InP clad layer is provided between the MQW absorption layer and the n-InP clad layer. Consequently, as a pile-up of carriers is suppressed, a semiconductor light modulator with an enhanced response speed can be obtained.

Abstract translation: 在MQW吸收层和p-InP覆盖层之间提供具有比MQW（多量子阱）吸收层的带隙能量大的带隙能量并且小于p-InP覆盖层的带隙能量的带间断层， 。 此外，在MQW吸收层和n-InP覆盖层之间设置有具有比MQW吸收层的带隙能量大的带隙能量并且小于n-InP覆盖层的带隙能量减少层。 因此，随着载流子的堆积被抑制，可以获得具有增强的响应速度的半导体光调制器。

公开(公告)号：US06795234B2

公开(公告)日：2004-09-21

申请号：US09985092

申请日：2001-11-01

Applicant: Isao Tsuruma

Inventor： Isao Tsuruma

IPC: G02F1365

CPC classification number: B82Y20/00 ,  G02F1/3556 ,  G02F2201/066

Abstract: A wavelength converting element having improved wavelength converting efficiency and having a beam shape which facilitates coupling to a fiber or the like, is manufactured at low cost. After a waveguide is formed by carrying out proton exchange at a lower substrate in which inverted domains are formed, an upper substrate is laminated to the lower substrate so as to oppose the waveguide. Thereafter, a heat treatment is carried out and protons diffuse into the upper substrate and the lower substrate such that the waveguide is made to be a waveguide whose refractive index distribution is symmetrical, and simultaneously, the upper substrate and the lower substrate are joined by the heat treatment.

Abstract translation: 以低成本制造具有提高的波长转换效率并且具有促进与纤维等的耦合的光束形状的波长转换元件。 在通过在其中形成反向域的下基板处进行质子交换而形成波导之后，将上基板层叠到下基板上以与波导相对。 此后，进行热处理，并且质子扩散到上基板和下基板中，使得波导被制成折射率分布对称的波导，同时，上基板和下基板通过 热处理。

公开(公告)号：US06661557B2

公开(公告)日：2003-12-09

申请号：US10302222

申请日：2002-11-22

Applicant: Tsuyoshi Kouchi ,  Takashi Mitsuma

Inventor： Tsuyoshi Kouchi ,  Takashi Mitsuma

IPC: G02F103

CPC classification number: G02F1/025 ,  G02F2201/066 ,  G02F2201/07

Abstract: There is provided an optical modulator in which positive holes produced in the valence band are not piled up, the electrostatic capacity can be decreased, the frequency response characteristic is improved, and which is capable of operating at a high speed. In an optical modulator comprising: an n-type clad layer; a stripe-like modulation layer elongated in the direction of light propagation and formed on the top surface of the n-type clad layer; a buffer layer formed on the top surface of the modulation layer; and a p-type clad layer formed on the top surface of the buffer layer, the buffer layer has its composition the band gap energy of which is higher by an energy due to a p-type acceptor level than that of the modulation layer, thereby to remove a difference in band gap energy between the modulation layer and the buffer layer.

公开(公告)号：US20030147584A1

公开(公告)日：2003-08-07

申请号：US10226309

申请日：2002-08-23

Applicant: Hitachi, Ltd.

Inventor： Mitsutoshi Honda ,  Takashi Naito ,  Tatsuya Sugita ,  Masahiko Ando

IPC: G02B006/26 ,  G02F001/295

CPC classification number: G02F1/3515 ,  G02F2201/066

Abstract: An optical switch includes at least one light-receiving core for receiving an optical signal, a plurality of light-emitting cores which are used selectively for emitting the optical signal, and a plurality of waveguides connecting the light-receiving core and the plurality of light-emitting cores. A nonlinear optical element which, when pumped, changes its refractive index by 2% or above relative to the surroundings to control a traveling direction of the optical signal is disposed near at least one of the plurality of waveguides.

Abstract translation: 光开关包括用于接收光信号的至少一个光接收芯，用于选择性地发射光信号的多个发光芯，以及连接光接收芯和多个光的多个波导 发射核心。 一种非线性光学元件，当被泵送时，其折射率相对于周围环境改变2％或更高，以控制光信号的行进方向设置在多个波导中的至少一个波导附近。

公开(公告)号：US20030025986A1

公开(公告)日：2003-02-06

申请号：US09896953

申请日：2001-06-29

Applicant: HRL Laboratories, LLC

Inventor： Stanislav I. Ionov

IPC: G02F001/295 ,  G03H001/10 ,  G02F001/29

CPC classification number: G02F1/011 ,  G02F2201/066 ,  G02F2201/20 ,  G02F2201/302 ,  G02F2201/307 ,  G02F2202/20

Abstract: An optical delay generator comprises a first waveguide made from electro-optically active material resonantly coupled to a second non-electro-optically active waveguide. The first waveguide contains a chirped distributed Bragg reflector structure which reflects optical signals at a specific wavelength at a specific reflection point within the structure. An electric field applied to the first waveguide changes the refractive index of the electro-optically active material and thus shifts the reflection point. Optical signals reflecting from the reflection point are resonantly coupled into the second waveguide, and are thus not affected by the electric field applied to the first waveguide. The controllable optical delay applied to the optical signals results from control over the reflection point and the round-trip travel time for an optical signal forward propagating in the first waveguide, being reflected at the reflection point, and backward propagating in the second waveguide.

公开(公告)号：US20020054425A1

公开(公告)日：2002-05-09

申请号：US09983057

申请日：2001-10-23

Applicant: FUJI PHOTO FILM CO., LTD.

Inventor： Isao Tsuruma

IPC: G02F001/365 ,  G02B006/10

CPC classification number: G02F1/3775 ,  G02B6/1347 ,  G02F1/0316 ,  G02F2201/066

Abstract: A wavelength converting element is provided in which a fundamental wave with respect to an optical crystal substrate and a peak of a vertical transverse mode of a second harmonic are made to coincide, the converting efficiency is good, and a beam shape which enables good joining to a lens or an optical fiber is obtained. Given that an angle formed by a surface of the optical crystal substrate and a C axis of the optical crystal substrate is null, a period at which inverted domains are formed is p, and a distance from a distal end of a comb-shaped electrode for forming the inverted domain to a central position of a waveguide is G, in the ion implantation, a concentration peak of the ion implantation is formed at a distance of substantially (Gnulltan nullnullp/4) from the surface of the optical crystal substrate.

Abstract translation: 提供一种波长转换元件，其中使相对于光学晶体基板的基波和二次谐波的垂直横向模式的峰值一致，转换效率良好，并且能够良好地接合到 获得透镜或光纤。 假设由光学晶体基板的表面和光学晶体基板的C轴形成的角度为θ，则形成反转畴的周期为p，并且与梳状电极的远端的距离为 在波导的中心位置处形成反向域为G，在离子注入中离子注入的浓度峰值形成在与光学晶体表面​​基本上（G.tanθ+ p / 4）的距离处 基质。

公开(公告)号：US06384955B2

公开(公告)日：2002-05-07

申请号：US09839120

申请日：2001-04-23

Applicant: Hitoshi Tada ,  Tomoko Kadowaki

Inventor： Hitoshi Tada ,  Tomoko Kadowaki

IPC: G02F103

CPC classification number: G02F1/025 ,  G02F2201/066 ,  G02F2201/122

Abstract: A light modulator includes a semiconductor substrate having a main surface, a rear surface, and a grounding conductor on the rear surface. A wave guide section having a width is located on the semiconductor substrate. A bonding pad section on the semiconductor substrate is located adjacent to the wave guide section and an insulating layer covers the main surface of the semiconductor substrate. A portion of the insulating layer immediately opposite the bonding pad section includes a multiple layer structure of insulating films. An electrode opposite the bonding pad section is electrically connected to the wave guide section.

Abstract translation: 光调制器包括在后表面上具有主表面，后表面和接地导体的半导体衬底。 具有宽度的波导部分位于半导体衬底上。 半导体衬底上的接合焊盘部分位于波导部分附近，并且绝缘层覆盖半导体衬底的主表面。 与接合焊盘部分相对的绝缘层的一部分包括绝缘膜的多层结构。 与接合焊盘部分相对的电极电连接到波导部分。