公开(公告)号：US07126690B2

公开(公告)日：2006-10-24

申请号：US10659626

申请日：2003-09-10

Applicant: Jon Opsal ,  Lena Nicolaides ,  Alex Salnik ,  Allan Rosencwaig

Inventor： Jon Opsal ,  Lena Nicolaides ,  Alex Salnik ,  Allan Rosencwaig

IPC: G01N21/55

CPC classification number: G01N21/636 ,  G01N21/1717

Abstract: A modulated reflectance measurement system includes lasers for generating an intensity modulated pump beam and a UV probe beam. The pump and probe beams are focused on a measurement site within a sample. The pump beam periodically excites the measurement site and the modulation is imparted to the probe beam. For one embodiment, the wavelength of the probe beam is selected to correspond to a local maxima of the temperature reflectance coefficient of the sample. For a second embodiment, the probe laser is tuned to either minimize the thermal wave contribution to the probe beam modulation or to equalize the thermal and plasma wave contributions to the probe beam modulation.

Abstract translation: 调制反射测量系统包括用于产生强度调制泵浦光束和UV探测光束的激光器。 泵和探针光束聚焦在样品内的测量位置。 泵浦光束周期性地激发测量位置，并且调制被赋予探测光束。 对于一个实施例，选择探针光束的波长以对应于样品的温度反射系数的局部最大值。 对于第二实施例，探针激光器被调谐以使对热探测波束调制的热波贡献最小化，或者使得等离子体波对探测光束调制的贡献均衡。

公开(公告)号：US20060167651A1

公开(公告)日：2006-07-27

申请号：US11043196

申请日：2005-01-26

Applicant: Shahin Zangooie ,  Youxian Wen ,  Heath Pois ,  Jon Opsal

Inventor： Shahin Zangooie ,  Youxian Wen ,  Heath Pois ,  Jon Opsal

IPC: G06F17/18

CPC classification number: G01B11/0625 ,  G05B13/024 ,  G05B15/02

Abstract: Measurement data sets for optical metrology systems can be processed in parallel using Multiple Tool and Structure Analysis (MTSA). In an MTSA procedure, at least one parameter that is common to the data sets can be coupled as a global parameter. Setting this parameter as global allows a regression on each data set to contain fewer fitting parameters, making the process is less complex, requiring less processing capacity, and providing more accurate results. MTSA can analyze multiple structures measured on a single tool, or a single structure measured on separate tools. For a multiple tool recipe, a minimized regression solution can be applied back to each tool to determine whether the recipe is optimized. If the recipe does not provide accurate results for each tool, search parameters and/or spaces can be modified in an iterative manner until an optimized solution is obtained that provides acceptable solutions on each tool.

公开(公告)号：US20060103844A1

公开(公告)日：2006-05-18

申请号：US11269204

申请日：2005-11-08

Applicant: Jon Opsal

Inventor： Jon Opsal

IPC: G01J4/00

CPC classification number: G01J4/04 ,  G01N21/211

Abstract: An optical inspection device includes a light source for generating a probe beam. The probe beam is focused onto a sample to create a spread of angles of incidence. After reflecting from the sample, the light is imaged onto a two dimensional array of photodetectors. Prior to reaching the detector array, the beam is passed through a rotating compensator. A processor functions to evaluate the sample by analyzing the output of the photodetectors lying along one or more azimuthal angles and at different compensator positions.

Abstract translation: 光学检查装置包括用于产生探测光束的光源。 探测光束被聚焦到样品上以产生入射角的扩展。 从样品反射后，将光成像到二维阵列的光电探测器上。 在到达检测器阵列之前，光束通过旋转补偿器。 处理器用于通过分析沿着一个或多个方位角并且处于不同补偿器位置的光电探测器的输出来评估样本。

公开(公告)号：US07031848B2

公开(公告)日：2006-04-18

申请号：US11177699

申请日：2005-07-08

Applicant: Jon Opsal ,  Hanyou Chu

Inventor： Jon Opsal ,  Hanyou Chu

IPC: G06F17/00

CPC classification number: G03F7/70616 ,  G01B11/24 ,  G01N21/211 ,  G03F7/705 ,  G03F7/70625

Abstract: A system for characterizing geometric structures formed on a sample on a real time basis is disclosed. A multi-parameter measurement module generates output signals as a function of either wavelength or angle of incidence. The output signals are supplied to a parallel processor. The processor creates an initial theoretical model and then calculates the theoretical optical response of that sample. The calculated optical response is compared to measured values. Based on the comparison, the model configuration is modified to be closer to the actual measured structure. The processor recalculates the optical response of the modified model and compares the result to the measured data. This process is repeated in an iterative manner until a best fit is achieved. The steps of calculating the optical response of the model is distributed to the processors as a function of wavelength or angle of incidence so these calculations can be performed in parallel.

Abstract translation: 公开了一种在实时基础上表征样品上形成的几何结构的系统。 多参数测量模块产生作为波长或入射角的函数的输出信号。 输出信号被提供给并行处理器。 处理器创建一个初始理论模型，然后计算该样本的理论光学响应。 将计算出的光学响应与测量值进行比较。 基于比较，模型配置被修改为更接近实际的测量结构。 处理器重新计算修改模型的光学响应，并将结果与​​测量数据进行比较。 以迭代的方式重复该过程，直到达到最佳拟合。 计算模型的光学响应的​​步骤作为波长或入射角分布到处理器，因此可以并行执行这些计算。

公开(公告)号：US06989899B2

公开(公告)日：2006-01-24

申请号：US10387259

申请日：2003-03-12

Applicant: Alex Salnik ,  Lena Nicolaides ,  Jon Opsal

Inventor： Alex Salnik ,  Lena Nicolaides ,  Jon Opsal

IPC: G01N21/00 ,  G01N21/55

CPC classification number: G01N21/276 ,  G01N21/1717 ,  G01N21/55 ,  G01N2021/3568

Abstract: A method for simultaneously monitoring ion implantation dose, damage and/or dopant depth profiles in ion-implanted semiconductors includes a calibration step where the photo-modulated reflectance of a known damage profile is identified in I-Q space. In a following measurement step, the photo-modulated reflectance of a subject is empirically measured to obtain in-phase and quadrature values. The in-phase and quadrature values are then compared, in I-Q space, to the known damage profile to characterize the damage profile of the subject.

Abstract translation: 在离子注入的半导体中同时监测离子注入剂量，损伤和/或掺杂剂深度分布的方法包括校准步骤，其中在I-Q空间中识别已知损伤谱的光调制反射率。 在随后的测量步骤中，经验地测量受试者的光调制反射率以获得同相和正交值。 然后在I-Q空间中将同相和正交值与已知的损伤特征进行比较，以表征受试者的损伤特征。

公开(公告)号：US06934025B2

公开(公告)日：2005-08-23

申请号：US10839049

申请日：2004-05-05

Applicant: Jon Opsal ,  Jeffrey T. Fanton ,  Craig Uhrich

Inventor： Jon Opsal ,  Jeffrey T. Fanton ,  Craig Uhrich

IPC: G01B11/06 ,  G01J4/00 ,  G01N21/21

CPC classification number: G01B11/0641 ,  G01J4/00 ,  G01N21/211

Abstract: An optical measurement system for evaluating a reference sample, having at least a partially known composition, includes a reference ellipsometer and at least one non-contact optical measurement device. The ellipsometer includes a light generator, an analyzer, and a detector. The light generator generates a beam of quasi-monochromatic light of known wavelength and polarization, which is directed at a non-normal angle of incidence relative to the reference sample. The analyzer creates interference between S and P polarized components in the beam after interaction with the sample. The detector then measures the intensity of the beam, which a processor uses to determine the polarization state of the beam and, subsequently, an optical property of the reference sample. The processor then can calibrate an optical measurement device by comparing a measured optical parameter from the optical measurement device to the determined optical property from the reference ellipsometer.

Abstract translation: 用于评估具有至少部分已知组成的参考样品的光学测量系统包括参考椭偏仪和至少一个非接触式光学测量装置。 椭偏仪包括光发生器，分析器和检测器。 光发生器产生已知波长和极化的准单色光束，其被引导到相对于参考样本的非正常入射角。 分析仪在与样品相互作用后，在光束中产生S和P偏振分量之间的干扰。 然后，检测器测量光束的强度，处理器用于确定光束的偏振状态，随后测量参考样品的光学特性。 然后，处理器可以通过将来自光学测量装置的测量光学参数与来自参考椭偏仪的所确定的光学特性进行比较来校准光学测量装置。

公开(公告)号：US20050057760A1

公开(公告)日：2005-03-17

申请号：US10973703

申请日：2004-10-26

Applicant: Jon Opsal ,  Allan Rosencwaig

Inventor： Jon Opsal ,  Allan Rosencwaig

IPC: G01B11/02 ,  G01B11/14

CPC classification number: G01B11/024 ,  G01B11/02 ,  G01B11/14 ,  G03F7/70625

Abstract: A method and apparatus are disclosed for evaluating relatively small periodic structures formed on semiconductor samples. In this approach, a light source generates a probe beam which is directed to the sample. In one preferred embodiment, an incoherent light source is used. A lens is used to focus the probe beam on the sample in a manner so that rays within the probe beam create a spread of angles of incidence. The size of the probe beam spot on the sample is larger than the spacing between the features of the periodic structure so some of the light is scattered from the structure. A detector is provided for monitoring the reflected and scattered light. The detector includes multiple detector elements arranged so that multiple output signals are generated simultaneously and correspond to multiple angles of incidence. The output signals are supplied to a processor which analyzes the signals according to a scattering model which permits evaluation of the geometry of the periodic structure. In one embodiment, the sample is scanned with respect to the probe beam and output signals are generated as a function of position of the probe beam spot.

公开(公告)号：US06859281B2

公开(公告)日：2005-02-22

申请号：US10689332

申请日：2003-10-20

Applicant: Minna Hovinen ,  Jon Opsal

Inventor： Minna Hovinen ,  Jon Opsal

IPC: G01N21/17 ,  G01N21/21 ,  G01N21/41

CPC classification number: G01N21/211 ,  G01N21/171

Abstract: A method is disclosed for measuring the dose and energy level of ion implants forming a shallow junction in a semiconductor sample. In the method, two independent measurements of the sample are made. The first measurement monitors the response of the sample to periodic excitation. In the illustrated embodiment, the modulated optical reflectivity of a reflected probe beam is monitored to provide information related to the generation of thermal and/or plasma waves in the sample. A second spectroscopic measurement is also performed. This measurement could be either a spectroscopic reflectometry measurement or a spectroscopic ellipsometry measurement. The data from the two measurements are combined in a manner to yield information about both the dose (concentration) of the dopants as well as the energy used to inject the dopants in the semiconductor lattice. The method will useful in controlling the formation of shallow junctions.

Abstract translation: 公开了一种用于测量在半导体样品中形成浅结的离子植入物的剂量和能量水平的方法。 在该方法中，进行样品的两次独立测量。 第一个测量监测样品对周期性激发的响应。 在所示实施例中，监测反射探测光束的调制光学反射率，以提供与样品中的热和/或等离子体波的产生有关的信息。 还进行第二光谱测量。 该测量可以是光谱反射测量或光谱椭偏仪测量。 以这种方式组合来自两个测量的数据以产生关于掺杂剂的剂量（浓度）以及用于在半导体晶格中注入掺杂剂的能量的信息。 该方法将有助于控制浅结的形成。

公开(公告)号：US06856385B2

公开(公告)日：2005-02-15

申请号：US10400369

申请日：2003-03-27

Applicant: Lanhua Wei ,  Hanyou Chu ,  Jon Opsal

Inventor： Lanhua Wei ,  Hanyou Chu ,  Jon Opsal

IPC: G01B11/06 ,  G01J4/04 ,  G01N21/00 ,  G01N21/21 ,  G01N21/95 ,  H01L21/66 ,  G01J4/00 ,  G01N21/55

CPC classification number: G01N21/211 ,  G01B11/065 ,  G01N21/9501 ,  H01L22/12

Abstract: This invention relates to optical metrology tools that are used to evaluate small measurement areas on a semiconductor wafer, where the measurement area is surrounded by a material different from the measurement area. In one embodiment, a probe beam is scanned over the measurement area and the surrounding material as data is taken at multiple locations. A processor determines the characteristics of the measurement area by identifying an extremum value of the measurements which represents the center of the measurement area. In another embodiment, the processor determines the characteristics of the sample using a combination of light measured from within and without the measurement area. The measured data is treated as a combination of light from both regions and mathematically modeled to account for both the contribution of the light reflected from the measurement area and the light reflected from the surrounding material.

Abstract translation: 本发明涉及光学测量工具，其用于评估半导体晶片上的小测量区域，其中测量区域由与测量区域不同的材料包围。 在一个实施例中，当数据在多个位置拍摄时，探测光束被扫描在测量区域和周围的材料上。 处理器通过识别表示测量区域的中心的测量值的极值来确定测量区域的特性。 在另一个实施例中，处理器使用从内部和不具有测量区域测量的光的组合来确定样本的特性。 测量数据被视为来自两个区域的光的组合，并且通过数学建模来考虑从测量区域反射的光的贡献和从周围材料反射的光的贡献。

公开(公告)号：US06836328B2

公开(公告)日：2004-12-28

申请号：US10696269

申请日：2003-10-29

Applicant: Jon Opsal

Inventor： Jon Opsal

IPC: G01B1106

CPC classification number: G01B11/0641 ,  G01J4/04 ,  G01N21/211 ,  G01N2021/213

Abstract: An apparatus is disclosed for obtaining ellipsometric measurements from a sample. A probe beam is focused onto the sample to create a spread of angles of incidence. The beam is passed through a quarter waveplate retarder and a polarizer. The reflected beam is measured by a detector. In one preferred embodiment, the detector includes eight radially arranged segments, each segment generating an output which represents an integration of multiple angle of incidence. A processor manipulates the output from the various segments to derive ellipsometric information.