公开(公告)号：US5483074A

公开(公告)日：1996-01-09

申请号：US371286

申请日：1995-01-11

Applicant: Richard B. True

Inventor： Richard B. True

IPC: H01J3/02 ,  H01J33/00 ,  H01J37/063

CPC classification number: H01J33/00 ,  H01J3/027 ,  H01J37/063

Abstract: A flood beam electron gun is provided for use in remediation of hazardous volatile organic compounds (VOC) contained within a detoxification vessel. The flood beam electron gun comprises an electron emitter having a rounded emitting surface providing a conical electron beam. A control grid is spaced from and disposed substantially parallel to the emitting surface. The control grid has a plurality of holes disposed in a first pattern providing an array of individual electron beams from the conical electron beam of the emitter. An intermediate electrode is spaced from the emitter and the control grid, and has an aperture therethrough providing a substantially parallel flow of the array of individual electron beams. A target grid is spaced from the intermediate electrode and opposite from the cathode and control grid. The target grid has a plurality of holes disposed in a second pattern that is proportional to and substantially larger than the first pattern. Each of the individual electron beams pass through respective ones of the plurality of holes in registration thereof. A vacuum barrier is provided on a downstream side of the target grid to separate the electron gun from the vessel. The individual electron beams pass through the vacuum barrier into the vessel. Within the vessel, the electrons of the individual beams impact the VOCs, converting the VOCs to less hazardous organic compounds.

Abstract translation: 提供了一种泛光束电子枪，用于修复排毒容器内含有的有害挥发性有机化合物（VOC）。 泛光束电子枪包括具有提供锥形电子束的圆形发射表面的电子发射器。 控制栅格与发射表面基本平行地间隔开并且被设置成基本上平行于发射表面。 控制栅格具有设置在第一图案中的多个孔，从发射器的锥形电子束提供单独的电子束阵列。 中间电极与发射器和控制栅极间隔开，并且具有通孔，其提供单独电子束阵列的基本上平行的流动。 目标网格与中间电极间隔开并与阴极和控制栅极相对。 目标栅格具有以与第一图案成比例并且基本上大于第一图案的第二图案布置的多个孔。 每个单独的电子束通过其对准的多个孔中的相应的一个。 在目标栅格的下游侧设置真空阻挡层，以将电子枪与容器分离。 各个电子束通过真空屏障进入容器。 在容器内，单个梁的电子影响VOC，将VOC转化为危害较小的有机化合物。

公开(公告)号：US5446687A

公开(公告)日：1995-08-29

申请号：US188828

申请日：1994-01-31

Applicant: Thomas D. Hurt ,  Scott A. Halpine

Inventor： Thomas D. Hurt ,  Scott A. Halpine

IPC: G11B5/00 ,  G11B5/64 ,  G11B9/10 ,  G11B11/11 ,  G11B11/115 ,  G11B13/04 ,  G11B19/04 ,  G11B20/18 ,  G11B23/28 ,  G11C11/02 ,  G11C11/23 ,  H01J3/02 ,  G11C13/04

CPC classification number: G11B5/65 ,  G11B11/11 ,  G11B11/115 ,  G11B19/04 ,  G11B20/1883 ,  G11B23/28 ,  G11B5/00 ,  G11B5/64 ,  G11B5/653 ,  G11B5/656 ,  G11B9/10 ,  G11C11/02 ,  G11C11/23 ,  H01J3/02 ,  G11B13/045 ,  H01J2203/0296 ,  H01J2237/06383

Abstract: A data storage medium comprising a substrate and a data storage layer formed on the substrate. The data storage layer comprises a fixed number of atomic layers of a magnetic material which provide the data storage layer with a magnetic anisotropy perpendicular to a surface of the data storage layer. A data magnetic field is created in the data storage layer. The data magnetic field is polarized either in a first direction corresponding to a first data value or in a second direction corresponding to a second data value. Data is stored in the data storage layer by providing a spin-polarized electron having an electron magnetic field with a direction of polarization corresponding to one of the first and the second data values, and directing the spin-polarized electron at the data magnetic field to impart the direction of polarization of the electron magnetic field to the data magnetic field. Data is read from the data storage layer by directing the spin-polarized electron at the data magnetic field and detecting a deflection or attraction of the spin-polarized electron by the data magnetic field. Alternatively, data is read from the data storage layer by directing the spin-polarized electron at the data magnetic field so that the magnetic medium produces a secondary electron and then detecting certain characteristics of the secondary electron.

Abstract translation: 一种数据存储介质，包括形成在基板上的基板和数据存储层。 数据存储层包括固定数量的磁性材料的原子层，为数据存储层提供垂直于数据存储层表面的磁各向异性。 在数据存储层中创建数据磁场。 数据磁场在对应于第一数据值的第一方向或对应于第二数据值的第二方向上被极化。 通过提供具有电子磁场的自旋极化电子将数据存储在数据存储层中，该电子磁场具有对应于第一和第二数据值之一的极化方向，并将数据磁场的自旋极化电子引导到 将电子磁场的极化方向赋予数据磁场。 通过在数据磁场处引导自旋极化电子并通过数据磁场检测自旋极化电子的偏转或吸引，从数据存储层读取数据。 或者，通过将自旋极化电子指向数据磁场，从数据存储层读取数据，使得磁介质产生二次电子，然后检测二次电子的某些特性。

公开(公告)号：US5416381A

公开(公告)日：1995-05-16

申请号：US101161

申请日：1993-08-03

Applicant: Raymond D. Scarpetti, Jr. ,  Clarence D. Parkison ,  Vernon A. Switzer ,  Young J. Lee ,  William C. Sawyer

Inventor： Raymond D. Scarpetti, Jr. ,  Clarence D. Parkison ,  Vernon A. Switzer ,  Young J. Lee ,  William C. Sawyer

IPC: H01J3/02 ,  H01J37/065 ,  H01J29/46

CPC classification number: H01J37/065 ,  H01J3/027 ,  H01J2237/062

Abstract: A compact, high power electron gun having enhanced thermal and mechanical stability which incorporates a mechanically coupled, self aligning structure for the anode and cathode. The enhanced stability, and reduced need for realignment of the cathode to the anode and downstream optics during operation are achieved by use of a common support structure for the cathode and anode which requires no adjustment screws or spacers. The electron gun of the present invention also incorporates a modular design for the cathode, in which the electron emitter, its support structure, and the hardware required to attach the emitter assembly to the rest of the gun are a single element. This modular design makes replacement of the emitter simpler and requires no realignment after a new emitter has been installed. Compactness and a reduction in the possibility of high voltage breakdown are achieved by shielding the "triple point" where the electrode, insulator, and vacuum meet. The use of electric discharge machining (EDM) for fabricating the emitter allows for the accurate machining of the emitter into intricate shapes without encountering the normal stresses developed by standard emitter fabrication techniques.

Abstract translation: 具有增强的热和机械稳定性的紧凑型高功率电子枪，其结合用于阳极和阴极的机械耦合的自对准结构。 通过使用阴极和阳极的公共支撑结构，不需要调节螺钉或间隔件，可以实现增强的稳定性和减少阴极重新对准阳极和下游光学器件的需要。 本发明的电子枪还包括用于阴极的模块化设计，其中电子发射器，其支撑结构以及将发射器组件附接到枪的其余部分所需的硬件是单个元件。 这种模块化设计使得更简单的发射器更换，并且在安装新的发射器后不需要重新对准。 通过屏蔽电极，绝缘体和真空相遇的“三点”来实现紧凑性和降低高压击穿可能性。 使用放电加工（EDM）制造发射极允许将发射极精确地加工成复杂的形状，而不会遇到由标准发射极制造技术产生的法向应力。

公开(公告)号：US5396150A

公开(公告)日：1995-03-07

申请号：US84484

申请日：1993-07-01

Applicant: Biing-Seng Wu ,  Jammy C.-M. Huang

Inventor： Biing-Seng Wu ,  Jammy C.-M. Huang

IPC: H01J3/02 ,  H01J9/02 ,  H01J1/30

CPC classification number: H01J3/022 ,  H01J9/025 ,  H01J2201/319 ,  H01J2329/00

Abstract: A high resolution matrix addressed flat panel display having single field emission microtip redundancy is formed. A dielectric base substrate is provided. Parallel, spaced conductors acting as cathode columns for the display are formed upon the substrate. A layer of insulation is located over the cathode columns. Parallel, spaced conductors acting as gate lines for the display is formed over the layer of insulation at a right angle to the cathode columns. The intersections of the cathode columns and gate lines are the pixels of the display. A plurality of openings at the pixels extend through the insulating layer and gate lines. At each of the pixels are a plurality of field emission microtips connected to and extending up from the cathode conductor columns and into the plurality of openings. There is a circular resistive layer surrounding each of the field emission microtips to obtain emission uniformity by sustaining the cathode to gate voltage.

Abstract translation: 形成具有单场发射微尖头冗余的高分辨率矩阵寻址平板显示器。 提供介电基底基板。 作为显示器的阴极柱的平行，间隔的导体形成在基板上。 绝缘层位于阴极柱之上。 作为显示器的栅极线的平行的隔开的导体以与阴极柱成直角的绝缘层形成。 阴极柱和栅极线的交点是显示器的像素。 像素处的多个开口延伸穿过绝缘层和栅极线。 在每个像素处是连接到阴极导体柱并且向上延伸到多个开口中的多个场发射微尖端。 围绕每个场发射微尖端的圆形电阻层通过将阴极维持在栅极电压来获得发射均匀性。

公开(公告)号：US5394006A

公开(公告)日：1995-02-28

申请号：US177521

申请日：1994-01-04

Applicant: David N.-C. Liu

Inventor： David N.-C. Liu

IPC: H01J3/02 ,  H01J9/02 ,  B44C1/22 ,  C23F1/02 ,  H01L31/00

CPC classification number: H01J3/022 ,  H01J9/025

Abstract: A method of forming a self-aligned gated field emitter with reduced gate opening and uniform gate height, on a substrate, is described. A field emitter is formed on the substrate. A thin, conformal dielectric layer is formed over the field emitter and the substrate. A thick dielectric layer is formed over the thin, conformal dielectric layer. The thick dielectric layer is planarized. The thick dielectric layer is etched back. A conductive layer is formed over the thick dielectric layer. The conductive layer is planarized and then etched back. The field emitter is exposed by forming an opening in the conductive layer, by removing the portion of the thin, conformal dielectric layer above and around the top of the field emitter.

Abstract translation: 描述了在衬底上形成具有减小的栅极开口和均匀栅极高度的自对准栅控场致发射体的方法。 在基板上形成场致发射体。 在场致发射体和衬底上形成薄的保形介电层。 在薄的共形介电层上形成厚的介电层。 厚电介质层被平坦化。 厚电介质层被回蚀。 导电层形成在厚电介质层上。 导电层被平坦化，然后被回蚀。 通过在场致发射体的顶部和周围去除薄的共形绝缘层的部分，在导电层中形成开口来暴露场发射体。

公开(公告)号：US5382867A

公开(公告)日：1995-01-17

申请号：US954396

申请日：1992-09-30

Applicant: Marou Yuji ,  Akagi Yutaka ,  Ise Tomokazu ,  Urayama Masao

Inventor： Marou Yuji ,  Akagi Yutaka ,  Ise Tomokazu ,  Urayama Masao

IPC: H01J1/30 ,  H01J1/304 ,  H01J3/02 ,  H01J21/10 ,  H01J1/02

CPC classification number: H01J3/022 ,  H01J1/30 ,  H01J1/3042 ,  H01J21/105 ,  H01J3/021

Abstract: A field-emission electronic device works as a field-emission electron source. The field-emission electronic device comprises an anode electrode, a first insulating member disposed on the anode electrode, a cathode electrode disposed on the first insulating member, a second insulating member disposed on the anode electrode at a distance from the first insulating member, and a gate electrode disposed on the second insulating member. Therefore, the field-emission electronic device can be formed to make the distance between the electrodes smaller than that of the known field-emission electronic device. Concretely, the distances between the cathode electrode and the gate electrode and between the cathode electrode and the anode electrode are allowed to be reduced. This results in lowering a gate voltage and an anode voltage.

Abstract translation: 场致发射电子器件用作场致发射电子源。 场发射电子器件包括阳极电极，设置在阳极电极上的第一绝缘构件，设置在第一绝缘构件上的阴极电极，设置在距第一绝缘构件一定距离的阳极电极上的第二绝缘构件，以及 设置在所述第二绝缘构件上的栅电极。 因此，场致发射电子器件可以形成为使得电极之间的距离小于已知的场致发射电子器件的距离。 具体地说，可以减小阴极电极和栅电极之间以及阴极电极和阳极电极之间的距离。 这导致栅极电压和阳极电压降低。

公开(公告)号：US5313138A

公开(公告)日：1994-05-17

申请号：US774708

申请日：1991-10-09

Applicant: Henri Desmur

Inventor： Henri Desmur

IPC: H01J3/02 ,  H01J23/06 ,  H01J23/34 ,  H01L31/09 ,  H03K17/10 ,  H03K17/78

CPC classification number: H03K17/78 ,  H01J23/06 ,  H01J23/34 ,  H01J3/021 ,  H01L31/09 ,  H03K17/10

Abstract: An electron gun is modulated by an optoelectronic switching device. This switching device comprises a modulated light source and at least one GaAs or Si solid-state optoelectronic switch, this switch being non-conductive when not illuminated and conductive when illuminated by the modulated light source; the device also includes components to transmit the light from the source to the switch(es). In one embodiment, the modulated light source is a laser and in a second embodiment the source is a continuous source externally modulated by a mechanical or electrooptical device. The optoelectronic switching device is connected between a high-voltage source and the cathode of an electron gun, thus modulating the cathode.The invention is particularly applicable to microwave electron tubes.

Abstract translation: 电子枪由光电开关装置调制。 该开关装置包括调制光源和至少一个GaAs或Si固态光电开关，该开关在被调制光源照射时不被照射和导通时是非导通的; 该设备还包括将光从源传输到交换机的组件。 在一个实施例中，调制光源是激光器，在第二实施例中，源极是由机械或电光器件外部调制的连续光源。 光电开关器件连接在高电压源和电子枪的阴极之间，从而调制阴极。 本发明特别适用于微波电子管。

公开(公告)号：US5302881A

公开(公告)日：1994-04-12

申请号：US896064

申请日：1992-06-08

Applicant: James P. O'Loughlin

Inventor： James P. O'Loughlin

IPC: H01J3/02 ,  H01J23/04 ,  H01J7/24

CPC classification number: H01J3/025 ,  H01J23/04

Abstract: A high energy level electronic device is segregated into source diode and utilization diode portions, portions which may also be identified as cathode and main diode portions, respectively. The cathode diode portion is operated at a low voltage such that closure velocity effects therein although present, are minimized. A current of electrons, generated by in cathode diode plasma is fed to the second diode through an anode screen portion of the cathode diode. In this arrangement, since there are electrons, but no plasma cathode present in the main diode, no closing problem occurs therein. In this arrangement, therefore the cathode diode is effectively a source of current for the main diode and is operated at minimal voltage to enable the provision of current for a maximum length of time prior to closure effect terminations. The main diode is separated from the plasma and therefore may be operated at any arbitrarily high voltage free from closing effects, which remain isolated and controlled in the cathode diode. Separate pulse forming network energization of the cathode and main diode portions of the device are also disclosed.

Abstract translation: 高能级电子器件分离成源二极管和利用二极管部分，分别也可以被识别为阴极和主二极管部分的部分。 阴极二极管部分以低电压工作，使得其中尽管存在封闭速度效应被最小化。 由阴极二极管等离子体产生的电子流通过阴极二极管的阳极屏幕部分被馈送到第二二极管。 在这种布置中，由于在主二极管中存在电子但没有存在等离子体阴极，所以不会发生闭合问题。 在这种布置中，因此阴极二极管实际上是用于主二极管的电流源，并且以最小电压工作，以使得能够在封闭效应终止之前提供最大长度的电流。 主二极管与等离子体分离，因此可以在没有关闭效应的任何高电压下工作，这在阴极二极管中保持隔离和控制。 还公开了器件的阴极和主二极管部分的单独的脉冲形成网络通电。

公开(公告)号：US5289077A

公开(公告)日：1994-02-22

申请号：US826459

申请日：1992-01-27

Applicant: Ryuichi Ugajin

Inventor： Ryuichi Ugajin

IPC: H01J3/02 ,  H01J21/10 ,  H01J19/24 ,  H01J1/30

CPC classification number: H01J3/022 ,  H01J21/105

Abstract: A vacuum microelectronic transistor which can operate at a high speed and has a high mutual conductance. The vacuum microelectronic transistor comprises an emitter for emitting electrons therefrom, a collector for receiving electrons from the emitter, and a pair of gate electrodes for controlling arrival of electrons from the emitter to the collector. The emitter and collector are disposed in an encapsulated condition on a substrate such that electrons emitted from the emitter run straightforwardly in vacuum to the collector while the gate electrodes are located adjacent and across a route of such electrons from the emitter to the collector. Also, a process of manufacturing such vacuum microelectronic transistor is disclosed.

Abstract translation: 一种真空微电子晶体管，可以高速运转并具有很高的互导性。 真空微电子晶体管包括用于从其发射电子的发射器，用于从发射极接收电子的集电极和用于控制电子从发射极到达集电极的一对栅电极。 发射极和集电极以封装状态设置在基板上，使得从发射极发射的电子在真空中直接运行到集电极，同时栅电极位于这些电子相邻并跨过这些电子从发射极到集电极的路径。 此外，公开了制造这种真空微电子晶体管的工艺。

公开(公告)号：US5283501A

公开(公告)日：1994-02-01

申请号：US732298

申请日：1991-07-18

Applicant: Xiaodong T. Zhu ,  James E. Jaskie ,  Robert C. Kane

Inventor： Xiaodong T. Zhu ,  James E. Jaskie ,  Robert C. Kane

IPC: H01J29/04 ,  H01J1/02 ,  H01J1/304 ,  H01J3/02 ,  H01J3/04 ,  H01J21/00 ,  H01J31/12 ,  H05B41/00

CPC classification number: H01J1/3042 ,  H01J3/022 ,  H01J2201/30457

Abstract: Electron devices employing electron sources including a material having a surface exhibiting a very low/negative electron affinity such as, for example, the 111 crystallographic plane of type II-B diamond. Electron sources with geometric discontinuities exhibiting radii of curvature of greater than approximately 1000.ANG. are provided which substantially improve electron emission levels and relax tip/edge feature requirements. Electron devices employing such electron sources are described including image generation electron devices, light source electron devices, and information signal amplifier electron devices.

Abstract translation: 使用电子源的电子器件包括具有非常低/负电子亲和力的表面的材料，例如II-B型金刚石的111晶体平面。 提供具有大于约1000（Aangstroem）的曲率半径的几何不连续性的电子源，其基本上改善电子发射水平并缓和尖端/边缘特征要求。 描述了使用这种电子源的电子器件，其包括图像生成电子器件，光源电子器件和信息信号放大器电子器件。