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    Method of producing single crystal of KTiOPO.sub.4
    92.
    发明授权
    Method of producing single crystal of KTiOPO.sub.4 失效
    生产KTiOPO4单晶的方法

    公开(公告)号：US5370076A

    公开(公告)日：1994-12-06

    申请号：US056530

    申请日：1993-05-05

    Applicant: Tsutomu Okamoto ,  Koji Watanabe ,  Tatsuo Fukui ,  Yasushi Minoya ,  Koichi Tatsuki ,  Shigeo Kubota

    Inventor： Tsutomu Okamoto ,  Koji Watanabe ,  Tatsuo Fukui ,  Yasushi Minoya ,  Koichi Tatsuki ,  Shigeo Kubota

    IPC: C30B15/00 ,  C30B9/00 ,  C30B29/22 ,  C30B29/32 ,  G02F1/35 ,  G02F1/355 ,  C30B9/12

    CPC classification number: C30B9/00 ,  C30B29/14

    Abstract: A method of growing a single crystal of KTiOPO.sub.4 which is a nonlinear optical material is disclosed. Growth of the single crystal of KTiOPO.sub.4 is carried out by melting a KTiOPO.sub.4 material with a flux to produce a melt, then contacting a seed crystal to the melt, and by slowly cooling at a saturation temperature or below. At this time, molar fractions of K.sub.2 O, P.sub.2 O.sub.5 and TiO.sub.2 contained in the melt fall within a region surrounded by six point in a K.sub.2 O-P.sub.2 O.sub.5 -TiO.sub.2 ternary phase diagram of A (K.sub.2 O:0.4150, P.sub.2 O.sub.5 :0.3906, TiO.sub.2 : 0.1944), B (K.sub.2 O:0.3750, P.sub.2 O.sub.5 : 0.3565, TiO.sub.2 : 0.2685), C (K.sub.2 O: 0.3750, P.sub.2 O.sub.5 : 0.3438, TiO.sub.2 : 0.2813), D (K.sub.2 O: 0.3850, P.sub.2 O.sub.5 : 0.3260, TiO.sub.2 : 0.2890), E (K.sub.2 O: 0.4000, P.sub.2 O.sub.5 : 0.3344, TiO.sub.2 : 0.2656), and F (K.sub.2 O: 0.4158, P.sub.2 O.sub.5 : 0.3744, TiO.sub.2 : 0.2098). In addition, K.sub.15 P.sub.13 O.sub.40 or the same composition produced by melting is used as the flux, and the proportion of a KTiOPO.sub.4 element in a composition of the melt is prescribed to 83.5 to 90.0 mol %. The seed crystal is set so that a C axis is in a direction perpendicular to a melt surface. Then, the seed crystal contacted to the melt is rotated and slowly cooled. Thus, a single crystal of KTiOPO.sub.4 of single domain at the end of growth can be produced.

    Abstract translation: 公开了一种生长作为非线性光学材料的KTiOPO4单晶的方法。 通过用助熔剂熔化KTiOPO 4材料以产生熔体，然后使晶种接触熔体，并通过在饱和温度或更低温度下缓慢冷却来进行KTiOPO4单晶的生长。 此时，K2O，P2O5和TiO 2的摩尔分数在A（K2O：0.4150，P2O5：0.3906，TiO 2：0.1944），K 2 O 3的K 2 O 5 - （K2O：0.3750，P2O5：0.3565，TiO2：0.2685），C（K2O：0.3750，P2O5：0.3438，TiO2：0.2813），D（K2O：0.3850，P2O5：0.3260，TiO2：0.2890），E（K2O： P 2 O 5：0.3344，TiO 2：0.2656）和F（K 2 O：0.4158，P 2 O 5：0.3744，TiO 2：0.2098）。 此外，将K15P13O40或通过熔融制造的相同组成用作助熔剂，并且将熔体组成中的KTiOPO 4元素的比例规定为83.5〜90.0mol％。 晶种被设定为使得C轴在垂直于熔体表面的方向上。 然后，将与熔体接触的晶种旋转并缓慢冷却。 因此，可以生产在生长结束时单畴KTiOPO4的单晶。

    Doped crystalline titanyl arsenates and preparation thereof
    94.
    发明授权
    Doped crystalline titanyl arsenates and preparation thereof 失效
    掺杂的结晶钛酸铅及其制备方法

    公开(公告)号：US5326423A

    公开(公告)日：1994-07-05

    申请号：US954174

    申请日：1992-09-30

    Applicant: Albert A. Ballman ,  Lap K. Cheng

    Inventor： Albert A. Ballman ,  Lap K. Cheng

    IPC: G02F1/35 ,  C30B9/00 ,  C30B17/00 ,  C30B29/22 ,  G02F1/355 ,  G02F1/361 ,  C30B9/12

    CPC classification number: C30B9/00 ,  C30B29/10

    Abstract: Doped crystalline compositions (e.g., single domain crystals) of MTiOAsO.sub.4 (wherein M is K, Rb and/or Cs) are disclosed which contain at least about 10 ppm total of Fe, Sc and/or In dopant. Also disclosed is a flux process which is characterized by adding said dopant to a melt containing the components for forming MTiOAsO.sub.4, in an amount effective to provide a doped single domain crystal of MTiOAsO.sub.4 containing at least 10 ppm of said dopant.

    Abstract translation: 公开了MTiOAsO4（其中M为K，Rb和/或Cs）的掺杂结晶组合物（例如，单结晶体晶体），其含有至少约10ppm的Fe，Sc和/或In掺杂剂。 还公开了一种助焊剂工艺，其特征在于将所述掺杂剂加入含有用于形成MTiOAsO 4的组分的熔体中，其量有效地提供含有至少10ppm所述掺杂剂的MTiOAsO 4的掺杂单结晶体晶体。

    Optically useful compositions and a sol-gel process for their production
    95.
    发明授权
    Optically useful compositions and a sol-gel process for their production 失效
    光学上有用的组合物和其生产的溶胶 - 凝胶法

    公开(公告)号：US5281405A

    公开(公告)日：1994-01-25

    申请号：US838589

    申请日：1992-02-19

    Applicant: Mark A. Harmer

    Inventor： Mark A. Harmer

    IPC: C30B7/14 ,  C01B25/45 ,  C30B5/00 ,  C30B29/22 ,  G02B6/13 ,  G02F1/355 ,  C01B25/26 ,  C01G23/00 ,  C01G28/02 ,  C03C3/00

    CPC classification number: G02B6/13 ,  C01B25/45 ,  C01B25/451 ,  C30B29/10 ,  C30B29/14 ,  C30B5/00 ,  G02F1/3553

    Abstract: A sol-gel process is disclosed for preparing MTiOXO.sub.4 when M is K, Rb, Tl and/or NH.sub.4 and X is P and/or As which involves dissolving suitable compounds of M, Ti and X in stoichiometic amounts in a suitable organic liquid, and then producing crystalline MTiOXO.sub.4 using procedures including hydrolysis, condensation, solidification and pyrolysis. Bulk material and films (e.g., films of KTP on a single crystal silicon substrate) may be produced. Compositions comprising films of said MTiOXO.sub.4 produced by this process are disclosed.

    Abstract translation: 公开了当M为K，Rb，T1和/或NH4且X为P时制备MTiOXO4的溶胶 - 凝胶法和/或As，其涉及以合适的有机液体中化学计量的M，Ti和X的合适化合物溶解， 然后使用包括水解，缩合，固化和热解的方法制备结晶MTiOXO4。 可以制造块状材料和膜（例如，单晶硅衬底上的KTP的膜）。 公开了包含通过该方法生产的所述MTiOXO4的膜的组合物。

    Method of manufacturing a component of the tape or filament kind out of a material based on a superconducting oxide having a high critical temperature, and a component obtained thereby
    96.
    发明授权
    Method of manufacturing a component of the tape or filament kind out of a material based on a superconducting oxide having a high critical temperature, and a component obtained thereby 失效
    基于具有高临界温度的超导氧化物的材料制造带或丝的种类的组分的方法和由此获得的成分

    公开(公告)号：US5276011A

    公开(公告)日：1994-01-04

    申请号：US816714

    申请日：1992-01-03

    Applicant: Christian Belouet

    Inventor： Christian Belouet

    IPC: C30B29/22 ,  H01B12/06 ,  H01B13/00 ,  H01L39/24 ,  C03B37/00

    CPC classification number: H01L39/248 ,  Y10S505/704 ,  Y10S505/727 ,  Y10S505/733 ,  Y10S505/742

    Abstract: A method of manufacturing a component of the tape or filament kind out of a material based on a superconducting oxide having a high critical temperature, wherein said material is formed while it is in the vitreous state,the method being characterized by the fact that the material is subsequently crystallized:in a first step under a magnetic field and at a temperature T.sub.l lying between the vitreous transition temperature T.sub.g and the crystallization temperature T.sub.x, during which step isolated microcrystallites of submicroscopic size develop and their c axes orient themselves parallel to one another because of said applied magnetic field; andin a second step at a temperature T.sub.2 close to the crystallization temperature, in which the existing nuclei grow while retaining the texture imparted to them during said first step.

    Abstract translation: 一种基于具有高临界温度的超导氧化物的材料制造带或丝的部件的方法，其中所述材料在玻璃状态下形成，该方法的特征在于材料 随后在第一步中在磁场和位于玻璃态转变温度Tg和结晶温度Tx之间的温度T1下结晶，在此步骤中分离出亚微米尺寸的微晶，其+ E，rar / c /轴定向 由于所述施加的磁场，它们彼此平行; 并且在接近结晶温度的温度T2的第二步骤中，其中现有核生长同时保持在所述第一步骤期间赋予它们的纹理。

    Process of preparing yttrium based superconductors
    98.
    发明授权
    Process of preparing yttrium based superconductors 失效
    制备钇基超导体的工艺

    公开(公告)号：US5248660A

    公开(公告)日：1993-09-28

    申请号：US814874

    申请日：1991-12-31

    Applicant: Een H. Lee ,  I. Hun Song ,  Seok Y. Yoon

    Inventor： Een H. Lee ,  I. Hun Song ,  Seok Y. Yoon

    IPC: C01G1/00 ,  C01G3/00 ,  C04B35/45 ,  C04B35/653 ,  C22C1/10 ,  C30B29/22 ,  H01L39/24

    CPC classification number: C04B35/653 ,  C04B35/4508 ,  H01L39/2419 ,  H01L39/2483 ,  Y10S505/733 ,  Y10S505/742

    Abstract: A process of preparing a yttrium based superconductor including partial melting a body of YBa.sub.2 Cu.sub.3 O.sub.y compound which is stacked on a Y.sub.2 BaCuO.sub.5 plate, to produce a liquid phase, BaCu.sub.2.CuO which flows down into the Y.sub.2 BaCuO.sub.5 plate, a peritectic reaction of the Y.sub.2 BaCuO.sub.5 of the plate, with the liquid phase, BaCuO.sub.2.CuO, to form a YBa.sub.2 Cu.sub.3 O.sub.y phase, and cooling and annealing the resulting YBa.sub.2 Cu.sub.3 O.sub.y to gain superconducting properties, in which weak-links are reduced by the well oriented-grains with few voids, and the grains of the fine grained Y.sub.2 BaCuO.sub.5 phase act as flux pinning centers, which increases the critical current density.

    Abstract translation: 一种制备钇基超导体的方法，其包括部分熔融YBa2Cu3Oy化合物的本体，其堆叠在Y2BaCuO5板上以产生液相，向下流入Y2BaCuO5板的BaCu2.CuO，板的Y2BaCuO5的包晶反应 用液相BaCuO2.CuO形成YBa2Cu3Oy相，冷却和退火所得的YBa2Cu3Oy以获得超导特性，其中弱连接通过很少空隙的良好取向的晶粒减少，并且 细粒度的Y2BaCuO5相作为磁通钉扎中心，增加临界电流密度。

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