公开(公告)号：US20020179935A1

公开(公告)日：2002-12-05

申请号：US09865429

申请日：2001-05-29

Applicant: MOTOROLA, INC.

Inventor： James S. Irwin

IPC: H01L031/0328 ,  H01L031/0336 ,  H01L031/072 ,  H01L031/109

CPC classification number: H01L21/02546 ,  H01L21/02381 ,  H01L21/02439 ,  H01L21/02488 ,  H01L21/02505 ,  H01P7/10 ,  H03B5/1876

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. A portion of the accommodating buffer layer may be used to form a dielectric for a dielectric resonance. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. The use of monocrystalline dielectric material as an overlying layer is disclosed to facilitate the fabrication of on chip high frequency communications devices such as dielectric resonators with direct interface to compound semiconductor material in the integrated circuit. The provision of on chip resonators through the use of dielectric material in the form of a monocrystalline layer facilitates high frequency communications circuits on a single integrated circuit that may include materials such as thin film crystalline materials used as resonators including dielectric resonators.

Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 实现顺应性衬底的形成的一种方式包括首先在硅晶片上生长容纳缓冲层。 容纳缓冲层是通过氧化硅的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶材料层晶格匹配。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 容纳缓冲层的一部分可以用于形成用于介电共振的电介质。 此外，顺应性衬底的形成可以包括利用表面活性剂增强的外延，将单晶硅外延生长到单晶氧化物上，以及Zintl相材料的外延生长。 公开了使用单晶电介质材料作为覆盖层，以促进片上高频通信设备的制造，例如与集成电路中的化合物半导体材料直接接口的介质谐振器。 通过使用单晶层形式的介电材料来提供片上谐振器有助于单个集成电路上的高频通信电路，其可以包括诸如用作包括介质谐振器的谐振器的薄膜晶体材料的材料。

公开(公告)号：US6124767A

公开(公告)日：2000-09-26

申请号：US352978

申请日：1999-07-14

Applicant: Donnie W. Woods

Inventor： Donnie W. Woods

IPC: H01P1/203 ,  H01P7/10 ,  H03B5/18 ,  H03F1/56 ,  H03F3/60

CPC classification number: H01P1/20309 ,  H01P7/10 ,  H03B5/1876 ,  H03F1/56 ,  H03F3/601

Abstract: An RF/Microwave oscillator is disclosed that has the high-Q, low-loss, and phase noise performance of a DRO, without the need of a dielectric resonator to achieve such performance. The RF/Microwave oscillator includes a field effect transistor having a drain coupled to an output circuit, a source coupled to a series feedback circuit, and a gate coupled to a resonator circuit. Each of these circuits are comprised of cascaded pairs of coupled transmission lines designed to resonate at the operating frequency of the oscillator. The RF/Microwave oscillator may also include a frequency-adjustable bias circuit, a frequency-adjustable FET gate return, and a frequency tuning circuit.

Abstract translation: 公开了一种RF /微波振荡器，其具有DRO的高Q，低损耗和相位噪声性能，而不需要介质谐振器来实现这种性能。 RF /微波振荡器包括场效应晶体管，其具有耦合到输出电路的漏极，耦合到串联反馈电路的源极和耦合到谐振器电路的栅极。 这些电路中的每一个包括被设计为在振荡器的工作频率下共振的耦合传输线的级联对。 RF /微波振荡器还可以包括频率可调偏置电路，频率可调FET门极返回和频率调谐电路。

公开(公告)号：US5752180A

公开(公告)日：1998-05-12

申请号：US544899

申请日：1995-10-18

Applicant: Chaoying Guo ,  Jean-Paul Grimm

Inventor： Chaoying Guo ,  Jean-Paul Grimm

IPC: H03B5/18 ,  H03D7/00 ,  H03D9/06 ,  H04B1/26

CPC classification number: H03B5/1876

Abstract: A radio frequency converter includes a plurality of signal paths for simultaneously processing two RF signals in the same band but with different polarizations, each of which includes a mixer and an oscillator. A common resonator is connected to the frequency control terminal of each of the oscillators and the oscillators work in a push-push configuration.

Abstract translation: 无线电频率转换器包括用于同时处理相同频带中但具有不同偏振的两个RF信号的多个信号路径，每个RF信号包括混频器和振荡器。 公共谐振器连接到每个振荡器的频率控制端子，并且振荡器以推 - 推配置工作。

公开(公告)号：US5748049A

公开(公告)日：1998-05-05

申请号：US344753

申请日：1994-11-23

Applicant: John Thomas Bayruns ,  Raymond Mitchell Waugh ,  Phillip W. Wallace ,  Robert J. Bayruns ,  Thomas D. DeNigris

Inventor： John Thomas Bayruns ,  Raymond Mitchell Waugh ,  Phillip W. Wallace ,  Robert J. Bayruns ,  Thomas D. DeNigris

IPC: H03B1/00 ,  H03B5/18 ,  H03B25/00 ,  H03J5/24 ,  H04B1/28 ,  H03B5/00 ,  H04B1/26

CPC classification number: H03J5/24 ,  H03B5/1876 ,  H04B1/28 ,  H03B2201/0275 ,  H03B25/00

Abstract: A multiple-frequency local oscillator for providing an LO signal at one of a multiple of predetermined resonant frequencies associated with a number of resonators is disclosed. It includes a number of LO input ports for coupling to a plurality of resonators, respectively, each resonator having a predetermined resonant frequency; the local oscillator is controlled to selectively provide at its LO output port an output LO signal at any one of the resonant frequencies.

Abstract translation: 公开了一种用于以与多个谐振器相关联的多个预定谐振频率中的一个提供LO信号的多频本地振荡器。 它包括分别耦合到多个谐振器的多个LO输入端口，每个谐振器具有预定的谐振频率; 控制本地振荡器以在其LO输出端口选择性地在任何一个谐振频率处提供输出LO信号。

公开(公告)号：US5578969A

公开(公告)日：1996-11-26

申请号：US489943

申请日：1995-06-13

Applicant: Aron Z. Kain

Inventor： Aron Z. Kain

IPC: H03B5/18

CPC classification number: H03B5/1876

Abstract: A split dielectric resonator having two preferably half cylindrical dielectric elements is used to stabilize an oscillator operating at microwave frequencies. Fine tuning may be achieved by means of a tuning screw which has a thermal expansion coefficient between those of the dielectric elements and electrically conductive supporting walls. Additionally, fine tuning may be achieved by offsetting the two elements from each other within a horizontal or vertical plane. This oscillator can also be configured as an accelerometer or pressure or displacement sensor by substituting a movable deflecting member for the supporting wall.

Abstract translation: 具有两个优选半圆柱形介质元件的分裂介电谐振器用于稳定以微波频率工作的振荡器。 微调可以通过调谐螺钉来实现，所述调谐螺钉具有介电元件和导电支撑壁之间的热膨胀系数。 此外，可以通过在水平或垂直平面内将两个元件彼此抵消来实现微调。 该振荡器还可以通过将可移动偏转构件替换为支撑壁而被配置为加速度计或压力或位移传感器。

公开(公告)号：US5450040A

公开(公告)日：1995-09-12

申请号：US290076

申请日：1994-08-12

Applicant: Toshiaki Matsui ,  Masahiro Kiyokawa

Inventor： Toshiaki Matsui ,  Masahiro Kiyokawa

IPC: G02B7/198 ,  H01P5/08 ,  H01Q3/46 ,  H01S1/00 ,  H01S3/08 ,  H03B5/18 ,  H03B7/12 ,  H03B7/14 ,  H03B9/14

CPC classification number: H03B7/146 ,  H01Q3/46 ,  H03B5/1876

Abstract: A Gaussian-beam oscillator for microwave and millimeter wave comprising a negative resistance amplifier circuit which produces and amplifies a high-frequency signal, a resonator consisting of a pair of reflecting mirrors, which consist of a spherical mirror and a planar mirror or two spherical mirrors, and a wave path which transmits the high-frequency signal between said resonator and said negative resistance amplifier circuit, one reflecting mirror of said resonator having an electromagnetic wave coupling region constituted as a circular partially transparent mirror surface region having its center on the optical axis, the other reflecting mirror having a strip element provided at the center of the optical axis and on the rear surface of said strip element having a coupling region for coupling with said wave path, said one reflecting mirror constituting said resonator and having the electromagnetic wave coupling region having a higher reflectance than the reflectance of the other reflecting mirror.

Abstract translation: 一种用于微波和毫米波的高斯光束振荡器，包括产生和放大高频信号的负电阻放大器电路，由一对反射镜组成的谐振器，该反射镜由球面镜和平面镜或两个球面镜组成 以及在所述谐振器和所述负电阻放大器电路之间传输所述高频信号的波道，所述谐振器的一个反射镜具有电磁波耦合区域，所述电磁波耦合区域构成其在光轴上的中心的圆形部分透明的镜面区域 所述另一反射镜具有设置在所述光轴中心处的带状元件，并且所述带状元件的后表面具有用于与所述波道耦合的耦合区域，所述一个反射镜构成所述谐振器并具有电磁波耦合 区域的反射率比另一个反射率的反射率高 选镜。

公开(公告)号：US5341111A

公开(公告)日：1994-08-23

申请号：US945615

申请日：1992-09-16

Applicant: Tatsuya Miya ,  Kazuyoshi Uemura ,  Sadayoshi Yoshida

Inventor： Tatsuya Miya ,  Kazuyoshi Uemura ,  Sadayoshi Yoshida

IPC: H03B5/12 ,  H03B5/18 ,  H03B19/14 ,  H03B21/01

CPC classification number: H03B5/1876 ,  H03B5/1203 ,  H03B5/1206 ,  H03B5/1228 ,  H03B5/18 ,  H03B2200/0028 ,  H03B2200/0034 ,  H03B2200/0062 ,  H03B2200/007

Abstract: A microwave oscillator circuit is provided for decreasing the number of passive elements such as inductance, etc. in microwave oscillators and frequency doublers. A microwave oscillator circuit is connected to a resonator circuit generating a signal at a frequency f, and produces at its output a signal of frequency nf, and comprises a first field effect transistor having a gate connected to the resonator circuit, a second field effect transistor whose source/drain path is connected in series with the source/drain path of the first field effect transistor and a connecting circuit for coupling either the gate or source of the first field effect transistor to the gate of the second field effect transistor. A signal of frequency nf is output at a node corresponding to a connection point between the source of the first field effect transistor and the drain of the second field effect transistor.

Abstract translation: 提供了微波振荡器电路，用于减少微波振荡器和倍频器中无源元件的数量，如电感等。 微波振荡器电路连接到产生频率为f的信号的谐振电路，并在其输出端产生频率为nf的信号，并且包括具有连接到谐振电路的栅极的第一场效应晶体管，第二场效应晶体管 其源极/漏极路径与第一场效应晶体管的源极/漏极路径串联连接，以及用于将第一场效应晶体管的栅极或源极耦合到第二场效应晶体管的栅极的连接电路。 在与第一场效应晶体管的源极和第二场效应晶体管的漏极之间的连接点对应的节点处输出频率nf的信号。

公开(公告)号：US5291153A

公开(公告)日：1994-03-01

申请号：US871702

申请日：1992-04-21

Applicant: Nobuo Shiga

Inventor： Nobuo Shiga

IPC: H01P3/08 ,  H01P1/203 ,  H01P7/10 ,  H03B1/04 ,  H03B5/18

CPC classification number: H03B5/1876 ,  H01P1/203 ,  H03B2200/0022 ,  H03B2200/0028 ,  H03B2202/027 ,  H03B2202/05 ,  H03B5/1852

Abstract: An oscillating circuit includes a substrate, a FET formed on the substrate, a series feedback capacitor connected to the source of the FET, a microstrip line formed on the substrate and connected to the gate of the FET, and a dielectric resonator which is electromagnetically coupled to the microstrip line. The dielectric resonator is located near the microstrip line.

Abstract translation: 振荡电路包括衬底，形成在衬底上的FET，连接到FET的源极的串联反馈电容器，形成在衬底上并连接到FET的栅极的微带线，以及电磁耦合的介质谐振器 到微带线。 介质谐振器位于微带线附近。

公开(公告)号：US4763084A

公开(公告)日：1988-08-09

申请号：US35213

申请日：1987-04-09

Applicant: Anthony M. Pavio, Jr. ,  Mark A. Smith

Inventor： Anthony M. Pavio, Jr. ,  Mark A. Smith

IPC: H03B1/04 ,  H03B5/18 ,  H03B19/14

CPC classification number: H03B5/1876 ,  H03B19/14 ,  H03B2200/007 ,  H03B2200/0088 ,  H03B2200/009 ,  H03B2200/0098 ,  H03B2202/073 ,  H03B2202/086 ,  H03B5/1852

Abstract: A push-push broadband dielectric resonator oscillator circuit that operates in the K and Ka band frequency range has two oscillator circuits that oscillate at the same fundamental frequency. An antiphaseal relationship is maintained between the two oscillators through the use of a dielectric resonator and the desired frequency is obtained by vectorially combining the output signals of the two oscillators that have the antiphase relationship to obtain an output frequency that is twice the fundamental frequency of operation of each of the individual dielectric resonator oscillator circuits.

Abstract translation: 在K和Ka频带范围内工作的推挽式宽带介质谐振器振荡器电路具有以相同基频振荡的两个振荡电路。 通过使用介质谐振器在两个振荡器之间保持反相关系，并且通过对具有反相关系的两个振荡器的输出信号进行矢量组合来获得期望的频率，以获得基本工作频率的两倍的输出频率 每个介质谐振器振荡器电路。

公开(公告)号：US4736168A

公开(公告)日：1988-04-05

申请号：US43286

申请日：1987-03-18

Applicant: Eiji Nagata

Inventor： Eiji Nagata

IPC: H03B19/00 ,  H03B5/18 ,  H03B19/14

CPC classification number: H03B5/1876 ,  H03B19/14 ,  H03B2200/007 ,  H03B5/1852

Abstract: In a dielectric resonator controlled oscillator with frequency multiplication, a line (12) has an open end and another end connected to a gate electrode of an FET (11) with a dielectric resonator (13) electromagnetically coupled to the line at a location along a total length of the line. The total length is selected to make a combination of the line and the dielectric resonator have a substantially zero impedance for a higher harmonic frequency when seen from the gate electrode. More specifically, the total length is selected so as to be equal to about three quarters of a wavelength which a frequency multiplied oscillation, such as a frequency doubled oscillation, has in the line. The location is selected so as to optimize the oscillator for a fundamental oscillation of a fundamental frequency determined by the dielectric resonator.

Abstract translation: PCT No.PCT / JP86 / 00390 Sec。 371日期1987年3月18日 102（e）1987年3月18日PCT PCT 1986年7月23日PCT公布。 公开号WO87 / 00707 日本1987年1月29日。在具有倍频的介质谐振器控制振荡器中，线（12）具有开口端，另一端连接到具有电介质谐振器（13）的FET（11）的栅电极，电介质谐振器 沿着线的总长度的一个位置的线。 总长度被选择为使得当从栅电极观察时，线和介质谐振器的组合对于较高谐波频率具有基本零阻抗。 更具体地，总长度被选择为等于频率倍增振荡（例如倍频振荡）的波长的大约四分之三。 选择该位置以优化用于由介质谐振器确定的基频的基本振荡的振荡器。