公开(公告)号：US20240339306A1

公开(公告)日：2024-10-10

申请号：US18746251

申请日：2024-06-18

Applicant: Tokyo Electron Limited

Inventor： Atsushi SAWACHI ,  Jun HIROSE ,  Takuya NISHIJIMA ,  Ichiro SONE ,  Suguru SATO

IPC: H01J37/32

CPC classification number: H01J37/32733 ,  H01J37/3244 ,  H01J37/32899

Abstract: A substrate processing apparatus is provided. The substrate processing apparatus comprise: a first chamber including a sidewall providing an opening, the first chamber further including a movable part movable upward and downward within the first chamber; a substrate support disposed within the first chamber; a second chamber disposed within the first chamber and defining, together with the substrate support, a processing space in which a substrate mounted on the substrate support is processed, the second chamber being separable from the first chamber and transportable between an inner space of the first chamber and the outside of the first chamber via the opening; a clamp releasably fixing the second chamber to the movable part extending above the second chamber; a release mechanism configured to release the fixing of the second chamber by the clamp; and a lift mechanism configured to move the movable part upward and downward.

公开(公告)号：US20240339304A1

公开(公告)日：2024-10-10

申请号：US18617334

申请日：2024-03-26

Applicant: Tokyo Electron Limited

Inventor： Kazushi Kaneko ,  Satoru Kawakami ,  Yuki Osada

IPC: H01J37/32

CPC classification number: H01J37/32669 ,  H01J37/32165

Abstract: There is a plasma processing apparatus comprising: a processing chamber having a processing space; an electromagnetic wave generator configured to generate electromagnetic waves for plasma excitation; a dielectric having a first surface; an electromagnetic wave supply part configured to supply the electromagnetic waves to the processing space via the dielectric; and a resonator array structure disposed along the first surface of the dielectric, wherein the resonator array structure includes a plurality of resonators, each resonator having a structure in which a conductive member is laminated on one surface of a dielectric plate, having a first resonance frequency, capable of resonating with magnetic field components of the electromagnetic waves and having a size smaller than a wavelength of the electromagnetic waves, and the resonator array structure is configured to form cells surrounded by the resonators, and the cells include the resonators having different first resonance frequencies between the cells.

公开(公告)号：US20240339297A1

公开(公告)日：2024-10-10

申请号：US18296944

申请日：2023-04-06

Applicant: Tokyo Electron Limited

Inventor： Qiang Wang ,  Peter Lowell George Ventzek ,  Shyam Sridhar ,  Mitsunori Ohata

IPC: H01J37/32 ,  H03H7/38

CPC classification number: H01J37/32183 ,  H01J37/32091 ,  H01J37/3211 ,  H03H7/38 ,  H01J37/32155 ,  H01J2237/24564 ,  H01J2237/334

Abstract: An embodiment matching circuit for a plasma tool includes an impedance matching network configured to be coupled between a power supply and an antenna of a plasma chamber. The power supply is configured to provide power to and excite the antenna at a first frequency to generate a plasma. The impedance matching network is configured such that, during operation of the plasma chamber at the first frequency, a phase angle between a voltage and a current in the impedance matching network is matched to be 0°, and an impedance of the impedance matching network and the plasma chamber equals an impedance of the power supply. The impedance matching network includes a first adjustable reactive component; and a first fixed-length transmission line coupled between the first adjustable reactive component and an input of the antenna.

公开(公告)号：US20240332047A1

公开(公告)日：2024-10-03

申请号：US18610344

申请日：2024-03-20

Applicant: Tokyo Electron Limited

Inventor： Yoshitaka MIURA ,  Tomoyuki NAGATA

IPC: H01L21/67

CPC classification number: H01L21/67248 ,  H01L21/67017 ,  H01L21/6719 ,  H01L21/67253

Abstract: A substrate processing apparatus includes: a process container accommodating a substrate holder that holds a plurality of substrates and including an opening at a lower end of the process container; a lid configured to open and close the opening; and a thermal insulator installed on the lid and configured to thermally insulate a first space below the substrate holder. The thermal insulator includes a partition member that forms a second space partitioned from the first space. The lid includes a supply port for supplying a temperature regulation fluid to the second space and an exhaust port for discharging the temperature regulation fluid from the second space.

公开(公告)号：US20240332043A1

公开(公告)日：2024-10-03

申请号：US18616594

申请日：2024-03-26

Applicant: Tokyo Electron Limited

Inventor： Tomoyuki NAGATA ,  Yoshitaka MIURA

IPC: H01L21/67

CPC classification number: H01L21/67109

Abstract: A substrate processing apparatus includes a vacuum container configured to accommodate a substrate holder configured to hold a plurality of substrates and having an opening provided in a lower end of the vacuum container, a lid configured to open/close the opening, and a heat-insulating unit configured to insulate a first space below the substrate holder, wherein the heat-insulating unit includes a partition member that forms a second space partitioned from the first space, and the partition member is provided to be rotatable with respect to the lid.

公开(公告)号：US20240332041A1

公开(公告)日：2024-10-03

申请号：US18706425

申请日：2022-09-30

Applicant: Tokyo Electron Limited

Inventor： Kazuhiro AIURA ,  Yoshifumi AMANO

IPC: H01L21/67 ,  H01L21/306

CPC classification number: H01L21/6708 ,  H01L21/30604

Abstract: A substrate processing apparatus includes: a substrate rotator configured to hold and rotate a substrate; an outer cup configured to annularly cover a periphery of the substrate held by the substrate rotator; an inner cup disposed inside the outer cup and under the substrate held by the substrate rotator; an annular drain formed between the outer cup and the inner cup to discharge a processing liquid supplied to the substrate outward; and an exhaust passage formed inside the inner cup, wherein the inner cup has an exhaust hole through which a liquid reception space, which is formed by the inner cup and the outer cup, and the exhaust passage are in communication with each other, and the exhaust hole is formed obliquely downward from an outer surface to an inner surface of the inner cup.

公开(公告)号：US20240331978A1

公开(公告)日：2024-10-03

申请号：US18740007

申请日：2024-06-11

Applicant: Tokyo Electron Limited

Inventor： Chishio KOSHIMIZU

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/32568 ,  H01J37/32642 ,  H01J37/32715 ,  H01J2237/2007 ,  H01J2237/334

Abstract: The disclosed plasma processing apparatus includes a chamber, a substrate support, a radio frequency power source, and a bias power source. The radio frequency power source generates radio frequency power to generate plasma. The bias power source is connected to a bias electrode of the substrate support, and generates an electric bias. An edge ring mounted on the substrate support receives a part of the electric bias through an impedance adjuster or receives another electric bias. An outer ring extends outside the edge ring in a radial direction, and receives a part of the radio frequency power or other radio frequency power.

公开(公告)号：US20240328033A1

公开(公告)日：2024-10-03

申请号：US18609525

申请日：2024-03-19

Applicant: Tokyo Electron Limited

Inventor： Tuhin Shuvra BASU ,  Hiroto FUJIKAWA ,  Keita KUMAGAI ,  Yoshihiro TAKEZAWA ,  Daisuke SUZUKI

IPC: C30B29/06

CPC classification number: C30B29/06

Abstract: A film forming method for forming a silicon film on a substrate, includes supplying a silane-based gas and a termination gas to the substrate during a period. The termination gas includes an element having an electronegativity lower than an electronegativity of hydrogen, and the supplying includes terminating a dangling bond of silicon in the silicon film with the element.

公开(公告)号：US20240327984A1

公开(公告)日：2024-10-03

申请号：US18615087

申请日：2024-03-25

Applicant: Tokyo Electron Limited

Inventor： Tuhin Shuvra Basu ,  Hiroto FUJIKAWA ,  Yutaka MOTOYAMA ,  Keita KUMAGAI

IPC: C23C16/455 ,  C23C16/24 ,  C23C16/34 ,  C23C16/40 ,  C23C16/52

CPC classification number: C23C16/45553 ,  C23C16/24 ,  C23C16/345 ,  C23C16/402 ,  C23C16/52

Abstract: A film forming method for forming a silicon film on a substrate, includes preparing a substrate having a first film and a second film on a surface thereof, supplying a growth inhibiting gas that inhibits growth of the silicon film to the substrate, to cause physical adsorption of the growth inhibiting gas on the first film, and forming the silicon film on the first film and on the second film by supplying a silane-based gas having a silicon number 1 to the substrate having the growth inhibiting gas physically adsorbed on the first film.

公开(公告)号：US12106948B2

公开(公告)日：2024-10-01

申请号：US17649590

申请日：2022-02-01

Applicant: Tokyo Electron Limited

Inventor： Ken Hirano ,  Hiroki Endo

IPC: H01J37/32

CPC classification number: H01J37/32981 ,  H01J37/32174 ,  H01J37/32449 ,  H01J2237/0206

Abstract: A plasma processing apparatus includes a chamber; an apparatus-side controller configured to control plasma processing in the chamber; and a monitoring unit configured to monitor a monitoring target that is disposed within the chamber, or is connected directly or indirectly to the chamber. The apparatus-side controller sets the monitoring target and a timing at which monitoring target information is to be acquired. The monitoring unit acquires the monitoring target information transmitted from the monitoring target to the apparatus-side controller, detects an occurrence of an abnormality in the chamber based on the monitoring target information, and controls the monitoring target for the chamber in which the abnormality occurs.