Polishing pad with window and method of fabricating a window in a polishing pad
    93.
    发明授权
    Polishing pad with window and method of fabricating a window in a polishing pad 有权
    具有窗口的抛光垫和在抛光垫中制造窗口的方法

    公开(公告)号:US07118450B2

    公开(公告)日:2006-10-10

    申请号:US11225838

    申请日:2005-09-12

    IPC分类号: B24B49/00 B24B51/00

    摘要: The polishing pad for a chemical mechanical polishing apparatus, and a method of making the same. The polishing pad has a covering layer with a polishing surface and a backing layer which is adjacent to the platen. A first opening in the covering layer with a first cross-sectional area and a second opening in the backing layer with a second, different cross-sectional area form an aperture through the polishing pad. A substantially transparent polyurethane plug is positioned in the aperture, and an adhesive material fixes the plug in the aperture.

    摘要翻译: 用于化学机械抛光装置的抛光垫及其制造方法。 抛光垫具有与抛光表面相邻的覆盖层和与压板相邻的背衬层。 具有第一横截面积的覆盖层中的第一开口和具有第二不同横截面积的背衬层中的第二开口形成穿过抛光垫的孔。 基本上透明的聚氨酯塞被定位在孔中,并且粘合剂材料将塞子固定在孔中。

    Signal improvement in eddy current sensing
    94.
    发明授权
    Signal improvement in eddy current sensing 有权
    涡流检测信号改进

    公开(公告)号:US07016795B2

    公开(公告)日:2006-03-21

    申请号:US10359107

    申请日:2003-02-04

    IPC分类号: G06F19/00 G01B7/06

    摘要: Improved endpoint detection and/or thickness measurements may be obtained by correcting sensor data using calibration parameters and/or drift compensation parameters. Calibration parameters may include an offset and a slope, or other parameters. Drift compensation parameters may include off-wafer measurements.

    摘要翻译: 可以通过使用校准参数和/或漂移补偿参数校正传感器数据来获得改进的端点检测和/或厚度测量。 校准参数可以包括偏移和斜率,或其他参数。 漂移补偿参数可能包括晶圆外测量。

    Methods and apparatus for polishing control
    95.
    发明授权
    Methods and apparatus for polishing control 有权
    抛光控制方法和装置

    公开(公告)号:US07008875B2

    公开(公告)日:2006-03-07

    申请号:US10721769

    申请日:2003-11-24

    IPC分类号: H01L21/302 H01L21/461

    摘要: A CMP station can be closed loop controlled by using data obtained by an inline metrology station from a first polished wafer to affect the processing of subsequent polished wafers. The first wafer is polished and measured by the inline metrology station. The metrology station measures at various points the array dielectric thickness, field dielectric thickness, barrier residue thickness and metal residue thickness. The data is then inputted into an algorithm and polishing parameter outputs are calculated. The outputs are sent to the CMP station and used to supplement or replace the previous polishing parameters. Subsequent wafers are polished on the CMP station using the revised polishing parameters.

    摘要翻译: CMP站可以通过使用由第一抛光晶片的在线计量站获得的数据来闭环控制,以影响后续抛光晶片的处理。 第一个晶片经过内联计量站的抛光和测量。 测量站在各点测量阵列电介质厚度,场介电厚度,阻挡残留厚度和金属残留厚度。 然后将数据输入算法,并计算抛光参数输出。 输出被发送到CMP站,用于补充或替换以前的抛光参数。 随后的晶片在CMP站上使用修改的抛光参数进行研磨。

    Data processing for monitoring chemical mechanical polishing

    公开(公告)号:US07008296B2

    公开(公告)日:2006-03-07

    申请号:US10464673

    申请日:2003-06-18

    IPC分类号: B24B49/00

    CPC分类号: B24B37/013 B24B49/10

    摘要: Methods and apparatus to implement techniques for monitoring polishing a substrate. Two or more data points are acquired, where each data point has a value affected by features inside a sensing region of a sensor and corresponds to a relative position of the substrate and the sensor as the sensing region traverses through the substrate. A set of reference points is used to modify the acquired data points. The modification compensates for distortions in the acquired data points caused by the sensing region traversing through the substrate. Based on the modified data points, a local property of the substrate is evaluated to monitor polishing.

    Data processing for monitoring chemical mechanical polishing

    公开(公告)号:US20060009131A1

    公开(公告)日:2006-01-12

    申请号:US11222561

    申请日:2005-09-08

    IPC分类号: B24B49/00

    CPC分类号: B24B37/013 B24B49/10

    摘要: Methods and apparatus to implement techniques for monitoring polishing a substrate. Two or more data points are acquired, where each data point has a value affected by features inside a sensing region of a sensor and corresponds to a relative position of the substrate and the sensor as the sensing region traverses through the substrate. A set of reference points is used to modify the acquired data points. The modification compensates for distortions in the acquired data points caused by the sensing region traversing through the substrate. Based on the modified data points, a local property of the substrate is evaluated to monitor polishing.