公开(公告)号：US5185304A

公开(公告)日：1993-02-09

申请号：US745180

申请日：1991-08-15

Applicant: Takami Hirai ,  Shinsuke Yano ,  Masahiro Abe

Inventor： Takami Hirai ,  Shinsuke Yano ,  Masahiro Abe

IPC: C04B35/468 ,  H01B3/12

CPC classification number: C04B35/4686 ,  H01B3/12

Abstract: A dielectric ceramic composition is disclosed which consists principally of barium oxide, titanium oxide, neodymium oxide, samarium oxide and bismuth oxide, which are represented by the following formula xBaO--yTiO.sub.2 --z[(1-a-b)Nd.sub.2 O.sub.3 --aSm.sub.2 O.sub.3 --bBi.sub.2 O.sub.3 ], where 0.10.ltoreq.x.ltoreq.0.20, 0.60.ltoreq.y.ltoreq.0.75, 0.10.ltoreq.z.ltoreq.0.24, x+y+z=1, 0

公开(公告)号：US5103287A

公开(公告)日：1992-04-07

申请号：US605357

申请日：1990-10-30

Applicant: Yasukazu Mase ,  Masahiro Abe ,  Toshihiko Katsura

Inventor： Yasukazu Mase ,  Masahiro Abe ,  Toshihiko Katsura

IPC: H01L29/73 ,  H01L21/331 ,  H01L21/768 ,  H01L21/8222 ,  H01L23/522 ,  H01L27/06

CPC classification number: H01L21/768 ,  H01L23/5226 ,  H01L2924/0002

Abstract: An insulation film is formed on a semiconductor substrate in which semiconductor elements are formed. A plurality of wiring layers and interlaid insulation films are alternately laminated on the insulation film. The design margins of the laminated wiring layers and via holes formed in the interlaid insulation films are set to be larger as they are set at a higher level. The design margin is determined by using the focus margin, mask misalignment due to the mask alignment accuracy, pattern size conversion error, warp of the semiconductor substrate and irregularity of the surface of the semiconductor substrate as parameters.

公开(公告)号：US5100476A

公开(公告)日：1992-03-31

申请号：US499643

申请日：1990-03-27

Applicant: Yasukazu Mase ,  Osamu Hirata ,  Masahiro Abe

Inventor： Yasukazu Mase ,  Osamu Hirata ,  Masahiro Abe

IPC: B08B3/12 ,  H01L21/00 ,  H01L21/304

CPC classification number: H01L21/67051

Abstract: An apparatus for cleaning semiconductor devices has a mixing section for mixing a chemical solution with pure water. A semiconductor substrate to be cleaned is placed on a support. An ultrasonic generator applies ultrasonic vibrations to the supplied pure water. The mixing section mixes a predetermined chemical solution with the pure water applied with the ultrasonic vibrations and supplies a desired pure water solution onto the semiconductor substrate.

公开(公告)号：US5089061A

公开(公告)日：1992-02-18

申请号：US247954

申请日：1988-09-22

Applicant: Masahiro Abe ,  Kazuhisa Okada ,  Shuzo Fukuda ,  Yasushi Tanaka ,  Masayuki Yamato ,  Yoshikazu Takada

Inventor： Masahiro Abe ,  Kazuhisa Okada ,  Shuzo Fukuda ,  Yasushi Tanaka ,  Masayuki Yamato ,  Yoshikazu Takada

IPC: C21D8/12 ,  C23C10/08 ,  C23C16/24 ,  C23C16/54 ,  C23C16/56 ,  H01F1/147

CPC classification number: C23C16/56 ,  C21D8/1255 ,  C23C16/24 ,  H01F1/14775 ,  H01F1/14783

Abstract: The present invention relates to a method for producing high silicon steel strip in a continuous treatment line through chemical vapor deposition (called "CVD" hereinafter), wherein the steel strip is subjected continuously to siliconization at temperatures between 1023.degree. and 1200.degree. C. by CVD in a non-oxidizing gas atmosphere containing SiCl.sub.4 between 5% and 35% in molar fraction. Subsequently a diffusion treatment is performed in a non-oxidizing gas atmosphere not containing SICl.sub.4 for diffusing Si uniformly throughout the steel strip, which is then cooled and coiled. If required, the steel strip may be coated with an insolating film and subjected to a baking treatment, before cooling and coiling.

Abstract translation: 本发明涉及通过化学气相沉积（称为“CVD”）在连续处理线中生产高硅钢带的方法，其中钢带在1023℃和1200℃之间的温度下连续进行硅化，由 在含有SiCl 4的摩尔分数为5％至35％的非氧化性气体气氛中进行CVD。 随后，在不含SIC14的非氧化性气体气氛中进行扩散处理，以均匀地将Si均匀地扩散到钢带上，然后将其冷却并盘绕。 如果需要，可以在冷却和卷取之前，用剥离膜涂覆钢带并进行烘烤处理。

公开(公告)号：US5000679A

公开(公告)日：1991-03-19

申请号：US315991

申请日：1989-02-27

Applicant: Shuzo Fukuda ,  Masahiro Abe ,  Shiro Fukunaka ,  Michio Nakayama ,  Koichiro Arima ,  Shunichi Sugiyama ,  Koji Matsui

Inventor： Shuzo Fukuda ,  Masahiro Abe ,  Shiro Fukunaka ,  Michio Nakayama ,  Koichiro Arima ,  Shunichi Sugiyama ,  Koji Matsui

IPC: F23D14/24

CPC classification number: F23D14/24 ,  F23C2900/07002

Abstract: A burner for directly flaming steel making materials to accomplish reduction without oxidation, wherein the burner comprises a plurality of combusion air outlets spaced circumferentially of the inner wall of a tubular burner tile, and fuel gas outlets disposed centrally of the burner tile, and wherein the combustion air outlets and fuel gas outlets are formed and disposed with specified jetting angles and distances to produce burning without oxidation.

公开(公告)号：US4740242A

公开(公告)日：1988-04-26

申请号：US940579

申请日：1986-12-11

Applicant: Hideo Nakamura ,  Kenji Takahashi ,  Akichika Ozeki ,  Shunichi Sugiyama ,  Masahiro Abe ,  Takanori Anzai

Inventor： Hideo Nakamura ,  Kenji Takahashi ,  Akichika Ozeki ,  Shunichi Sugiyama ,  Masahiro Abe ,  Takanori Anzai

IPC: C21B11/08 ,  C21B13/10 ,  C21C5/28 ,  C21C5/30 ,  C21C5/32 ,  C21C5/35 ,  C21C5/40 ,  C21C7/00

CPC classification number: C21C5/40 ,  C21C5/32 ,  C21C5/35 ,  C21C7/0081 ,  Y02P10/265

Abstract: A method and an apparatus, wherein heat can be effectively transferred to molten metal contained in a reaction vessel. The pressure of the gaseous atmosphere within the vessel is maintained higher than atmospheric pressure. Oxygen gas is blown to a layer of molten slag contained in the vessel through tuyeres set in the reaction vessel, thereby to achieve post-combustion therein. The pressure in the vessel is controlled within the range of 2.0 to 5.0 kg/cm.sup.2 by a pressure regulator.

Abstract translation: 一种方法和装置，其中可以将热量有效地转移到包含在反应容器中的熔融金属。 容器内气态气体的压力保持高于大气压。 通过设置在反应容器中的风嘴将氧气吹送到容器中包含的熔渣中，从而在其中实现后燃烧。 通过压力调节器将容器中的压力控制在2.0至5.0kg / cm 2的范围内。

公开(公告)号：US4530991A

公开(公告)日：1985-07-23

申请号：US541022

申请日：1983-10-12

Applicant: Kiyomiki Hirai ,  Koji Takeuchi ,  Nobuo Ito ,  Masahiro Abe

Inventor： Kiyomiki Hirai ,  Koji Takeuchi ,  Nobuo Ito ,  Masahiro Abe

IPC: C07C243/34 ,  C07C67/00 ,  C07C241/00 ,  C08G59/00 ,  C08G59/40 ,  C08G59/44 ,  C08G59/50 ,  C07C109/097

CPC classification number: C08G59/4035 ,  C07C243/34

Abstract: Hydrazides of the formula (I) or (II)N--CH.sub.2 CH.sub.2 CONHNH.sub.2).sub.3 (I)(NH.sub.2 NHCOCH.sub.2 CH.sub.2).sub.2 N--R--N--CH.sub.2 CH.sub.2 CONHNH.sub.2).sub.2 (II)are good latent curing agents for epoxy resin, in the formula (II) R is divalent hydrocarbon residue having 2-24 carbon atoms. The curing agents are useful in formulating novel storable one-package, heat-curable epoxy resin-based compositions.

Abstract translation: 式（I）或（II）中的酰肼N-CH2CH2CONHNH2）3（I）（NH2NHCOCH2CH2）2N-RN-CH2CH2CONHNH2）2（Ⅱ）是环氧树脂的良好潜在性固化剂，式（II）中R为二价 具有2-24个碳原子的烃残基。 固化剂可用于配制新型可储存的单组分，可热固化的环氧树脂基组合物。

公开(公告)号：US4520041A

公开(公告)日：1985-05-28

申请号：US548440

申请日：1983-11-03

Applicant: Masaharu Aoyama ,  Masahiro Abe ,  Takashi Ajima ,  Toshio Yonezawa

Inventor： Masaharu Aoyama ,  Masahiro Abe ,  Takashi Ajima ,  Toshio Yonezawa

IPC: H01L21/3205 ,  H01L21/306 ,  H01L21/768 ,  H01L23/532 ,  H01L21/283 ,  H01L21/302

CPC classification number: H01L23/53295 ,  H01L21/7684 ,  H01L23/5329 ,  H01L2924/0002

Abstract: A metallization structure having a substantially flat surface can be formed on a semiconductor substrate by forming first and second insulating layers on the substrate. The second insulating layer is selectively removed to form grooves therein. Then, a metallic material layer is conformably formed. The metallic layer has grooves corresponding to the grooves of the second insulating layer. A flowable polymer is applied to the surface of the resultant structure to form a layer having a flat surface. The polymer layer and the metallic layer are sequentially ion-etched to expose the second insulating layer. Thus, the metallization structure constituted by the remaining metallic layer and the second insulating layer is formed to have a flat surface.

Abstract translation: 通过在衬底上形成第一绝缘层和第二绝缘层，可以在半导体衬底上形成具有基本平坦表面的金属化结构。 选择性地去除第二绝缘层以在其中形成凹槽。 然后，顺应地形成金属材料层。 金属层具有与第二绝缘层的槽对应的槽。 将可流动的聚合物施加到所得结构的表面以形成具有平坦表面的层。 依次离子蚀刻聚合物层和金属层以露出第二绝缘层。 因此，由剩余的金属层和第二绝缘层构成的金属化结构形成为具有平坦的表面。

公开(公告)号：US4502207A

公开(公告)日：1985-03-05

申请号：US562212

申请日：1983-12-16

Applicant: Jiro Ohshima ,  Masahiro Abe ,  Yutaka Koshino

Inventor： Jiro Ohshima ,  Masahiro Abe ,  Yutaka Koshino

IPC: H01L21/3215 ,  H01L23/532 ,  H01L21/28

CPC classification number: H01L23/53219 ,  H01L21/3215 ,  H01L2924/0002 ,  Y10T428/12528

Abstract: A wiring material of a semiconductor device, which comprises aluminum as a major component and at least a surface layer of the wiring layer is alloyed with boron and silicon. A method for forming a wiring material of a semiconductor device, which comprises the steps of: forming a wiring pattern comprising aluminum as a major component on a semiconductor element; and ion-implanting one of boron and a mixture of boron and silicon in the wiring pattern and alloying at least a surface layer of the wiring pattern to form an alloy layer containing aluminum, boron and silicon.

Abstract translation: 包含铝作为主要成分的半导体器件的布线材料和布线层的至少表面层与硼和硅合金化。 一种形成半导体器件布线材料的方法，包括以下步骤：在半导体元件上形成包含铝作为主要成分的布线图案; 并在布线图案中离子注入硼和硼与硅的混合物中的一种，并在布线图案的至少表面层合金化，形成含有铝，硼和硅的合金层。

公开(公告)号：US4285511A

公开(公告)日：1981-08-25

申请号：US158087

申请日：1980-06-10

Applicant: Masahiro Abe

Inventor： Masahiro Abe

IPC: B65H29/18 ,  B65G57/30 ,  B65H29/14 ,  G07D9/00 ,  B65H29/40

CPC classification number: B65H31/06 ,  B65G57/308 ,  B65H29/14 ,  B65H2301/42142 ,  B65H2701/1912

Abstract: A plurality of coplanar belt conveyors extend in parallel spaced relationship to each other to feed successive sheets to be stacked into a stacking compartment formed on the conveyors. Just upstream of the stacking compartment, one or more endless belts are loosely engaged about pulleys so as to provide free, deformable loops normally lying crosswise with the belt conveyors. Pressed by each sheet being transported by the belt conveyors, the free belt loops engage the upstream edge of an existing stack of sheets in the stacking compartment and raise same away from the conveyors, thereby permitting the new sheet to be fed under the existing sheet stack. The free belt loops can be subsequently withdrawn from between the sheet stack and the new sheet as the belts are revolved about the pulleys in a specific direction. In another embodiment the belts are nonrotatably supported, and a pullout rod extends through their free loops. The free belt loops are withdrawn from between the sheet stack and each new sheet in the stacking compartment upon movement of the pullout rod away from the belt conveyors.

Abstract translation: 多个共面的带式输送机彼此平行间隔地延伸，以将连续的片材进给以堆叠成形成在输送机上的堆叠隔间。 在堆叠隔间的上游，一个或多个环形带松动地接合在滑轮周围，以便提供通常与带式输送机交叉的自由的可变形环。 由带式输送机输送的每张纸张压紧时，自由带环与堆叠隔间内现有的纸叠层的上游边缘接合，并将其从输送机上提升，从而允许新纸张在现有纸张堆叠下进给 。 随着皮带围绕皮带轮沿特定方向旋转，随后的带环可随后从纸叠与新纸之间拉出。 在另一个实施例中，带是不可旋转地支撑的，并且拉出杆延伸通过它们的自由环。 当拉出杆远离皮带输送机移动时，自由皮带环从片材叠片和堆叠隔间中的每个新的片材之间撤出。