公开(公告)号：US20070290246A1

公开(公告)日：2007-12-20

申请号：US11838600

申请日：2007-08-14

申请人： Hongyong Zhang ,  Masayuki Sakakura ,  Yurika Satou

发明人： Hongyong Zhang ,  Masayuki Sakakura ,  Yurika Satou

IPC分类号： H01L31/113

CPC分类号： H01L27/14643 ,  G02F1/1345 ,  G02F1/136286 ,  G02F2001/13312 ,  H01L27/124 ,  H01L27/14634

摘要： To fabricate an active matrix type display device integrated with an image sensor at a low cost and without complicating process, an image sensor laminated with TFT and a light receiving unit is formed on a light receiving matrix, a display matrix is arranged with TFT and pixel electrodes on a matrix and formed with an electrode layer functioning as a black matrix, a lower electrode of the light receiving unit is formed by a starting film the same as that of the black matrix, a terminal for fixing potential of an upper electrode is formed by starting films the same as those of a signal line, the electrode layer or pixel electrodes and the terminals function also as shield electrodes for a side face of the light receiving unit since potential thereof is fixed.

摘要翻译： 为了以低成本制造与图像传感器集成的有源矩阵型显示装置，并没有复杂的过程，在光接收矩阵上形成层叠有TFT和光接收单元的图像传感器，显示矩阵布置有TFT和像素 形成有用作黑矩阵的电极层的电极，受光单元的下电极由与黑矩阵相同的起始膜形成，形成用于固定上电极的电位的端子 通过开始与信号线相同的膜，电极层或像素电极和端子也用作光接收单元的侧面的屏蔽电极，因为其电位固定。

公开(公告)号：US20070249084A1

公开(公告)日：2007-10-25

申请号：US11812528

申请日：2007-06-19

申请人： Hongyong Zhang ,  Masayuki Sakakura

发明人： Hongyong Zhang ,  Masayuki Sakakura

IPC分类号： H01L31/00

CPC分类号： H01L27/1214 ,  G02F1/13454 ,  G02F2001/13312 ,  G02F2001/13324 ,  H01L27/142 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14665 ,  H01L27/14678 ,  H01L27/14687 ,  H01L27/14692 ,  H01L31/02164 ,  Y02E10/50

摘要： In an active matrix display device integrated with peripheral drive circuits, an image sensor is provided on the same substrate as a pixel matrix and peripheral drive circuits. The image sensor is formed on the substrate having pixel electrodes, pixel TFTs connected to the pixel electrodes and CMOS-TFTs for driving the pixel TFTs. The light receiving unit of the image sensor has light receiving elements having a photoelectric conversion layer and light receiving TFTs. These TFTs are produced in the same step. The lower electrode and transparent electrode of the light receiving element are produced by patterning the same film as the light shielding film and the pixel electrodes arranged in the pixel matrix.

摘要翻译： 在与外围驱动电路集成的有源矩阵显示装置中，图像传感器设置在与像素矩阵和外围驱动电路相同的基板上。 图像传感器形成在具有像素电极的基板上，连接到像素电极的像素TFT和用于驱动像素TFT的CMOS-TFT。 图像传感器的光接收单元具有光接收元件和光接收TFT。 这些TFT以相同的步骤制造。 光接收元件的下电极和透明电极通过图案化与遮光膜和排列在像素矩阵中的像素电极相同的膜来制造。

公开(公告)号：US20070153177A1

公开(公告)日：2007-07-05

申请号：US11641516

申请日：2006-12-19

申请人： Hongyong Zhang ,  Masayuki Sakakura

发明人： Hongyong Zhang ,  Masayuki Sakakura

IPC分类号： G02F1/133

CPC分类号： G06F1/1616 ,  G02F1/133 ,  G02F1/1339 ,  G02F1/1362 ,  G02F1/136277 ,  G02F2001/13312 ,  G06F1/1637 ,  G06F1/1686

摘要： A liquid crystal display apparatus containing an image sensor, which comprises a liquid crystal display part comprising an active matrix circuit, a peripheral driver circuit for driving the active matrix circuit, and a sensor part, integrated on one substrate, wherein the sensor part is sealed and protected with a sealing part and a counter substrate.

公开(公告)号：US07148506B2

公开(公告)日：2006-12-12

申请号：US11113294

申请日：2005-04-25

申请人： Hongyong Zhang

发明人： Hongyong Zhang

IPC分类号： H01L29/04 ,  G02F1/136

CPC分类号： H01L27/12 ,  G02F1/13624 ,  G02F2001/13685 ,  G09G3/3648 ,  G09G2300/0809 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2300/0852 ,  G09G2320/0214 ,  H01L27/124 ,  H01L29/78621 ,  H01L29/78645 ,  H01L29/78696

摘要： A liquid crystal device having a source line over a substrate, a gate line over the substrate, and a plurality of pixels or a pixel electrode over the substrate. A plurality of pixels may be arranged in a matrix array at intersections of source lines and gate lines. Each of a plurality of pixels may have first and second thin film transistors, a pixel electrode, and a light source. A portion of one of the source lines may cover a first thin film transistor so that the first thin film transistor is light shielded while a second transistor may not be covered by any portion of one of the source lines.

摘要翻译： 一种在衬底上具有源极线，在该衬底上方的栅极线以及该衬底上的多个像素或像素电极的液晶器件。 多个像素可以在源极线和栅极线的交叉处以矩阵阵列布置。 多个像素中的每一个可以具有第一和第二薄膜晶体管，像素电极和光源。 源极线之一的一部分可以覆盖第一薄膜晶体管，使得第一薄膜晶体管被屏蔽，而第二晶体管可能不被源极线之一的任何部分覆盖。

公开(公告)号：US07102164B2

公开(公告)日：2006-09-05

申请号：US10929722

申请日：2004-08-31

申请人： Hongyong Zhang

发明人： Hongyong Zhang

IPC分类号： H01L29/04

CPC分类号： G02F1/136227 ,  H01L27/124 ,  H01L29/66757 ,  H01L29/78633

摘要： A semiconductor device having a substrate: a semiconductor film having at least two impurity regions, and at least one channel forming region; a gate insulating film; a gate electrode; an interlayer insulating film having an organic resin; a first conductive layer connected with one of the at least two impurity regions of the semiconductor film, where the first conductive layer has a light shielding part overlapping with at least the channel forming region; a pixel electrode; and a second conductive layer electrically connected with the other one of the at least two impurity regions, where the first and second conductive avers and the pixel electrode are provided on a same surface over the interlayer insulating film and the pixel electrode is electrically connected to the other one of the two impurity regions through the second conductive layer.

摘要翻译： 一种具有衬底的半导体器件：具有至少两个杂质区的半导体膜和至少一个沟道形成区; 栅极绝缘膜; 栅电极; 具有有机树脂的层间绝缘膜; 与半导体膜的至少两个杂质区中的一个连接的第一导电层，其中第一导电层具有与至少沟道形成区重叠的遮光部; 像素电极; 以及与所述至少两个杂质区域中的另一个电连接的第二导电层，其中所述第一和第二导电栅极和所述像素电极设置在所述层间绝缘膜上的同一表面上，并且所述像素电极电连接到 通过第二导电层的两个杂质区域中的另一个。

公开(公告)号：US20060194377A1

公开(公告)日：2006-08-31

申请号：US11321641

申请日：2005-12-30

申请人： Shunpei Yamazaki ,  Hongyong Zhang ,  Hiroaki Ishihara

发明人： Shunpei Yamazaki ,  Hongyong Zhang ,  Hiroaki Ishihara

IPC分类号： H01L21/84 ,  H01L21/20 ,  H01L21/425

CPC分类号： G02B27/09 ,  C23C14/58 ,  C23C14/5813 ,  C23C16/56 ,  G02B27/0966 ,  H01L21/2022 ,  H01L21/2026 ,  H01L21/26513 ,  H01L21/268 ,  H01L21/84 ,  H01L27/1285

摘要： A laser annealing process for recovering crystallinity of a deposited semiconductor film such as of silicon which had undergone morphological damage, said process comprising activating the semiconductor by irradiating a pulsed laser beam operating at a wavelength of 400 nm or less and at a pulse width of 50 nsec or less onto the surface of the film, wherein, said deposited film is coated with a transparent film such as a silicon oxide film at a thickness of from 3 to 300 nm, and the laser beam incident to said coating is applied at an energy density E (mJ/cm2) provided that it satisfies the relation: log10N≦−0.02(E−350), where N is the number of shots of the pulsed laser beam.

摘要翻译： 一种激光退火工艺，用于回收沉积的半导体膜（例如已经形成损伤的硅）的半导体膜的结晶度，所述方法包括通过照射在400nm或更小的波长下以脉冲宽度为50的脉冲激光束来激活半导体 nsec以下，其中，所述沉积膜涂覆有厚度为3至300nm的诸如氧化硅膜的透明膜，并且入射到所述涂层的激光束以能量施加 密度E（mJ / cm 2），条件是其满足关系：<？in-line-formula description =“In-line Formulas”end =“lead”？> log 10 < /SUB>N<=-0.02(E-350），<？in-line-formula description =“In-line Formulas”end =“tail”？>其中N是脉冲激光束的镜头数。

公开(公告)号：US07071912B2

公开(公告)日：2006-07-04

申请号：US10631731

申请日：2003-08-01

申请人： Hongyong Zhang ,  Yosuke Tsukamoto ,  Yutaka Takafuji ,  Yasushi Kubota

发明人： Hongyong Zhang ,  Yosuke Tsukamoto ,  Yutaka Takafuji ,  Yasushi Kubota

IPC分类号： G09G3/36

CPC分类号： G09G3/3688 ,  G09G3/3677

摘要： A display panel drive circuit and a display panel are provided which are simple in structure but free from initial failure leading to impossibility to perform scanning. The display panel drive circuit of the present invention is structured such that thin film transistors constituting a signal input circuit connected to a circuit outside the display panel are formed in a structure having a dielectric breakdown strength higher than those of thin film transistors constituting other circuits. Specifically, countermeasures are taken by transistor formation in multi-gate structure, gate width broadening, resistance insertion between an input terminal and a transistor or the like. In the present invention, the circuit to which signals are externally inputted or thin film transistors of the same circuit is structured to withstand high voltage, thereby preventing the transistors from being deteriorated by high voltage and occurrence of initial failure while being simple in structure.

公开(公告)号：US20060121657A1

公开(公告)日：2006-06-08

申请号：US11330136

申请日：2006-01-12

申请人： Hongyong Zhang

发明人： Hongyong Zhang

IPC分类号： H01L21/84

CPC分类号： H01L21/02667 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02631 ,  H01L21/2022 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/78603

摘要： A semiconductor device is manufactured by the use of a glass substrate which has previously been heated. An amorphous semiconductor layer is formed on the previously heated glass substrate and then crystallized by heat. By virtue of the previous heating, shrink of the glass substrate after the crystallization process is reduced. Accordingly, internal stress is not generated in the crystallized semiconductor layer. The semiconductor device thus manufactured is superior in electrical property.

摘要翻译： 通过使用预先加热的玻璃基板来制造半导体器件。 在预先加热的玻璃基板上形成非晶半导体层，然后通过加热结晶。 由于先前的加热，结晶过程之后的玻璃基板的收缩减少。 因此，在结晶化的半导体层中不产生内应力。 由此制造的半导体装置的电气性优异。

公开(公告)号：US07042548B2

公开(公告)日：2006-05-09

申请号：US11074020

申请日：2005-03-08

申请人： Hongyong Zhang ,  Masayuki Sakakura ,  Hideaki Kuwabara

发明人： Hongyong Zhang ,  Masayuki Sakakura ,  Hideaki Kuwabara

IPC分类号： G02F1/13 ,  H01L29/04

CPC分类号： H04N1/00129 ,  G02F1/133345 ,  G02F1/135 ,  G02F1/136227 ,  G02F1/13624 ,  G02F1/136286 ,  G02F2001/13312 ,  G02F2001/13629 ,  H01L27/12 ,  H01L27/14665 ,  H04M1/0264 ,  H04M1/0266 ,  H04N1/00127 ,  H04N1/028 ,  H04N1/02805

摘要： A display device using a novel semiconductor device, which includes a pixel matrix, an image sensor, and a peripheral circuit for driving those, that is, which has both a camera function and a display function, and is made intelligent is provided and a method of manufacturing the same is also provided. One pixel includes a semiconductor device for display and a semiconductor for light reception, that is, one pixel includes semiconductor devices (insulated gate-type field effect semiconductor device) for controlling both display and light reception, so that the display device having a picture reading function is made miniaturized and compact.

摘要翻译： 提供了一种使用新颖的半导体器件的显示装置，其包括像素矩阵，图像传感器和用于驱动它们的外围电路，即具有相机功能和显示功能，并且是智能的。 也提供制造相同的。 一个像素包括用于显示的半导体器件和用于光接收的半导体，即，一个像素包括用于控制显示和光接收的半导体器件（绝缘栅型场效应半导体器件），使得具有图像读取的显示器件 功能小型化，小巧化。

公开(公告)号：US20060011995A1

公开(公告)日：2006-01-19

申请号：US11229651

申请日：2005-09-20

申请人： Shunpei Yamazaki ,  Hongyong Zhang

发明人： Shunpei Yamazaki ,  Hongyong Zhang

IPC分类号： H01L29/94 ,  H01L27/12 ,  H01L29/76

CPC分类号： H01L21/02164 ,  C23C14/10 ,  H01L21/02131 ,  H01L21/02211 ,  H01L21/02266 ,  H01L21/02274 ,  H01L21/28158 ,  H01L21/31612 ,  H01L21/31629 ,  H01L29/4908 ,  H01L29/66757

摘要： A method of forming an oxide film and a method of manufacturing an electronic device utilizing the oxide film is disclosed. A silicon oxide film is formed on a substrate by sputtering. Therefore, the film formation is carried out at a low temperature. The sputtering atmosphere . comprises an oxidizing gas and an inert gas such as argon. In order to prevent fixed electric charges from being generated in the film and to obtain an oxide film of good properties, the proportion of argon is adjusted to 20% or less. Alternatively, a gas including halogen elements such as fluorine is added to the above sputtering atmosphere at a proportion less than 20%. Hereupon, alkali ions and dangling bonds of silicon in the oxide film are neutralized by the halogen elements, whereby a fine oxide film is obtained.

摘要翻译： 公开了一种形成氧化膜的方法和利用该氧化膜制造电子器件的方法。 通过溅射在衬底上形成氧化硅膜。 因此，在低温下进行成膜。 溅射气氛。 包括氧化气体和惰性气体如氩气。 为了防止在膜中产生固定电荷并获得具有良好性能的氧化膜，将氩的比例调节到20％以下。 或者，将含有卤素元素如氟的气体以小于20％的比例加入到上述溅射气氛中。 因此，氧化膜中的硅的碱离子和悬挂键被卤素元素中和，得到细小的氧化膜。