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    Thin-film transistor liquid-crystal display with variable frame frequency
    91.
    发明授权
    Thin-film transistor liquid-crystal display with variable frame frequency 有权
    具有可变帧频率的薄膜晶体管液晶显示器

    公开(公告)号：US08730226B2

    公开(公告)日：2014-05-20

    申请号：US13270140

    申请日：2011-10-10

    Applicant: Willem den Boer

    Inventor： Willem den Boer

    IPC: G06F3/038

    CPC classification number: G02F1/136213 ,  G02F1/13624 ,  G09G3/3648 ,  G09G2300/0456 ,  G09G2300/0876 ,  G09G2320/103 ,  G09G2330/021 ,  G09G2340/0435

    Abstract: An active matrix includes an array of pixels individually addressable over a first frame-frequency range and over a second, higher frame-frequency range. The active matrix also includes, for each pixel of the array, a charging circuit through which that pixel is addressed. Each charging circuit includes an adjustable storage capacitance and is configured such that the storage capacitance is maintained at a first level over the first frame-frequency range, and at a second, lower level over the second frame-frequency range.

    Abstract translation: 有源矩阵包括可在第一帧频率范围和第二较高帧频范围上分别寻址的像素阵列。 对于阵列的每个像素，有源矩阵还包括该像素被寻址的充电电路。 每个充电电路包括可调整的存储电容，并且被配置为使得存储电容在第一帧频范围上保持在第一电平，并且在第二帧频范围上保持在第二较低电平。

    Method of making glass including surface treatment with aluminum chloride at or just prior to annealing LEHR
    92.
    发明授权
    Method of making glass including surface treatment with aluminum chloride at or just prior to annealing LEHR 有权
    制造玻璃的方法，包括在退火LEHR之前或之前用氯化铝进行表面处理

    公开(公告)号：US08677782B2

    公开(公告)日：2014-03-25

    申请号：US11878318

    申请日：2007-07-23

    Applicant: Bernd Disteldorf ,  Willem den Boer

    Inventor： Bernd Disteldorf ,  Willem den Boer

    IPC: C03C17/09

    CPC classification number: C03C23/00 ,  C03C3/087 ,  C03C17/22 ,  C03C21/00 ,  C03C21/005 ,  C03C23/0095 ,  C03C2217/214

    Abstract: This invention relates to a method of making glass. In certain example embodiments, a major surface(s) of the glass is treated with aluminum chloride (e.g., AlCl3) at or just prior to the annealing lehr. The aluminum chloride treatment at or just prior to the annealing lehr, in either a float or patterned line glass making process, is advantageous in that it allows the treatment to be performed at a desirable glass temperature and permits exhaust functions in or proximate the annealing lehr to remove byproducts of the treatment in an efficient manner. In certain example embodiments, the glass may be polished for thinning after the treatment, with the polishing being performed on a major surface of the glass opposite to a major surface which has been treated with aluminum chloride.

    Abstract translation: 本发明涉及制造玻璃的方法。 在某些示例性实施方案中，玻璃的主表面在退火退火炉之前或之前用氯化铝（例如AlCl 3）处理。 退火退火之前或之前的氯化铝处理在浮法或图案化线玻璃制造工艺中是有利的，因为其允许在期望的玻璃温度下进行处理，并允许退火退火炉中或其附近的排气功能 以有效的方式去除治疗的副产物。 在某些示例性实施例中，可以在处理之后对玻璃进行抛光以进行减薄，在与用氯化铝处理的主表面相对的玻璃的主表面上进行抛光。

    Image sensor with photosensitive thin film transistors and dark current compensation
    94.
    发明授权
    Image sensor with photosensitive thin film transistors and dark current compensation 失效
    具有感光薄膜晶体管和暗电流补偿的图像传感器

    公开(公告)号：US08289429B2

    公开(公告)日：2012-10-16

    申请号：US12852883

    申请日：2010-08-09

    Applicant: Willem den Boer ,  Tin Nguyen ,  Patrick J. Green

    Inventor： Willem den Boer ,  Tin Nguyen ,  Patrick J. Green

    IPC: H04N3/14 ,  H04N5/335

    CPC classification number: H01L31/0224 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14663 ,  H01L27/14692 ,  H04N5/32

    Abstract: An image sensor array includes image sensors having photo TFTs to generate photocurrent in response to received images. The photo TFTs each have their respective gate electrodes and source electrodes independently biased to reduce the effects of dark current. Storage capacitors are coupled to each photo TFT and discharged upon generation of a photocurrent. Each storage capacitor is coupled to a readout TFT that passes a current from the storage capacitor to a data line. The photo TFT may be disposed above the storage capacitor to increase the exposed surface area of the photo TFT.

    Abstract translation: 图像传感器阵列包括具有光TFT的图像传感器，以响应于接收的图像产生光电流。 各个光电TFT分别具有各自的栅电极和源电极偏置以减少暗电流的影响。 存储电容器耦合到每个光电TFT并且在产生光电流时放电。 每个存储电容器耦合到将电流从存储电容器传递到数据线的读出TFT。 光电TFT可以设置在存储电容器的上方，以增加照片TFT的暴露的表面积。

    Thin-Film Transistor Liquid-Crystal Display with Variable Frame Frequency
    95.
    发明申请
    Thin-Film Transistor Liquid-Crystal Display with Variable Frame Frequency 有权
    具有可变帧频率的薄膜晶体管液晶显示器

    公开(公告)号：US20120113080A1

    公开(公告)日：2012-05-10

    申请号：US13270140

    申请日：2011-10-10

    Applicant: Willem den Boer

    Inventor： Willem den Boer

    IPC: G09G3/36 ,  G06F3/038

    CPC classification number: G02F1/136213 ,  G02F1/13624 ,  G09G3/3648 ,  G09G2300/0456 ,  G09G2300/0876 ,  G09G2320/103 ,  G09G2330/021 ,  G09G2340/0435

    Abstract: An active matrix includes an array of pixels individually addressable over a first frame-frequency range and over a second, higher frame-frequency range. The active matrix also includes, for each pixel of the array, a charging circuit through which that pixel is addressed. Each charging circuit includes an adjustable storage capacitance and is configured such that the storage capacitance is maintained at a first level over the first frame-frequency range, and at a second, lower level over the second frame-frequency range.

    Abstract translation: 有源矩阵包括可在第一帧频率范围和第二较高帧频范围上分别寻址的像素阵列。 对于阵列的每个像素，有源矩阵还包括该像素被寻址的充电电路。 每个充电电路包括可调整的存储电容，并且被配置为使得存储电容在第一帧频范围上保持在第一电平，并且在第二帧频范围上保持在第二较低电平。

    Front electrode including transparent conductive coating on patterned glass substrate for use in photovoltaic device and method of making same
    96.
    发明授权
    Front electrode including transparent conductive coating on patterned glass substrate for use in photovoltaic device and method of making same 有权
    包括用于光伏器件的图案化玻璃基板上的透明导电涂层的前电极及其制造方法

    公开(公告)号：US08012317B2

    公开(公告)日：2011-09-06

    申请号：US11790687

    申请日：2007-04-26

    Applicant: Yiwei Lu ,  Willem den Boer

    Inventor： Yiwei Lu ,  Willem den Boer

    IPC: C23C14/34

    CPC classification number: H01L31/0236 ,  H01L31/022425 ,  H01L31/022466 ,  H01L31/02366 ,  H01L31/048 ,  H01L31/0488 ,  H01L31/075 ,  H01L31/1884 ,  Y02E10/548

    Abstract: This invention relates to a photovoltaic device including an electrode such as a front electrode/contact. In certain example embodiments, the front electrode of the photovoltaic device includes a multi-layered transparent conductive coating which is sputter-deposited on a textured surface of a patterned glass substrate. In certain example embodiments, a maximum transmission area of the substantially transparent conductive front electrode is located under a peak area of a quantum efficiency (QE) curve of the photovoltaic device and a light source spectrum used to power the photovoltaic device.

    Abstract translation: 本发明涉及包括诸如前电极/触点的电极的光伏器件。 在某些示例性实施例中，光伏器件的前电极包括多层透明导电涂层，其被溅射沉积在图案化玻璃衬底的纹理表面上。 在某些示例性实施例中，基本透明的导电前电极的最大透射面积位于光伏器件的量子效率（QE）曲线的峰值区域和用于为光伏器件供电的光源光谱之下。

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