Abstract:
An electrode-forming composition comprising a binder component containing a solvent-soluble polyimide silicone and an epoxy compound, and an electrically conductive material can be cured and bonded to a current collector at a relatively low temperature and has excellent adhesion and chemical resistance, facilitating the manufacture of lithium ion batteries and electrical double-layer capacitors of various shapes.
Abstract:
A polyimide silicone resin which is obtained from a diamine containing an acid dianhydride and a diaminopolysiloxane, contains 50% by weight or more of a siloxane residual group and has an elongation at rupture of 400% or higher and a modulus of elasticity of 500 N/mm2 or lower. Also disclosed are a polyimide silicone resin solution composition comprising this polyimide silicone resin and a ketone solvent having a boiling point of 130° C. or below, and a polyimide silicone resin film comprising this polyimide silicone resin and formed on a substrate. The polyimide silicone resin can form films at relatively low temperature, has superior adhesiveness to substrates and durability under conditions of high humidity and also has low stress and high elongation.
Abstract translation:由含有酸二酐和二氨基聚硅氧烷的二胺获得的聚酰亚胺硅树脂含有50重量%以上的硅氧烷残基,断裂伸长率在400%以上,弹性模量为500N / mm 2以下。 还公开了包含该聚酰亚胺硅树脂和沸点为130℃以下的酮溶剂的聚酰亚胺硅树脂溶液组合物和形成在基材上的聚酰亚胺硅树脂薄膜。 聚酰亚胺硅树脂可以在较低温度下形成薄膜,在高湿度条件下具有优异的基材粘合性和耐久性,并且应力低和伸长率高。
Abstract:
A resist composition comprising (A) an alkali-insoluble or substantially insoluble polymer having acidic functional groups protected with acid labile groups, which polymer becomes alkali-soluble upon elimination of the acid labile groups, (B) a photoacid generator, and (C) a 1,2-naphthoquinonediazidosulfonyl group-bearing compound has a high resolution and sensitivity, and provides resist patterns of excellent plating resistance when used in UV lithography at an exposure light wavelength of at least 300 nm.
Abstract:
An electrostatic capacity sensor includes an electrostatic capacity type detection element in which a detection electrode, a ground electrode and a charge plate interposed between the detection electrode and the ground electrode are arranged in a state that they are isolated to each other; a detection circuit for detecting changes in capacitance of the detection electrode caused by an object to be detected; and a power supply for supplying electrical power to the detection circuit. Since the electrostatic capacity sensor is provided with the charge plate between the detection electrode and the charge plate, it is possible to improve the sensitivity of the detection element, so that it is possible to increase the detection distance. In addition, the variations in the capacitance of the detection element due to the changes in the ambient conditions can be reduced. In this way, the ratio of signal to noise (the ratio of S/N) can be increased, thereby enabling to improve the detection precision of the electrostatic capacity sensor.
Abstract:
A novel polymer is provided in the form of a novolac resin in which some of the hydrogen atoms of hydroxyl groups are replaced by 1,2-naphthoquinonediazidosulfonyl ester groups, triazinyl groups and optionally, substituted carbonyl or sulfonyl groups. A positive resist composition comprising the polymer has improved sensitivity, resolution and developability in microfabrication as well as improved heat resistance and low-temperature curability in forming interlayer insulating film.
Abstract:
A positive resist composition contains (A) a novolak resin having a weight average molecular weight calculated as polystyrene of 2,000-20,000 wherein 2.5-27 mol % of the hydrogen atom of a hydroxyl group is replaced by a 1,2-naphthoquinonediazidosulfonyl group and (B) a low molecular aromatic compound having phenolic hydroxyl groups and 2-20 benzene rings wherein the ratio of the number of phenolic hydroxyl groups to the number of benzene rings is between 0.5 and 2.5. By forming a resist layer on a substrate from the positive resist composition and baking the resist layer at 90-130° C., followed by exposure and development, there is formed a resist pattern having an undercut of desired configuration. Owing to high resolution and improved dimensional control, heat resistance and film retention, the resist pattern lends itself to a lift-off technique.
Abstract:
The composition comprises (A) a specified polyimide precursor and (B) at least one member selected from the group consisting of a sensitizer, a photopolymerization initiator and a combination thereof. The above process comprises applying a solution of the above photosensitive resin composition on a substrate, followed by drying to form a film; exposing the film to light, followed by developing with an aqueous alkaline solution to form a patterned film; and curing the patterned film. The composition has little ionic impurities mixed therein during the preparation of the composition; is excellent in storage stability in the state of a solution; can be developed with an aqueous alkaline solution, which does not cause the problems such as a problem to health and a problem to the treatment of waste liquids, within a short time; and exhibits a good sensitivity even when formed a thick film, thereby readily providing a patterned resinous film. Further, the cured product obtained by curing the patterned film has a superior heat resistance and excellent electrical and mechanical properties, which can be suitably used as a protective film for use in electronic parts.
Abstract:
A polyimide resin is prepared by polymerizing (A) a tetracarboxylic acid dianhydride component consisting essentially of 10 to 50 mol % of 2,2-bis(3,4-benzene-dicarboxylic anhydride)perfluoropropane and 90 to 50 mol % of pyromellitic dianhydride or similar acid dianhydride and (B) a diamine component consisting essentially of 10 to 80 mol % of a silicon diamine and 90 to 20 mol % of an ether diamine. The polyimide resin is dissolved in an organic solvent and blended with finely divided silica to form a composition which is useful for protecting semiconductor elements.
Abstract:
A novel methacrylic acid ester represented by General Formula (I): ##STR1## wherein l is an integer of 1 to 3; m is an integer of 1 to 10; and n is an integer of 1 to 3,and a process for producing the same. This novel methacrylic acid ester is useful for the synthesis of polymers having useful functions such as an oxygen enrichment performance.