公开(公告)号：US12199076B2

公开(公告)日：2025-01-14

申请号：US17619564

申请日：2020-06-25

Applicant: Commissariat à l'Énergie Atomique et aux Énergies Alternatives ,  Aledia ,  Universite Grenoble Alpes

Inventor： Bruno-Jules Daudin ,  Walf Chikhaoui ,  Marion Gruart

IPC: H01L25/075 ,  H01L33/00 ,  H01L33/06 ,  H01L33/14 ,  H01L33/20 ,  H01L33/30 ,  H01L33/32

Abstract: A light-emitting diode manufacturing method including the forming of three-dimensional semiconductor elements, extending along parallel axes, made of a III-V compound, each having a lower portion and a flared upper portion inscribed within a frustum of half apical angle α. The method further comprises, for each semiconductor element, the forming of an active area covering the top of the upper portion and the forming of at least one semiconductor layer of the III-V compound covering the active area by vapor deposition at a pressure lower than 10 mPa, by using a flux of the group-III element along a direction inclined by an angle θIII and a flux of the group-V element along a direction inclined by an angle θV with respect to the vertical axis, angles θIII and θV being smaller than angle α.

公开(公告)号：US20240321843A1

公开(公告)日：2024-09-26

申请号：US18676771

申请日：2024-05-29

Applicant: Aledia

Inventor： Tiphaine Dupont ,  Ivan-Christophe Robin

IPC: H01L25/13 ,  H01L33/20 ,  H01L33/32 ,  H01L33/54 ,  H01L33/58 ,  H01L33/62

CPC classification number: H01L25/13 ,  H01L33/20 ,  H01L33/32 ,  H01L33/54 ,  H01L33/58 ,  H01L33/62 ,  H01L2933/005

Abstract: An optoelectronic device including a support including a face; light-emitting diodes lying on the face and including semiconductor elements in the form of wires, cones or truncated cones; for each light-emitting diode, an encapsulation block at least partially transparent to the radiation emitted by the light-emitting diodes and covering the light-emitting diode, the maximum thickness of the encapsulation block being comprised between 1 μm and 30 μm, interstices of air being present between the encapsulation blocks covering adjacent diodes; and an electrically conductive layer covering the encapsulation blocks, wherein the refractive index of the encapsulation block covering at least one of the light-emitting diodes is comprised between 1.3 and 1.6.

公开(公告)号：US20240287381A1

公开(公告)日：2024-08-29

申请号：US18573268

申请日：2022-06-30

Applicant: ALEDIA

Inventor： Eleonora GARONI ,  Christophe LINCHENEAU

IPC: C09K11/02 ,  B82Y20/00 ,  B82Y40/00 ,  C08K9/04 ,  C09K11/08 ,  C09K11/88 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  H01L33/50

CPC classification number: C09K11/025 ,  C08K9/04 ,  C09K11/0883 ,  C09K11/883 ,  C23C16/403 ,  C23C16/405 ,  C23C16/4417 ,  C23C16/45525 ,  H01L33/502 ,  B82Y20/00 ,  B82Y40/00 ,  C08K2201/011

Abstract: The invention relates to a protected and light-emitting nanoparticle (5a) which is composed of a light-emitting nanoparticle (8a) in the form of a light-emitting core (1), said core (1) being coated with at least one oxidation protection layer (3), said nanoparticle (5a) further comprising a layer (4) formed of second ligands (6) which are grafted to the surface of said oxidation protection layer (3). The invention also relates to a method for producing this nanoparticle (5a) and the use thereof for optoelectronic device radiation converters.

公开(公告)号：US12062643B2

公开(公告)日：2024-08-13

申请号：US17287971

申请日：2019-10-08

Applicant: Aledia

Inventor： Ivan-Christophe Robin ,  Zine Bouhamri ,  Philippe Gilet

IPC: H01L21/78 ,  H01L25/075 ,  H01L33/00 ,  H01L33/62

CPC classification number: H01L25/0753 ,  H01L33/005 ,  H01L33/62 ,  H01L2933/0066

Abstract: A method for manufacturing an electronic device including the following steps: a) forming a wafer of electronic chips; b) fixing the wafer of electronic chips to a first support made of a stretchable material; c) removing and/or etching the wafer; and d) stretching the first support so as to move the chips away from one another.

公开(公告)号：US20240250206A1

公开(公告)日：2024-07-25

申请号：US18564265

申请日：2022-05-19

Applicant: ALEDIA

Inventor： Pierre TCHOULFIAN ,  Benoît AMSTATT ,  Timothée LASSIAZ ,  Yoann MALIER

IPC: H01L33/02 ,  H01L33/00 ,  H01L33/14 ,  H01L33/24 ,  H01L33/32

CPC classification number: H01L33/025 ,  H01L33/007 ,  H01L33/14 ,  H01L33/24 ,  H01L33/32

Abstract: As described, a GaN-based light-emitting diode includes a n-GaN based electron injection region, a p-GaN based hole injection region, an active region located between the electron injection region and the hole injection region, configured to emit a light radiation, a hydrogen blocking layer, the light-emitting diode being wherein the hole injection region includes at least one activated portion and at least one inactivated portion such that the activated portion has an acceptor concentration at least ten times greater than an acceptor concentration of the inactivated portion, and in that the at least one inactivated portion is interposed between the electron injection region and the hydrogen blocking layer, so that the hydrogen blocking layer prevents a release of hydrogen from the inactivated portion. Also described is a method for manufacturing such an LED.

公开(公告)号：US12039922B2

公开(公告)日：2024-07-16

申请号：US18283785

申请日：2022-03-30

Applicant: Aledia

Inventor： Frédéric Mercier

IPC: G09G3/32

CPC classification number: G09G3/32 ,  G09G2310/027 ,  G09G2310/065 ,  G09G2310/08 ,  G09G2330/021 ,  G09G2330/028

Abstract: A display pixel including at least one light-emitting diode, a circuit for driving the light-emitting diode, and first, second, third, and fourth conductive pads. The driver circuit is powered with a first power supply voltage received between the first and second pads. The light-emitting diode is powered with a first binary signal, received between the third and second pads, and alternating between a second power supply voltage, greater than the first voltage, and a third voltage, smaller than the first voltage. The driver circuit is configured to determine a digital signal based on the values of a second binary signal on the fourth pad received during each of first pulses of the first binary signal at the third voltage and to control the light-emitting diode from the digital signal.

公开(公告)号：US12027643B2

公开(公告)日：2024-07-02

申请号：US17232287

申请日：2021-04-16

Applicant: ALEDIA ,  COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： Eric Pourquier ,  Hubert Bono

IPC: H01L33/08 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/02 ,  H01L27/15 ,  H01L29/06 ,  H01L29/12 ,  H01L29/66 ,  H01L33/00 ,  H01L33/06 ,  H01L33/16 ,  H01L33/18 ,  H01L33/24 ,  H01L33/42 ,  H01L33/48 ,  H10B69/00 ,  H01L33/02

CPC classification number: H01L33/06 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/02603 ,  H01L27/15 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/125 ,  H01L29/127 ,  H01L29/6609 ,  H01L29/66469 ,  H01L33/0008 ,  H01L33/0062 ,  H01L33/007 ,  H01L33/0095 ,  H01L33/08 ,  H01L33/16 ,  H01L33/18 ,  H01L33/24 ,  H01L33/42 ,  H01L33/48 ,  H10B69/00 ,  H01L33/02 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A process for producing at least two adjacent regions, each comprising an array of light-emitting wires connected together in a given region by a transparent conductive layer, comprises: producing, on a substrate, a plurality of individual zones for growing wires extending over an area greater than the cumulative area of the two chips; growing wires in the individual growth zones; removing wires from at least one zone forming an initial free area to define the arrays of wires, the initial free area comprising individual growth zones level with the removed wires; and depositing a transparent conductive layer on each array of wires to electrically connect the wires of a given array of wires, each conductive layer being separated from the conductive layer of the neighbouring region by a free area. A device obtained using the process of the invention is also provided.

公开(公告)号：US11929011B2

公开(公告)日：2024-03-12

申请号：US17613253

申请日：2020-05-06

Applicant: ALEDIA

Inventor： Ivan-Christophe Robin ,  Olivier Jeannin ,  Frédéric Mayer

IPC: G09G3/32 ,  G02B3/00 ,  G02B7/02

CPC classification number: G09G3/32 ,  G02B3/0037 ,  G02B7/02 ,  G09G2300/0439 ,  G09G2330/021

Abstract: An optoelectronic device having a set of pixels wherein each pixel has a sub-pixel capable of emitting a primary light beam, a set of pixels each pixel being adjacent to a pixel wherein each secondary pixel has at least one secondary sub-pixel capable of emitting a secondary light beam, a set of optical systems arranged so as to be able to cover an entire pixel belonging to one of the sets and at least part of the sub-pixels of at least one of the adjacent pixels belonging to the other set, the number of pixels being greater than twice the number of optical systems. At least one movement mechanism applies a relative movement between the set and the sets according to a predetermined sequence.

公开(公告)号：US20230343811A1

公开(公告)日：2023-10-26

申请号：US17767608

申请日：2020-10-01

Applicant: ALEDIA

Inventor： Wei Sin TAN ,  Pamela RUEDA FONSECA ,  Pierre TCHOULFIAN

IPC: H01L27/15

CPC classification number: H01L27/156

Abstract: A method of forming a dielectric collar for semiconductor wires includes providing a layers stack and a semiconductor wires (SW) layer on top of the stack, forming a base layer at a lower part of the SW and a capping layer at an upper part of the SW, the base layer parallel to the basal plane and including a dielectric material surrounding the lower part of the SW, and the capping layer along a contour of the SW and including a dielectric material surrounding the upper part of the SW, the base and capping layers having thicknesses e1 and e2 with e1>2.e2, performing anisotropic etching along the direction normal to the basal plane to remove the dielectric material at a top part of the SW and leaving the dielectric material at least in the lower part of the SW.

公开(公告)号：US20230299233A1

公开(公告)日：2023-09-21

申请号：US18016853

申请日：2021-07-16

Applicant: Aledia

Inventor： Ivan-Christophe Robin ,  Frédéric Mayer

IPC: H01L33/20 ,  H01L33/62 ,  H01L33/00 ,  H01L33/48 ,  H01L25/075

CPC classification number: H01L33/20 ,  H01L33/62 ,  H01L33/0004 ,  H01L33/483 ,  H01L25/0753

Abstract: An optoelectronic device including an optoelectronic circuit including light-emitting diodes, thin-film transistors, and a stack of electrically-insulating layers, said stack being located between the light-emitting diodes, and the transistors stack further including conductive elements, between and through the insulating layers, the conductive elements connecting at least some of the transistors to the light-emitting diodes The device further includes a support having a surface, the support being flexible and/or the surface being curved and non-planar, the optoelectronic circuit being connected to the surface on the side of the thin-film transistors.