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公开(公告)号：US20190157593A1
公开(公告)日：2019-05-23
申请号：US16254742
申请日：2019-01-23
Abstract: A method for manufacturing an organic thin film transistor includes steps of: forming a graphene layer on a surface of a metal substrate; covering a surface of the graphene layer with an organic solution and heating the graphene layer to form organic semiconductor nano lines on the surface of the graphene layer; and transferring the organic semiconductor nano lines to a target substrate. The graphene layer is formed on the surface of the metal substrate in mass production. The organic semiconductor nano lines (monocrystalline semiconductor) are grown in mass production by the graphene layer. The semiconductor layer having organic thin film transistors is formed after transferring the organic semiconductor nano lines on the target substrate. A large amount of the organic semiconductor nano lines can be formed simultaneously on the surface of the metal substrate with a large area.
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2.发明申请公开(公告)号：US20190172879A1
公开(公告)日：2019-06-06
申请号：US16258768
申请日：2019-01-28
Inventor： Jhih-jie HUANG , Bo LIANG , Wei WANG
CPC classification number: H01L27/3244 , H01L51/0035 , H01L51/0097 , H01L51/5271 , H01L51/56 , H01L2227/323 , H01L2251/5323 , H01L2251/5338 , Y02E10/549
Abstract: A double-sided organic light-emitting display apparatus includes: a rigid substrate; a transmission flexible substrate and a reflective flexible substrate formed on the rigid substrate; a display substrate having a plurality of switching elements and formed on the transmission flexible substrate and the reflective flexible substrate; and a top-emission OLED light-emitting layer and a bottom-emission OLED light-emitting layer formed on the display substrate. The top-emission OLED light-emitting layer is corresponding to the reflective flexible substrate and the bottom-emission OLED light-emitting layer is corresponding to the transmission flexible substrate. The OLED display apparatus can serve as a double-sided display, and because of the use of the flexible substrate, it also has the advantage of easy carrying and flexibility.
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公开(公告)号：US20180197931A1
公开(公告)日：2018-07-12
申请号：US15325080
申请日：2017-01-07
IPC: H01L27/32 , H01L51/00 , H01L51/05 , G09G3/3233 , H01L51/52
CPC classification number: H01L27/3262 , G09G3/3233 , H01L27/3274 , H01L51/0097 , H01L51/0512 , H01L51/5237 , H01L2251/5338
Abstract: The present invention discloses an OLED display panel and an OLED display apparatus. The OLED display panel includes a display region and a GOA region, the GOA region is provided with at least one first thin film transistor, the display region is provided with at least one second thin film transistor, the first thin film transistor is an inorganic thin film transistor, the second thin film transistor is an organic thin film transistor. The GOA region of the invention adopts an inorganic thin film transistor, can improve the electron mobility and ensure sufficient gate driving current, and the organic thin film transistor is used in the display region to ensure good bending performance of the OLED display panel and to reduce the cost.
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Patent Agency Ranking
公开(公告)号：US20180212096A1
公开(公告)日：2018-07-26
申请号：US15327133
申请日：2017-01-05
CPC classification number: H01L33/007 , H01L27/156 , H01L33/06 , H01L33/20 , H01L33/24 , H01L33/325 , H01L33/42
Abstract: The present disclosure proposes a micro LED and a method of forming the same. After a body of layers to structure a PN junction is formed sequentially on the outer wall of a buffer layer column, a first electrode is formed on the outer side of the body of layers that structured the PN junction. A second electrode is formed on the inner side of the body of layers that structured the PN junction after the buffer layer column is removed. The first electrode and second electrode are insulating to each other in areas outside of the body of layers structuring the PN junction. The micro LED formed is of a tube structure. The tube-structured micro LED can effectively lower the impedance imposed by the body of layers structuring the PN junction between the first and second electrodes, and thus enhance conductivity and illumination efficiency of the micro LED.
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5.发明申请公开(公告)号：US20180197926A1
公开(公告)日：2018-07-12
申请号：US15111230
申请日：2016-04-01
Inventor： Jhih-jie HUANG , Bo LIANG , Wei WANG
CPC classification number: H01L27/3244 , H01L51/0035 , H01L51/0097 , H01L51/5271 , H01L51/56 , H01L2227/323 , H01L2251/5323 , H01L2251/5338 , Y02E10/549
Abstract: The present application discloses a double sided organic light-emitting display apparatus, including: a rigid substrate; a transmission flexible substrate and a reflective flexible substrate formed on the rigid substrate; a display substrate having a plurality of switching elements formed on the transmission flexible substrate and the reflective flexible substrate; and a top-emission OLED light-emitting layer and a bottom-emission OLED light-emitting layer formed on the display substrate, wherein the top-emission OLED light-emitting layer is corresponding to the reflective flexible substrate and the bottom-emission OLED light-emitting layer is corresponding to the transmission flexible substrate. The present application also provides a method of manufacturing the OLED display apparatus. The OLED display apparatus can achieve the double sided display, and because of its use of the flexible substrate, it also has the advantage of ease of carrying and flexible property.
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公开(公告)号：US20190157592A1
公开(公告)日：2019-05-23
申请号：US16254711
申请日：2019-01-23
Abstract: A method for manufacturing an organic thin film transistor includes steps of: forming a graphene layer on a surface of a metal substrate; covering a surface of the graphene layer with an organic solution and heating the graphene layer to form organic semiconductor nano lines on the surface of the graphene layer; and transferring the organic semiconductor nano lines to a target substrate. The graphene layer is formed on the surface of the metal substrate in mass production. The organic semiconductor nano lines (monocrystalline semiconductor) are grown in mass production by the graphene layer. The semiconductor layer having organic thin film transistors is formed after transferring the organic semiconductor nano lines on the target substrate. A large amount of the organic semiconductor nano lines can be formed simultaneously on the surface of the metal substrate with a large area.
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公开(公告)号：US20180337356A1
公开(公告)日：2018-11-22
申请号：US15544015
申请日：2017-04-28
CPC classification number: H01L51/0558 , H01L27/3274 , H01L51/0013 , H01L51/0045 , H01L51/0052
Abstract: The present application discloses a manufacturing method of an organic thin film transistor, comprising steps of: forming a graphene layer on a surface of a metal substrate; covering a surface of the graphene layer with organic solution and heating the graphene layer to form an organic semiconductor nano line on the surface of the graphene layer; and transferring the organic semiconductor nano line on a target substrate. The graphene layer is formed on the surface of the metal substrate in mass production. The organic semiconductor nano lines (monocrystalline semiconductor) are grown in mass production by graphene layer. The semiconductor layer having organic thin film transistors are formed after transferring the organic semiconductor nano lines on the target substrate. A large amount of the organic semiconductor nano lines can be formed at a time on the surface of the metal substrate with a large area.
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8.发明申请公开(公告)号：US20180315836A1
公开(公告)日：2018-11-01
申请号：US15540543
申请日：2017-05-23
Inventor： Bo LIANG
IPC: H01L29/66 , H01L27/12 , H01L29/786 , H01L29/423 , H01L21/308
Abstract: The present disclosure relates to a manufacturing method of inorganic thin film transistors (TFTs), including: forming a p-type semiconductor layer and a n-type semiconductor layer on a hard substrate in sequence, forming a slot on the p-type semiconductor layer, wherein the slot passes through the n-type semiconductor layer, forming a source and a drain on the n-type semiconductor layer, wherein the source and the drain are respectively configured on two sides of the slot, performing a flip-transferring process to transfer the p-type semiconductor layer, the n-type semiconductor layer, the source, and the drain on a flexible substrate, forming a gate insulation layer and a gate on the p-type semiconductor layer in sequence, forming a flat layer on the gate insulation layer, wherein the flat layer covers the gate. The inorganic TFT is designed to obtain a narrow channel inorganic TFT device, to reduce process requirements, and to reduce costs.
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