公开(公告)号：US09093579B2

公开(公告)日：2015-07-28

申请号：US13294951

申请日：2011-11-11

Applicant: Jeffrey Mackey ,  Ulrich Boettiger ,  Mattia Cichocki ,  Loriston Ford ,  Rick Holscher ,  Mitchell J. Mooney ,  Brian Vaartstra

Inventor： Jeffrey Mackey ,  Ulrich Boettiger ,  Mattia Cichocki ,  Loriston Ford ,  Rick Holscher ,  Mitchell J. Mooney ,  Brian Vaartstra

IPC: H01L31/0232 ,  H01L31/0216 ,  H01L27/144 ,  H01L27/146

CPC classification number: H01L31/02327 ,  H01L27/1446 ,  H01L27/14605 ,  H01L27/14621 ,  H01L27/14629 ,  H01L27/1464 ,  H01L27/14685 ,  H01L31/02162

Abstract: Pixel arrays are provided for image sensors that have barriers between color filters in an array of color filters. Color filter barriers may be formed from a transparent or semi-transparent material. Color filter barriers may be formed from a low refractive index material. Color filters may be etched and color filter barrier material may be formed in the etched regions of the color filters. If desired, a layer of color filter barrier material may be etched to form open regions and color filter material may be formed in the open regions of the color filter barrier material. An image sensor may be a front-side illuminated image sensor or a back-side illuminated image sensor.

Abstract translation: 像素阵列被提供用于在滤色器阵列中的滤色器之间具有屏障的图像传感器。 滤色器屏障可以由透明或半透明材料形成。 滤色器屏障可以由低折射率材料形成。 可以蚀刻滤色器，并且可以在滤色器的蚀刻区域中形成滤色器阻挡材料。 如果需要，可以蚀刻一层滤色器阻挡材料以形成开放区域，并且滤色器材料可以形成在滤色器阻挡材料的开放区域中。 图像传感器可以是前侧照明图像传感器或背面照明图像传感器。

公开(公告)号：US20120188421A1

公开(公告)日：2012-07-26

申请号：US13053728

申请日：2011-03-22

Applicant: Ulrich Boettiger

Inventor： Ulrich Boettiger

IPC: H04N5/335 ,  H01L31/18

CPC classification number: H04N5/2254

Abstract: An imaging system may include an array of lenses, each of which is aligned over a respective one of a plurality of imaging pixels. The array of lenses may be formed in two layers. The first layer may include a first set of non-adjacent lenses and centering structures between the first lenses. The centering structures may be aligned with the first set of lenses as part of a mask design with a high level of accuracy. The second layer may include a second set of lenses, each of which is formed on a respective one of the centering structures. Forming the second set of lenses may include a reflow process in which surface tension forces center the second set of lenses on their respective centering structures, thereby aligning the second set of lenses with the first set of lenses with a high level of accuracy.

Abstract translation: 成像系统可以包括透镜阵列，每个透镜阵列在多个成像像素中的相应一个上对准。 透镜阵列可以形成为两层。 第一层可以包括第一组非相邻透镜和第一透镜之间的定心结构。 定心结构可以与第一组透镜对准，作为掩模设计的一部分，具有高精度。 第二层可以包括第二组透镜，每个透镜形成在相应的定心结构之一上。 形成第二组透镜可以包括回流工艺，其中表面张力将第二组透镜定位在它们各自的对中结构上，从而以高精度对准第二组透镜与第一组透镜。

公开(公告)号：US20120061787A1

公开(公告)日：2012-03-15

申请号：US13302907

申请日：2011-11-22

Applicant: Rick Lake ,  Ulrich Boettiger ,  Shashikant Hegde ,  Jacques Duparre

Inventor： Rick Lake ,  Ulrich Boettiger ,  Shashikant Hegde ,  Jacques Duparre

IPC: H01L31/0232

CPC classification number: H01L24/16 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/81 ,  H01L2224/13099 ,  H01L2224/16237 ,  H01L2224/81141 ,  H01L2224/81191 ,  H01L2224/83191 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/1461 ,  H01L2924/351 ,  H05K3/32 ,  H05K3/4007 ,  H05K2201/09045 ,  H01L2924/00 ,  H01L2224/0401

Abstract: Various embodiments include interconnects for semiconductor structures that can include a first conductive structure, a second conductive structure and a non-hardening liquid conductive material in contact with the first and second structure. Other embodiments include semiconductor components and imager devices using the interconnects. Further embodiments include methods of forming a semiconductor structure and focusing methods for an imager device.

Abstract translation: 各种实施例包括用于半导体结构的互连，其可以包括与第一和第二结构接触的第一导电结构，第二导电结构和非硬化液体导电材料。 其他实施例包括使用互连的半导体部件和成像器件。 另外的实施例包括形成半导体结构的方法和用于成像器装置的聚焦方法。

公开(公告)号：US20090225435A1

公开(公告)日：2009-09-10

申请号：US12043838

申请日：2008-03-06

Applicant: Ulrich Boettiger ,  Saijin Liu

Inventor： Ulrich Boettiger ,  Saijin Liu

IPC: G02B3/00 ,  B29D11/00

CPC classification number: G02B3/0018 ,  B29D11/00365 ,  G02B3/0087 ,  H01L27/14627 ,  H01L27/14685

Abstract: A lens includes a gradient index of refraction and a curved shape. A method of making the lens includes forming a plurality of layers, forming a shaped resist on the plurality of layers, and etching the resist and the plurality of layers to transfer the shape of the resist into the plurality of layers.

Abstract translation: 透镜包括梯度折射率和弯曲形状。 制造透镜的方法包括形成多个层，在多个层上形成成形抗蚀剂，并蚀刻抗蚀剂和多个层，以将抗蚀剂的形状转移到多个层中。

公开(公告)号：US20090147379A1

公开(公告)日：2009-06-11

申请号：US11987868

申请日：2007-12-05

Applicant: Jin Li ,  Jiutao Li ,  Ulrich Boettiger

Inventor： Jin Li ,  Jiutao Li ,  Ulrich Boettiger

IPC: G02B3/08

CPC classification number: G02B3/0087 ,  G02B3/08 ,  H01L27/14605 ,  H01L27/14627 ,  H01L27/14685 ,  H01L31/02327

Abstract: A method, apparatus and system providing a microlens having a substantially flat upper surface and having a plurality of holes arranged in a pattern in a microlens material which produces a focal point at a desired location.

Abstract translation: 一种提供微透镜的方法，装置和系统，该微透镜具有基本上平坦的上表面，并且具有以微透镜材料排列成图案的多个孔，该微透镜材料在期望位置处产生焦点。

公开(公告)号：US20060289723A1

公开(公告)日：2006-12-28

申请号：US11513262

申请日：2006-08-31

Applicant: Jin Li ,  Jiutao Li ,  Ulrich Boettiger ,  Loriston Ford

Inventor： Jin Li ,  Jiutao Li ,  Ulrich Boettiger ,  Loriston Ford

IPC: H01J3/14 ,  H01J40/14 ,  H01J5/16

CPC classification number: H01L27/14627 ,  G02B3/0018 ,  G02B3/0037 ,  G02B3/0056

Abstract: A microlens structure includes lower lens layers on a substrate. A sputtered layer of glass, such as silicon oxide, is applied over the lower lens layers at an angle away from normal to form upper lens layers that increase the effective focal length of the microlens structure. The upper lens layers can be deposited in an aspherical shape with radii of curvature longer than the lower lens layers. As a result, small microlenses can be provided with longer focal lengths. The microlenses are arranged in arrays for use in imaging devices.

公开(公告)号：US20060177959A1

公开(公告)日：2006-08-10

申请号：US11056484

申请日：2005-02-10

Applicant: Ulrich Boettiger ,  Jin Li

Inventor： Ulrich Boettiger ,  Jin Li

IPC: H01L21/00

CPC classification number: H01L27/14685 ,  H01L27/14627 ,  H01L31/02327

Abstract: Microfeature workpieces having microlenses and methods of forming microlenses on microfeature workpieces are disclosed herein. In one embodiment, a method for forming microlenses includes forming a plurality of shaping members on a microfeature workpiece between adjacent pixels, reflowing the shaping members to form a shaping structure between adjacent pixels, depositing lens material onto the workpiece, removing selected portions of the lens material adjacent to the shaping structure such that discrete masses of lens material are located over corresponding pixels, and heating the workpiece to reflow the discrete masses of lens material and form a plurality of microlenses.

Abstract translation: 本文公开了具有微透镜的微特征工件和在微特征工件上形成微透镜的方法。 在一个实施例中，用于形成微透镜的方法包括在相邻像素之间的微特征工件上形成多个成形构件，回流成形构件以在相邻像素之间形成成形结构，将透镜材料沉积到工件上，移除透镜的选定部分 与成形结构相邻的材料使得透镜材料的离散质量位于相应的像素上方，并且加热工件以回流离散的透镜材料块并形成多个微透镜。

公开(公告)号：US20050233588A1

公开(公告)日：2005-10-20

申请号：US11115853

申请日：2005-04-25

Applicant: Ulrich Boettiger ,  Scott Light

Inventor： Ulrich Boettiger ,  Scott Light

IPC: C23F1/00 ,  G03F7/004 ,  G03F7/20 ,  G03F7/40 ,  H01L21/302 ,  H01L21/311 ,  H01L21/76

CPC classification number: G03F7/2024 ,  G03F7/0045 ,  G03F7/40

Abstract: The invention includes methods by which the size and shape of photoresist-containing masking compositions can be selectively controlled after development of the photoresist. For instance, photoresist features can be formed over a substrate utilizing a photolithographic process. Subsequently, at least some of the photoresist features can be exposed to actinic radiation to cause release of a substance from the photoresist. A layer of material is formed over the photoresist features and over gaps between the features. The material has a solubility in a solvent which is reduced when the material interacts with the substance released from the photoresist. The solvent is utilized to remove portions of the material which are not sufficiently proximate to the photoresist to receive the substance, selectively relative to portions which are sufficiently proximate to the photoresist. The photoresist features can be exposed to the actinic radiation either before or after forming the layer of material.

Abstract translation: 本发明包括在光致抗蚀剂显影后可以选择性地控制含光致抗蚀剂的掩模组合物的尺寸和形状的方法。 例如，可以利用光刻工艺在衬底上形成光致抗蚀剂特征。 随后，光致抗蚀剂特征中的至少一些可以暴露于光化辐射以引起物质从光致抗蚀剂的释放。 在光致抗蚀剂特征和特征之间的间隙上形成一层材料。 该材料在溶剂中具有溶解性，当材料与从光致抗蚀剂释放的物质相互作用时，其溶解度降低。 使用溶剂去除材料的不足够接近光致抗蚀剂的部分，以便相对于足够靠近光致抗蚀剂的部分选择性地接收物质。 在形成材料层之前或之后，光致抗蚀剂特征可以暴露于光化辐射。

公开(公告)号：US20050186802A1

公开(公告)日：2005-08-25

申请号：US10783843

申请日：2004-02-20

Applicant: Brett Busch ,  Luan Tran ,  Ardavan Niroomand ,  Fred Fishburn ,  Yoshiki Hishiro ,  Ulrich Boettiger ,  Richard Holscher

Inventor： Brett Busch ,  Luan Tran ,  Ardavan Niroomand ,  Fred Fishburn ,  Yoshiki Hishiro ,  Ulrich Boettiger ,  Richard Holscher

IPC: H01L21/02 ,  H01L21/033 ,  H01L21/302 ,  H01L21/311 ,  H01L21/461 ,  H01L21/8234 ,  H01L21/8242 ,  H01L21/8244 ,  H01L27/108 ,  H01L29/76

CPC classification number: H01L21/0332 ,  H01L21/0337 ,  H01L21/31144 ,  H01L27/10852 ,  H01L28/91 ,  Y10S438/942 ,  Y10S438/946

Abstract: A patterned mask can be formed as follows. A first patterned photoresist is formed over a masking layer and utilized during a first etch into the masking layer. The first etch extends to a depth in the masking layer that is less than entirely through the masking layer. A second patterned photoresist is subsequently formed over the masking layer and utilized during a second etch into the masking layer. The combined first and second etches form openings extending entirely through the masking layer and thus form the masking layer into the patterned mask. The patterned mask can be utilized to form a pattern in a substrate underlying the mask. The pattern formed in the substrate can correspond to an array of capacitor container openings. Capacitor structure can be formed within the openings. The capacitor structures can be incorporated within a DRAM array.

Abstract translation: 图案化掩模可以如下形成。 在掩模层上形成第一图案化的光致抗蚀剂，并在第一蚀刻进入掩模层期间使用。 第一蚀刻延伸到掩模层中的深度不到完全通过掩模层的深度。 随后在掩模层上形成第二图案化的光致抗蚀剂，并在第二次蚀刻进入掩模层期间利用。 组合的第一和第二蚀刻形成完全延伸穿过掩模层的开口，从而在掩模层中形成掩模层。 图案化掩模可以用于在掩模下面的衬底中形成图案。 形成在基板中的图案可以对应于电容器容器开口的阵列。 可以在开口内形成电容结构。 电容器结构可以并入DRAM阵列中。

公开(公告)号：US20050110104A1

公开(公告)日：2005-05-26

申请号：US10721165

申请日：2003-11-26

Applicant: Ulrich Boettiger ,  Jin Li

Inventor： Ulrich Boettiger ,  Jin Li

IPC: G02B3/00 ,  H01L27/146 ,  H01L31/0232

CPC classification number: G02B3/0031 ,  B29D11/00375 ,  G02B3/0043 ,  H01L27/14627 ,  H01L27/14685 ,  H01L31/02327

Abstract: A micro-lens and a method for forming the micro-lens is provided. A micro-lens includes a substrate and lens material located within the substrate, the substrate having a recessed area serving as a mold for the lens material. The recessed can be shaped such that the lens material corrects for optical aberrations. The micro-lens can be part of a micro-lens array. The recessed area can serve as a mold for lens material for the micro-lens array and can be shaped such that the micro-lens array includes arcuate, non-spherical, or non-symmetrical micro-lenses.

Abstract translation: 提供微透镜和形成微透镜的方法。 微透镜包括位于衬底内的衬底和透镜材料，衬底具有用作透镜材料的模具的凹陷区域。 凹陷部分可以成形为使得透镜材料校正光学像差。 微透镜可以是微透镜阵列的一部分。 凹陷区域可以用作用于微透镜阵列的透镜材料的模具，并且可以被成形为使得微透镜阵列包括弓形，非球形或非对称微透镜。