公开(公告)号：US11177383B2

公开(公告)日：2021-11-16

申请号：US16785985

申请日：2020-02-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Hao Chang ,  Sheng-Tsung Wang ,  Lin-Yu Huang ,  Chia-Lin Chuang ,  Cheng-Chi Chuang ,  Yu-Ming Lin ,  Chih-Hao Wang

IPC: H01L29/49 ,  H01L21/764 ,  H01L23/522 ,  H01L29/08 ,  H01L29/66 ,  H01L29/78 ,  H01L21/762 ,  H01L21/311 ,  H01L21/02

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a base and a fin over the base. The semiconductor device structure includes a gate stack wrapping around a first upper portion of the fin. The semiconductor device structure includes a first stressor and a second stressor respectively over opposite first sides of the fin. The semiconductor device structure includes a spacer structure between the gate stack and the first stressor. The semiconductor device structure includes a first spacer layer covering a sidewall of the gate stack, the spacer structure, and the first stressor. The semiconductor device structure includes a dielectric layer over the first spacer layer. The semiconductor device structure includes an etch stop layer between the first spacer layer and the dielectric layer. The semiconductor device structure includes a seal structure between the second upper portion and the third upper portion.

公开(公告)号：US10937884B1

公开(公告)日：2021-03-02

申请号：US16571715

申请日：2019-09-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Sheng-Tsung Wang ,  Lin-Yu Huang ,  Chia-Lin Chuang ,  Chia-Hao Chang ,  Cheng-Chi Chuang ,  Yu-Ming Lin ,  Chih-Hao Wang

IPC: H01L29/49 ,  H01L29/45 ,  H01L29/78 ,  H01L29/66 ,  H01L21/764 ,  H01L21/28

Abstract: A semiconductor device structure includes a gate stack and an adjacent source/drain contact structure formed over a semiconductor substrate. The semiconductor device structure includes a first gate spacer structure extending from a sidewall of the gate stack to a sidewall of the source/drain contact structure, and a second gate spacer structure formed over the first gate spacer structure and between the gate stack and the source/drain contact structure. The second gate spacer structure includes first and second gate spacer layers adjacent to the sidewall of the gate stack and the sidewall of the source/drain contact structure, respectively, and a third gate spacer layer separating the first gate spacer layer from the second gate spacer layer, so that an air gap is sealed by the first, second, and the third gate spacer layers and the first gate spacer structure.

公开(公告)号：US20210083067A1

公开(公告)日：2021-03-18

申请号：US16571715

申请日：2019-09-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Sheng-Tsung Wang ,  Lin-Yu Huang ,  Chia-Lin Chuang ,  Chia-Hao Chang ,  Cheng-Chi Chuang ,  Yu-Ming Lin ,  Chih-Hao Wang

IPC: H01L29/49 ,  H01L29/45 ,  H01L29/78 ,  H01L21/28 ,  H01L21/764 ,  H01L29/66

Abstract: A semiconductor device structure includes a gate stack and an adjacent source/drain contact structure formed over a semiconductor substrate. The semiconductor device structure includes a first gate spacer structure extending from a sidewall of the gate stack to a sidewall of the source/drain contact structure, and a second gate spacer structure formed over the first gate spacer structure and between the gate stack and the source/drain contact structure. The second gate spacer structure includes first and second gate spacer layers adjacent to the sidewall of the gate stack and the sidewall of the source/drain contact structure, respectively, and a third gate spacer layer separating the first gate spacer layer from the second gate spacer layer, so that an air gap is sealed by the first, second, and the third gate spacer layers and the first gate spacer structure.

公开(公告)号：US11282920B2

公开(公告)日：2022-03-22

申请号：US16572192

申请日：2019-09-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tien-Lu Lin ,  Che-Chen Wu ,  Chia-Lin Chuang ,  Yu-Ming Lin ,  Chih-Hao Chang

IPC: H01L29/06 ,  H01L29/08 ,  H01L29/78 ,  H01L29/66 ,  H01L21/768 ,  H01L21/764

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a source/drain contact structure formed over a semiconductor substrate, and a first gate stack formed over the semiconductor substrate and adjacent to the source/drain contact structure. The semiconductor device structure also includes an insulating cap structure formed over and separated from an upper surface of the first gate stack. In addition, the semiconductor device structure includes first gate spacers formed over opposing sidewalls of the first gate stack to separate the first gate stack from the source/drain contact structure. The first gate spacers extend over opposing sidewalls of the insulating cap structure, so as to form an air gap surrounded by the first gate spacers, the first gate stack, and the insulating cap structure.

公开(公告)号：US11444173B2

公开(公告)日：2022-09-13

申请号：US15797973

申请日：2017-10-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsiang-Ku Shen ,  Jin-Mu Yin ,  Tsung-Chieh Hsiao ,  Chia-Lin Chuang ,  Li-Zhen Yu ,  Dian-Hau Chen ,  Shih-Wei Wang ,  De-Wei Yu ,  Chien-Hao Chen ,  Bo-Cyuan Lu ,  Jr-Hung Li ,  Chi-On Chui ,  Min-Hsiu Hung ,  Hung-Yi Huang ,  Chun-Cheng Chou ,  Ying-Liang Chuang ,  Yen-Chun Huang ,  Chih-Tang Peng ,  Cheng-Po Chau ,  Yen-Ming Chen

IPC: H01L29/66 ,  H01L21/8234 ,  H01L27/088 ,  H01L21/311 ,  H01L29/78 ,  H01L21/768 ,  H01L21/3065 ,  H01L29/45 ,  H01L29/08 ,  H01L29/165

Abstract: Structures and formation methods of a semiconductor device structure are provided. The method includes forming a fin structure over a substrate. The method also includes forming a gate structure over the fin structure. The method further includes forming fin spacers over sidewalls of the fin structure and gate spacers over sidewalls of the gate structure. In addition, the method includes forming a source/drain structure over the fin structure and depositing a dummy material layer to cover the source/drain structure. The dummy material layer is removed faster than the gate spacers during the removal of the dummy material layer. The method further includes forming a salicide layer over the source/drain structure and the fin spacers, and forming a contact over the salicide layer. The dummy material layer includes Ge, amorphous silicon or spin-on carbon.

公开(公告)号：US11201085B2

公开(公告)日：2021-12-14

申请号：US16800246

申请日：2020-02-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Lin Chuang ,  Chia-Hao Chang ,  Cheng-Chi Chuang ,  Yu-Ming Lin ,  Chih-Hao Wang

IPC: H01L21/8234 ,  H01L27/088 ,  H01L27/092 ,  H01L21/768

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a first gate structure and a second gate structure formed over a semiconductor substrate. The semiconductor device structure also includes a first insulating cap structure formed between and adjacent to the first gate structure and the second gate structure. The first insulating cap structure is separated from the semiconductor substrate by a first air gap. The first air gap includes a first portion extending into the first insulating cap structure and a second portion extended from the bottom of the first portion toward the semiconductor substrate. The first portion has a width that is less than the width of the second portion.