公开(公告)号：US20160274463A1

公开(公告)日：2016-09-22

申请号：US14658354

申请日：2015-03-16

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Wei-Han Lai ,  Ching-Yu Chang ,  Cheng-Han Wu ,  Siao-Shan Wang ,  Chin-Hsiang Lin

IPC: G03F7/32 ,  G03F7/40 ,  G03F7/38 ,  G03F7/16 ,  G03F7/20

CPC classification number: G03F7/325 ,  G03F7/0382 ,  G03F7/38 ,  G03F7/40

Abstract: A material layer is formed over a substrate. A negative tone photoresist layer is formed over the material layer. An exposure process is performed to the negative tone photoresist layer. A post-exposure bake (PEB) process is performed to the negative tone photoresist layer. After the exposure process and the PEB process, the negative tone photoresist layer is treated with a solvent. The solvent contains a chemical having a greater dipole moment than n-butyl acetate (n-BA).

Abstract translation: 在衬底上形成材料层。 在材料层上形成负色调光致抗蚀剂层。 对负色调光致抗蚀剂层进行曝光处理。 对负色光致抗蚀剂层进行后曝光烘焙（PEB）处理。 在曝光处理和PEB处理之后，用溶剂处理负色调光致抗蚀剂层。 溶剂含有比乙酸正丁酯（n-BA）具有更大的偶极矩的化学物质。

公开(公告)号：US12135502B2

公开(公告)日：2024-11-05

申请号：US18231444

申请日：2023-08-08

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Siao-Shan Wang ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: G03F7/038 ,  C08L25/08 ,  C08L33/10 ,  C08L33/16 ,  G03F7/004 ,  G03F7/027 ,  G03F7/16 ,  G03F7/20 ,  G03F7/40

Abstract: A method for manufacturing a semiconductor device includes forming a photoresist layer including a photoresist composition over a substrate. The photoresist layer is selectively exposed to actinic radiation to form a latent pattern and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a patterned photoresist. The photoresist composition includes a photoactive compound and a resin comprising a radical-active functional group and an acid labile group.

公开(公告)号：US09810990B2

公开(公告)日：2017-11-07

申请号：US14658354

申请日：2015-03-16

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Wei-Han Lai ,  Ching-Yu Chang ,  Cheng-Han Wu ,  Siao-Shan Wang ,  Chin-Hsiang Lin

IPC: G03F7/38 ,  G03F7/32 ,  G03F7/40 ,  G03F7/038

CPC classification number: G03F7/325 ,  G03F7/0382 ,  G03F7/38 ,  G03F7/40

Abstract: A material layer is formed over a substrate. A negative tone photoresist layer is formed over the material layer. An exposure process is performed to the negative tone photoresist layer. A post-exposure bake (PEB) process is performed to the negative tone photoresist layer. After the exposure process and the PEB process, the negative tone photoresist layer is treated with a solvent. The solvent contains a chemical having a greater dipole moment than n-butyl acetate (n-BA).