METHOD OF FABRICATING SEMICONDUCTOR DEVICE HAVING CONTACT STRUCTURES
    2.
    发明申请
    METHOD OF FABRICATING SEMICONDUCTOR DEVICE HAVING CONTACT STRUCTURES 有权
    具有接触结构的半导体器件制造方法

    公开(公告)号:US20160365279A1

    公开(公告)日:2016-12-15

    申请号:US15060641

    申请日:2016-03-04

    Abstract: Provided is a method of fabricating a semiconductor device, the method including forming interconnection structures extending parallel to each other on a substrate; performing a coating process and forming a liquid state silicon source material layer filling an area between the interconnection structures; performing a first annealing process, curing the liquid state silicon source material layer, and forming an amorphous silicon layer; and crystallizing the amorphous silicon layer and forming contact plugs.

    Abstract translation: 提供一种制造半导体器件的方法,该方法包括在衬底上形成彼此平行延伸的互连结构; 执行涂覆工艺并形成填充所述互连结构之间的区域的液态硅源材料层; 进行第一退火处理,固化液态硅源材料层,形成非晶硅层; 并使非晶硅层结晶并形成接触塞。

    SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

    公开(公告)号:US20240172416A1

    公开(公告)日:2024-05-23

    申请号:US18240512

    申请日:2023-08-31

    CPC classification number: H10B12/315 H10B12/482 H10B12/485 H10B12/488

    Abstract: A semiconductor device includes a substrate having a substrate groove extending in a first direction, a gate insulating layer conformally covering an inner wall of the substrate groove, a metal-containing pattern on the gate insulating layer and filling a lower portion of the substrate groove, a silicon pattern on the metal-containing pattern in the substrate groove, and a word line capping pattern on the silicon pattern in the substrate groove, wherein the silicon pattern includes a first silicon pattern covering an upper surface of the metal-containing pattern and a sidewall of the gate insulating layer and having a pattern groove formed thereon and a second silicon pattern filling the pattern groove, the first silicon pattern having a first impurity concentration, and the second silicon pattern having a second impurity concentration less than the first impurity concentration.

    INPUT OUTPUT MEMORY MANAGEMENT UNIT AND ELECTRONIC DEVICE HAVING THE SAME

    公开(公告)号:US20230385203A1

    公开(公告)日:2023-11-30

    申请号:US18101352

    申请日:2023-01-25

    CPC classification number: G06F12/1027 G06F12/1009

    Abstract: Disclosed is an input output memory management unit (IOMMU) including a first memory device including a translation lookaside buffer (TLB), a second memory device including a translation group table, a plurality of translation request controllers, each of which is configured to perform an address translation operation, and an allocation controller. The allocation controller may be configured to receive a first request including a first page table identifier (ID), a first virtual page number, and a first page offset, looks up the TLB by using the first page table ID and the first virtual page number, look up the translation group table by using the first page table ID and the first virtual page number when a TLB miss for the first request occurs, and allocate a first translation request controller among the plurality of translation request controllers based on a translation group table miss for the first request.

    NEAR FIELD COMMUNICATION (NFC) DEVICE AND METHOD OF DETECTING RESONANCE FREQUENCY OF THE SAME

    公开(公告)号:US20210203382A1

    公开(公告)日:2021-07-01

    申请号:US16991666

    申请日:2020-08-12

    Abstract: A near field communication (NFC) device includes a resonator including an antenna and a matching circuit, a transmitter and a frequency detector. The transmitter generates a sensing voltage signal at the resonator. With respect to a plurality of measurement periods where each measurement period includes a turn-on period and a turn-off period, the transmitter is enabled to output a radio frequency (RF) signal to the resonator during the turn-on period and disabled during the turn-off period. The frequency detector detects a resonance frequency of the resonator based on the sensing voltage signal. The resonance frequency is accurately detected by measuring the resonance frequency during the plurality of measurement periods. In addition, the resonance frequency is efficiently detected by generating the sensing voltage signal using the transmitter established in the NFC device.

    ELECTRONIC DEVICE INCLUDING CIRCUIT BOARD
    8.
    发明申请
    ELECTRONIC DEVICE INCLUDING CIRCUIT BOARD 审中-公开
    包括电路板的电子设备

    公开(公告)号:US20160242289A1

    公开(公告)日:2016-08-18

    申请号:US15016945

    申请日:2016-02-05

    Abstract: An electronic device that includes a circuit board which is arranged between a front cover and a back cover, and includes a conductive pattern inserted into the circuit board. A signal generation or power supply element is electrically connected with the conductive pattern. An adhesion layer is attached onto the circuit board and overlaps at least part of the conductive pattern when viewed from above the circuit board. A first structure is arranged on the adhesion layer and overlaps at least part of the adhesion layer when viewed from above the circuit board. A second structure is arranged on a top of the first structure, overlaps at least part of the first structure when viewed from above the circuit board, and the second structure includes a bottom surface including metal. A metal layer is inserted between the first structure and the bottom surface of the second structure to attach the second structure to the first structure.

    Abstract translation: 一种电子设备,包括布置在前盖和后盖之间的电路板,并且包括插入到电路板中的导电图案。 信号产生或电源元件与导电图案电连接。 当从电路板上方观察时,粘合层附着在电路板上并与导电图案的至少一部分重叠。 当从电路板上方观察时,第一结构布置在粘合层上并与粘合层的至少一部分重叠。 第二结构设置在第一结构的顶部,当从电路板上方观察时,与第一结构的至少一部分重叠,并且第二结构包括包括金属的底表面。 金属层插入在第一结构和第二结构的底表面之间,以将第二结构附接到第一结构。

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