公开(公告)号：US20250081865A1

公开(公告)日：2025-03-06

申请号：US18818913

申请日：2024-08-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： JINWOO LEE ,  Hyunsang Hwang ,  Youngdong Kim ,  DONGHO AHN ,  Jin Myung Choi ,  Geon Hui Han

IPC: H10N70/00 ,  G11C13/00 ,  H10B63/00 ,  H10N70/20

Abstract: A memory device comprising a stacking structure including a plurality of electrodes and an insulation layer between the plurality of electrodes. The stacking structure has a recess portion corresponding to the plurality of electrodes or the insulation layer at a side surface of the stacking structure. The memory device also comprising a resistance variable layer on the side surface of the stacking structure having the recess portion, and includes a portion extending in an extension direction crossing the stacking structure. The resistance variable layer includes a first portion including a first expanded portion along a recess surface of the recess portion, a second portion including a second expanded portion along the recess surface of the recess portion on the first portion, and a third portion on the second portion. The second portion has a resistance smaller than a resistance of the first portion.

公开(公告)号：US11452206B2

公开(公告)日：2022-09-20

申请号：US17029222

申请日：2020-09-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： In-Jae Lee ,  Youngdong Kim ,  Sang Sub Song ,  Ki-Hong Jeong

IPC: H05K1/00 ,  H05K1/11 ,  H01R12/71

Abstract: A card-type solid state drive (SSD) including: a substrate that has a first surface and a second surface facing each other; a memory controller and a nonvolatile memory device that are on the first surface; a plurality of functional terminals on the second surface; and a plurality of thermal terminals on the second surface, wherein the functional terminals include first-row functional terminals, second-row functional terminals, and third-row functional terminals, wherein at least one of the first-row functional terminals, at least one of the second-row functional terminals, and at least one of the third-row functional terminals are electrically connected to the memory controller or the nonvolatile memory device, and wherein the thermal terminals are not electrically connected to the memory controller or the nonvolatile memory device.