公开(公告)号：US11908797B2

公开(公告)日：2024-02-20

申请号：US17129083

申请日：2020-12-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jiyoung Ahn ,  Seunguk Han ,  Sunghwan Kim ,  Seoryong Park ,  Kiseok Lee ,  Yoonyoung Choi ,  Taehee Han ,  Jiseok Hong

IPC: H01L23/528 ,  H01L29/06 ,  H10B12/00 ,  H01L23/522 ,  H01L21/768 ,  H01L21/764

CPC classification number: H01L23/5283 ,  H01L21/764 ,  H01L21/7682 ,  H01L29/0649 ,  H10B12/482 ,  H10B12/485 ,  H10B12/488 ,  H01L23/5222 ,  H10B12/0335 ,  H10B12/315 ,  H10B12/34

Abstract: An integrated circuit device is provided. The integrated circuit device includes: a bit line on a substrate, the bit line including a lower conductive layer and an upper conductive layer; an insulating capping pattern on the bit line; and a main insulating spacer on a sidewall of the bit line and a sidewall of the insulating capping pattern, the main insulating spacer including an extended portion that is convex toward the upper conductive layer.

公开(公告)号：USD900798S1

公开(公告)日：2020-11-03

申请号：US29701431

申请日：2019-08-12

Applicant: Samsung Electronics Co., Ltd.

Designer： Sanghoon Song ,  Youn-Gun Jung ,  Yoonyoung Choi ,  Junyoung Lee

公开(公告)号：USD900774S1

公开(公告)日：2020-11-03

申请号：US29677343

申请日：2019-01-18

Applicant: Samsung Electronics Co., Ltd.

Designer： Sanghoon Song ,  Youn-Gun Jung ,  Yoonyoung Choi ,  Junyoung Lee

公开(公告)号：USD860965S1

公开(公告)日：2019-09-24

申请号：US29623860

申请日：2017-10-27

Applicant: Samsung Electronics Co., Ltd.

Designer： Youngjun Cho ,  Sanghoon Song ,  Junyoung Lee ,  Munhee Jang ,  Youn-Gun Jung ,  Yoonyoung Choi

公开(公告)号：USD860152S1

公开(公告)日：2019-09-17

申请号：US29623863

申请日：2017-10-27

Applicant: Samsung Electronics Co., Ltd.

Designer： Youngjun Cho ,  Sanghoon Song ,  Junyoung Lee ,  Munhee Jang ,  Youn-Gun Jung ,  Yoonyoung Choi

公开(公告)号：USD855044S1

公开(公告)日：2019-07-30

申请号：US29685297

申请日：2019-03-27

Applicant: Samsung Electronics Co., Ltd.

Designer： Youngjun Cho ,  Sanghoon Song ,  Junyoung Lee ,  Munhee Jang ,  Youn-Gun Jung ,  Yoonyoung Choi

公开(公告)号：US11647627B2

公开(公告)日：2023-05-09

申请号：US17168952

申请日：2021-02-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jiseok Hong ,  Sangho Lee ,  Seoryong Park ,  Jiyoung Ahn ,  Kiseok Lee ,  Kiseok Lee ,  Yoonyoung Choi ,  Seunguk Han

IPC: H01L27/108

CPC classification number: H01L27/10888 ,  H01L27/10814 ,  H01L27/10855 ,  H01L27/10885

Abstract: An integrated circuit device includes: a substrate including a plurality of active regions; a bit line extending on the substrate in a horizontal direction; a direct contact connected between a first active region selected among the plurality of active regions and the bit line; an inner oxide layer contacting a sidewall of the direct contact; and a carbon-containing oxide layer nonlinearly extending on a sidewall of the bit line in a vertical direction, the carbon-containing oxide layer contacting the sidewall of the bit line.

公开(公告)号：US11217457B2

公开(公告)日：2022-01-04

申请号：US16863244

申请日：2020-04-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seungjin Kim ,  Byung-Hyun Lee ,  Yoonyoung Choi ,  Tae-Kyu Kim ,  Heesook Cheon ,  Bo-Wo Choi ,  Hyun-Sil Hong

IPC: H01L21/311 ,  H01L21/027 ,  H01L21/48

Abstract: A method of fabricating a semiconductor device including preparing a substrate including a wafer inner region and a wafer edge region, the wafer inner region including a chip region and a scribe lane region, sequentially stacking a mold layer and a supporting layer on the substrate, forming a first mask layer on the supporting layer, the first mask layer including a first stepped region on the wafer edge region, forming a step-difference compensation pattern on the first stepped region, forming a second mask pattern including openings, on the first mask layer and the step-difference compensation pattern, and sequentially etching the first mask layer, the supporting layer, and the mold layer using the second mask pattern as an etch mask to form a plurality of holes in at least the mold layer may be provided.

公开(公告)号：USD900773S1

公开(公告)日：2020-11-03

申请号：US29677341

申请日：2019-01-18

Applicant: Samsung Electronics Co., Ltd.

Designer： Sanghoon Song ,  Youn-Gun Jung ,  Yoonyoung Choi ,  Junyoung Lee

公开(公告)号：USD821348S1

公开(公告)日：2018-06-26

申请号：US29597802

申请日：2017-03-20

Applicant: Samsung Electronics Co., Ltd.

Designer： Sanghoon Song ,  Youn-Gun Jung ,  Yoonyoung Choi ,  Junyoung Lee