Chip transfer device and chip transferring method using the same

    公开(公告)号:US11004705B2

    公开(公告)日:2021-05-11

    申请号:US16282581

    申请日:2019-02-22

    Abstract: A chip transfer device is provided. The chip transfer device according to an embodiment includes a support, a plurality of pick-up modules disposed on the support in a horizontal direction, and movably connected to the support, and a controller configured to control the plurality of pick-up modules, wherein each of the plurality of pick-up modules is movable while collectively picking up a plurality of chips on a corresponding wafer among a plurality of wafers, and wherein the controller moves and adjusts the plurality of pick-up modules in a horizontal direction.

    Micro LED transfer device and micro LED transferring method using the same

    公开(公告)号:US11695092B2

    公开(公告)日:2023-07-04

    申请号:US17674520

    申请日:2022-02-17

    CPC classification number: H01L33/0095 H01L33/62

    Abstract: A micro light emitting diode (LED) transfer device includes a transfer part configured to transfer a relay substrate having at least one micro LED; a mask having openings corresponding to a position of the at least one micro LED; a first laser configured to irradiate a first laser light having a first wavelength to the mask; a second laser configured to irradiate a second laser light having a second wavelength different from the first wavelength to the mask; and a processor configured to: control the at least one micro LED to contact a coupling layer of a target substrate, and based on the coupling layer contacting the at least one micro LED, control the first laser to irradiate the first laser light toward the at least one micro LED, and subsequently control the second laser to irradiate the second laser light toward the at least one micro LED.

    Light emitting diode and manufacturing method of light emitting diode

    公开(公告)号:US11063174B2

    公开(公告)日:2021-07-13

    申请号:US16653449

    申请日:2019-10-15

    Abstract: A light emitting diode (LED) includes: a device substrate; a first semiconductor layer above the device substrate, and doped with an n-type dopant; a second semiconductor layer above the first semiconductor layer, and doped with a p-type dopant; an active layer between the first semiconductor layer and the second semiconductor layer and configured to provide light; a transparent electrode layer adjacent to an upper part of the second semiconductor layer; and a first electrode pad and a second electrode pad between the device substrate and the first semiconductor layer, the first electrode pad electronically connected with the first semiconductor layer and the second electrode pad electrically connected with the second semiconductor layer, wherein light provided by the active layer is irradiated to an outside in a direction from the active layer to the second semiconductor layer.

Patent Agency Ranking