公开(公告)号：US10446495B2

公开(公告)日：2019-10-15

申请号：US15909390

申请日：2018-03-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yoonhee Kang ,  Jiyoung Kim ,  Taejin Yim ,  Jongmin Baek ,  Sanghoon Ahn ,  Hyeoksang Oh ,  Kyu-Hee Han

IPC: H01L23/532 ,  H01L21/768 ,  H01L21/02

Abstract: Embodiments of the present inventive concepts provide methods of forming an ultra-low-k dielectric layer and the ultra-low-k dielectric layer formed thereby. The method may include forming a first layer by supplying a precursor including silicon, oxygen, carbon, and hydrogen, performing a first ultraviolet process on the first layer to convert the first layer into a second layer, and performing a second ultraviolet process on the second layer under a process condition different from that of the first ultraviolet process.