公开(公告)号：US20240127865A1

公开(公告)日：2024-04-18

申请号：US18217087

申请日：2023-06-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yeji Shin ,  TAE-HONG KWON ,  YOONJAE LEE ,  Seokin Hong

IPC: G11C5/14 ,  G11C16/12 ,  G11C16/30

CPC classification number: G11C5/145 ,  G11C16/12 ,  G11C16/30

Abstract: Disclosed is a charge pump of a flash memory, which includes a first stage pump that is connected between an output terminal and a first pump node, and a second stage pump that is connected between the first pump node and a second pump node. The first stage pump includes a first switch circuit that is connected between a power terminal and the first pump node and provides a power supply voltage to the first pump node in response to a first stage signal, in a normal operation, and a first pump circuit that generates a first pumping voltage by using a voltage of the first pump node in response to a first clock signal and provides the first pumping voltage to the output terminal. The first switch circuit blocks a current flow from the first pump node to the power terminal in a sudden power-off event.