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1.发明授权公开(公告)号：US11527675B2
公开(公告)日：2022-12-13
申请号：US16749356
申请日：2020-01-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Tan Sakong
Abstract: A semiconductor light emitting device includes a light emitting structure having a rod shape with first and second surfaces opposing each other and a side surface connected between the first and second surfaces, and including a first conductivity-type semiconductor providing the first surface, an active layer and a second conductivity-type semiconductor, a first electrode layer on a first region of the first surface of the light emitting structure and connected to the first conductivity-type semiconductor, the first region having a level that is vertically offset from a level of a second region adjacent thereto, and a second electrode layer connected to the second conductivity-type semiconductor.
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公开(公告)号：US09252327B1
公开(公告)日：2016-02-02
申请号：US14698575
申请日：2015-04-28
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Chul Min Kim , Tan Sakong , Suk Ho Yoon , Keon Hun Lee , Do Young Rhee , Sang Don Lee
IPC: H01L29/207 , H01L33/14 , H01L33/32 , H01L33/46
CPC classification number: H01L33/145 , H01L25/167 , H01L33/06 , H01L33/32 , H01L2224/32225 , H01L2224/48227 , H01L2224/48237 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2224/73265 , H01L2924/181 , H05B33/0872 , H01L2924/00012 , H01L2924/00
Abstract: A semiconductor light emitting device may include: a first conductivity type semiconductor layer; an active layer disposed on the first conductivity type semiconductor layer; an electron-blocking layer disposed on the active layer; a second conductivity type semiconductor layer disposed on the electron-blocking layer; and a hole-diffusion layer disposed between the electron-blocking layer and the second conductivity type semiconductor layer. The hole-diffusion layer may include three layers having different energy band gaps and different resistance levels and at least one of the three layers may contain Al. A composition of the Al may be lower in the at least one layer than in the electron-blocking layer.
Abstract translation: 半导体发光器件可以包括：第一导电类型半导体层; 设置在所述第一导电类型半导体层上的有源层; 设置在有源层上的电子阻挡层; 设置在电子阻挡层上的第二导电类型半导体层; 以及设置在电子阻挡层和第二导电类型半导体层之间的空穴扩散层。 空穴扩散层可以包括具有不同能带隙和不同电阻水平的三层，三层中的至少一层可以含有Al。 所述Al的组成在所述至少一层中比在所述电子阻挡层中低。
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公开(公告)号：US11515449B2
公开(公告)日：2022-11-29
申请号：US16935356
申请日：2020-07-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jongin Yang , Yongil Kim , Juhyun Kim , Tan Sakong , Jonguk Seo , Suhyun Jo
Abstract: Semiconductor light emitting devices and methods of fabricating the same are provided. The semiconductor light emitting device includes a light emitting structure, a first electrode, a first dielectric layer, a second electrode, and a vertical conductive pattern. The light emitting structure includes a first semiconductor layer, an active layer, and a second semiconductor layer that are sequentially stacked, and includes a first opening that penetrates the second semiconductor layer and the active layer, the first opening exposing the first semiconductor layer. The first electrode fills at least a portion of the first opening. The first dielectric layer is on the first electrode. The second electrode is on the light emitting structure and covers the first dielectric layer, the second electrode being electrically connected to the second semiconductor layer. The vertical conductive pattern surrounds outer lateral surfaces of the light emitting structure and is electrically connected to the first electrode.
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公开(公告)号：US09748453B2
公开(公告)日：2017-08-29
申请号：US15146372
申请日：2016-05-04
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jong Hak Kim , Tan Sakong , Eun Deok Sim , Jeong Wook Lee , Jin Young Lim , Byoung Kyun Kim
CPC classification number: H01L33/58 , H01L33/007 , H01L33/22 , H01L33/32 , H01L2224/14 , H01L2224/16225 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2924/181 , H01L2933/0083 , H01L2924/00012 , H01L2924/00014
Abstract: A semiconductor light emitting device includes a substrate formed of a first material; and a convex portion protruding from the substrate and including: a first layer formed of the first material as that of the substrate; and a second layer formed of a second material different from the first material and disposed on the first layer. A second height of the second layer is greater than a first height of the first layer.
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5.发明授权公开(公告)号：US10892298B2
公开(公告)日：2021-01-12
申请号：US16205454
申请日：2018-11-30
Applicant: Samsung Electronics Co., Ltd.
Inventor： Tan Sakong , Yong Il Kim , Jong Uk Seo , Ji Hye Yeon
Abstract: A light emitting diode display device is provided. The light emitting diode display device includes a first light emitting diode pixel including a first light emitting diode layer and a first color conversion material on the first light emitting diode layer, a second light emitting diode pixel including a second light emitting diode layer and a second color conversion material on the second light emitting diode layer, a separation film disposed between the first light emitting diode layer and the second light emitting diode layer and a partition disposed between the first color conversion material and the second color conversion material and including a partition material, wherein the first and second light emitting diode pixels are divided by the separation film and the partition, the partition is disposed on the separation film in alignment with the separation film such that the partition includes linear portions that extend in a first direction and the separation film includes linear portions that also extend in the first direction and vertically overlap the linear portions of the partition, and the partition material includes an insulating material different from silicon.
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Patent Agency Ranking
公开(公告)号：US10957833B2
公开(公告)日：2021-03-23
申请号：US16356283
申请日：2019-03-18
Applicant: Samsung Electronics Co., Ltd.
Inventor： Tan Sakong , Yong Il Kim , Han Kyu Seong , Ji Hye Yeon , Chung Sun Lee , Ji Hwan Hwang
IPC: H01L33/00 , H01L33/62 , H01L25/075 , H01L27/12 , H01L23/00
Abstract: A light emitting diode display device includes a display board comprising a plurality of unit pixels, a drive circuit board including a plurality of drive circuit regions corresponding to the plurality of unit pixels, and a plurality of bumps interposed between the plurality of unit pixels and the plurality of drive circuit regions. The plurality of unit pixels comprises a first unit pixel including a first P electrode. The plurality of drive circuit regions comprises a first drive circuit region corresponding to the first unit pixel and a first pad connected to a first drive transistor, the plurality of bumps includes a first solder in contact with the first pad, and a first bump on the first solder and including a first filler in contact with the first P electrode, the first solder includes at least one of tin and silver, and the first filler includes copper or nickel.
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公开(公告)号：US09698304B2
公开(公告)日：2017-07-04
申请号：US14979869
申请日：2015-12-28
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Chul Min Kim , Tan Sakong , Suk Ho Yoon , Keon Hun Lee , Do Young Rhee , Sang Don Lee
CPC classification number: H01L33/145 , H01L25/167 , H01L33/06 , H01L33/32 , H01L2224/32225 , H01L2224/48227 , H01L2224/48237 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2224/73265 , H01L2924/181 , H05B33/0872 , H01L2924/00012 , H01L2924/00
Abstract: A lighting system includes a lighting unit comprising at least one lighting device, a sensing unit configured to measure at least one of atmospheric temperature and humidity, a controlling unit configured to compare the at least one of the temperature and the humidity measured by the sensor unit with set values and determine a color temperature of the lighting unit as a result of the comparison, and a driving unit configured to drive to the lighting unit to have the determined color temperature.
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公开(公告)号：US20170062675A1
公开(公告)日：2017-03-02
申请号：US15219454
申请日：2016-07-26
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jin-young Lim , Tan Sakong , Eun-deok Sim , Suk-ho Yoon , Jeong-wook Lee
CPC classification number: H01L33/58 , H01L33/0075 , H01L33/486 , H01L2933/0025 , H01L2933/0058
Abstract: A method of manufacturing a light emitting diode (LED) includes forming a first material layer on a substrate, forming a second material layer on the first material layer, forming a photomask pattern on the second material layer, performing a first etching on the second material layer and a portion of the first material layer by using the photomask pattern as an etch mask, removing the photomask pattern, and forming a plurality of isolated structures by performing a second etching on the remaining portion of the first material layer until a top surface of the substrate is exposed.
Abstract translation: 一种制造发光二极管（LED）的方法包括在基板上形成第一材料层，在第一材料层上形成第二材料层，在第二材料层上形成光掩模图案，对第二材料进行第一蚀刻 层和一部分第一材料层，通过使用光掩模图案作为蚀刻掩模，去除光掩模图案，以及通过对第一材料层的剩余部分进行第二蚀刻形成多个隔离结构，直到第 衬底被暴露。
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公开(公告)号：US08828751B2
公开(公告)日：2014-09-09
申请号：US13844569
申请日：2013-03-15
Applicant: Samsung Electronics Co., Ltd.
Inventor： Do Young Rhee , Tan Sakong , Ki Sung Kim , Suk Ho Yoon , Young Sun Kim , Sung Tae Kim
CPC classification number: H01L33/005 , H01L33/26
Abstract: Provided a method of manufacturing a semiconductor light emitting device, the method includes forming a light emitting structure by growing a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer on a substrate. The forming of the light emitting structure includes: forming a protective layer after a portion of the light emitting structure is formed forming a sacrificial layer on the protective layer; and continuously forming a further portion of the light emitting structure on the sacrificial layer.
Abstract translation: 提供一种制造半导体发光器件的方法，该方法包括通过在衬底上生长第一导电类型半导体层，有源层和第二导电类型半导体层来形成发光结构。 发光结构的形成包括：在形成发光结构的一部分之后形成保护层，在保护层上形成牺牲层; 并且在牺牲层上连续地形成发光结构的另一部分。
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公开(公告)号：US11742469B2
公开(公告)日：2023-08-29
申请号：US17036090
申请日：2020-09-29
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Donggun Lee , Gibum Kim , Joosung Kim , Juhyun Kim , Tan Sakong , Jonguk Seo , Youngjo Tak
CPC classification number: H01L33/62 , H01L33/382 , H01L33/486 , H01L33/54
Abstract: A semiconductor light-emitting device includes a plurality of light-emitting device structures separated from each other, each of the plurality of light-emitting device structures including a first conductivity type semiconductor layer, an active layer on the first conductivity type semiconductor layer, a second conductivity type semiconductor layer on the active layer, a first electrode connected to the first conductivity type semiconductor layer, and a second electrode connected to the second conductivity type semiconductor layer, and a partition wall structure between two adjacent light-emitting device structures of the plurality of light-emitting device structures, the partition wall structure defining a pixel space.
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