公开(公告)号：US20250142998A1

公开(公告)日：2025-05-01

申请号：US18769794

申请日：2024-07-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Taemin KIM ,  Jungsan KIM ,  Yongsoon PARK ,  Seungho LEE

IPC: H01L27/146

Abstract: An image sensor includes a substrate including adjacent first and second pixel regions; a photoelectric converter at the substrate; and a pixel isolation portion separating the first and second pixel regions based on penetrating at least a part of the substrate between the first and second pixel regions. The pixel isolation portion includes first and second insulation portions respectively adjacent to the first and second pixel regions, and a conductive layer and an inner layer between the first and second insulation portions and including different materials. The pixel isolation portion includes a first portion including a portion where the conductive layer occupies a space between the first and second insulation portions in an intersection direction that intersects an extension direction of the pixel isolation portion, and a second portion including the conductive layer and the inner layer between the first and second insulation portions in the intersection direction.

公开(公告)号：US20250098352A1

公开(公告)日：2025-03-20

申请号：US18968655

申请日：2024-12-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Su PARK ,  Kwansik KIM ,  Changhwa KIM ,  Taemin KIM ,  Gyuhyun LIM

IPC: H01L27/146

Abstract: An image sensor includes a substrate including a first surface and a second surface which is opposite to the first portion, and a pixel isolation portion provided in the substrate and configured to isolate unit pixels from each other. The pixel isolation portion includes a first filling insulation pattern extending from the first surface toward the second surface and having an air gap region, the first filling insulation pattern including a first sidewall and a second sidewall which is opposite to the first sidewall, a conductive structure including a first portion on the first sidewall, a second portion on the second sidewall, and a connection portion connecting the first portion and the second portion, and an insulating liner provided between the first portion and the substrate and between the second portion and the substrate.

公开(公告)号：US20240222399A1

公开(公告)日：2024-07-04

申请号：US18380795

申请日：2023-10-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ingyu Baek ,  Kwansik Kim ,  Jungsan Kim ,  Taemin KIM

IPC: H01L27/146

CPC classification number: H01L27/14603 ,  H01L27/1463 ,  H01L27/14645

Abstract: An image sensor may include a substrate including pixels, a first transistor and a second transistor disposed on the substrate and spaced apart from each other, a first interlayer insulating layer covering the first transistor and the second transistor, a first lower electrode disposed in the first interlayer insulating layer and connected to an end portion of the first transistor, a first dielectric layer on the first lower electrode, a first upper electrode on the first dielectric layer, a second interlayer insulating layer covering the first upper electrode and the first interlayer insulating layer, and a first pillar provided to penetrate the second and first interlayer insulating layers and connected to an end portion of the second transistor.

公开(公告)号：US20230074307A1

公开(公告)日：2023-03-09

申请号：US17852628

申请日：2022-06-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hwanyeol PARK ,  Kyungnam KANG ,  Jeonghoon NAM ,  Sejin KYUNG ,  Daewee KONG ,  Taemin KIM

IPC: C23C16/458 ,  H01L21/687 ,  H01J37/32 ,  C23C16/50 ,  C23C16/455 ,  C23C16/46 ,  H05B3/12 ,  H05B3/28

Abstract: A substrate support unit includes: a ceramic body having a surface for supporting a substrate, the ceramic body including aluminum nitride (AlN), a heat generating resistor disposed in the ceramic body, and including molybdenum (Mo), and a coating layer surrounding the heat generating resistor, and including molybdenum aluminum nitride (MoAlN).

公开(公告)号：US20240170530A1

公开(公告)日：2024-05-23

申请号：US18387702

申请日：2023-11-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ingyu BAEK ,  Changyong UM ,  Kwansik KIM ,  Jungsan KIM ,  Taemin KIM

IPC: H01G15/00 ,  H01L23/522 ,  H01L23/528 ,  H01L27/06

CPC classification number: H01L28/75 ,  H01L23/5226 ,  H01L23/5283 ,  H01L27/0629 ,  H01L28/90

Abstract: An integrated circuit device, including a substrate; a lower insulating film; and a capacitor structure including: a plurality of first conductive patterns sequentially stacked on the lower insulating film; a plurality of second conductive patterns on the plurality of first conductive patterns; a first via at a first side of the capacitor structure, wherein the first via physically contacts and is electrically connected to the plurality of first conductive patterns, and is not electrically connected to the plurality of second conductive patterns; and a second via at a second side of the capacitor structure, wherein the second via physically contacts and is electrically connected to the plurality of second conductive patterns, and is not electrically connected to the plurality of first conductive patterns.

公开(公告)号：US20250076144A1

公开(公告)日：2025-03-06

申请号：US18820787

申请日：2024-08-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seunghun KIM ,  Minjung KIM ,  Yujin HAN ,  Taemin KIM ,  Jiho UH ,  Jaesung YU ,  Jinseok LEE

IPC: G01L27/00 ,  G01L9/00

Abstract: A pressure gauge zero point calibration method of a pressure gauge having a diaphragm includes performing a first external zero point calibration at a first time, performing a second external zero point calibration at a second time, the second time occurring after the first time, generating a first usage during a first zero point interval, the first zero point interval spanning from the first time to the second time, determining a usage-based offset slope by dividing a zero point offset difference by the first usage, generating a second usage during a second zero point interval, the second zero point interval spanning from the second time to a third time, the third time occurring after the second time, obtaining a third zero point offset based on the usage-based offset slope and the second usage, and applying the third zero point offset to the pressure gauge, the pressure gauge having a diaphragm.

公开(公告)号：US20230175124A1

公开(公告)日：2023-06-08

申请号：US17878622

申请日：2022-08-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Songyi BAEK ,  Youngtack SIM ,  Jiwon KWAK ,  Sejin KYUNG ,  Daewee KONG ,  Taemin KIM

IPC: C23C16/44 ,  C23C16/455 ,  H01L21/02

CPC classification number: C23C16/4405 ,  C23C16/45546 ,  H01L21/0217

Abstract: A substrate processing system includes: a process chamber that performs a semiconductor process on a substrate; a first oxygen supply unit; a first chamber that receives a gas containing oxygen (O2) from the first oxygen supply unit, receives exhaust gases discharged from the process chamber, and oxidizes the exhaust gas using the oxygen supplied from the first oxygen supply unit; a second chamber connected to the first chamber, and that receives a first treatment gas from the first chamber and bums the first treatment gas; a third chamber connected to the second chamber, and that receives a second treatment gas from the second chamber and performs a wetting treatment of the second treatment gas; and a tank disposed below the first to third chambers and connected to each of the first to third chambers.

公开(公告)号：US20230081402A1

公开(公告)日：2023-03-16

申请号：US17899832

申请日：2022-08-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hwanyeol PARK ,  Sejun PARK ,  Junhyoung CHO ,  Sejin KYUNG ,  Daewee KONG ,  Taemin KIM

IPC: H01L21/30

Abstract: A method of manufacturing a semiconductor device includes preparing a substrate including cell regions and a scribe lane region, forming circuit blocks in the cell regions of the substrate, the substrate including a first surface and a second surface, forming a bias pad on the first surface of the substrate, such that the bias pad is in the scribe lane region of the substrate, bonding a deuterium exchange structure to the second surface of the substrate, implanting deuterium into the deuterium exchange structure using plasma processing, and applying a first voltage to the bias pad, such that the deuterium is diffused from the deuterium exchange structure into the substrate through the second surface of the substrate.