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公开(公告)号：US20230114604A1
公开(公告)日：2023-04-13
申请号：US18065910
申请日：2022-12-14
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yong Seok HAN , Sung Woo KIM , Jin A KIM , Tae Hyung KIM , Kun Su PARK , Yuho WON , Jeong Hee LEE , Eun Joo JANG , Hyo Sook JANG
Abstract: A quantum dot including a core that includes a first semiconductor nanocrystal including zinc and selenium, and optionally sulfur and/or tellurium, and a shell that includes a second semiconductor nanocrystal including zinc, and at least one of sulfur or selenium is disclosed. The quantum dot has an average particle diameter of greater than or equal to about 13 nm, an emission peak wavelength in a range of about 440 nm to about 470 nm, and a full width at half maximum (FWHM) of an emission wavelength of less than about 25 nm. A method for preparing the quantum dot, a quantum dot-polymer composite including the quantum dot, and an electronic device including the quantum dot is also disclosed.
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公开(公告)号：US20220416187A1
公开(公告)日：2022-12-29
申请号：US17851211
申请日：2022-06-28
Applicant: Samsung Electronics Co., Ltd.
Inventor： Tae Hyung KIM , Heejae CHUNG , Eun Joo JANG , Sujin PARK , Yuho WON
IPC: H01L51/50
Abstract: An electroluminescent display device and a light emitting device including a blue light emitting layer include a first electrode, a second electrode, and a light emitting layer between the first electrode and the second electrode. The light emitting layer includes a blue light emitting layer including a plurality of nanostructures, the plurality of nanostructures does not include cadmium. On an application of a bias voltage, the blue light emitting layer is configured to emit light of an emission peak wavelength (λmax) in a range of greater than or equal to about 445 nm and less than or equal to about 480 nm. During a bias voltage change from a first voltage to a second voltage, the second voltage being greater than the first voltage by at least about 5 volts, the emission peak wavelength (λmax) of the blue light emitting layer may exhibit a first emission peak wavelength (a 1st λmax wavelength) that is less than an emission peak wavelength at the first voltage (λmax@first voltage) and an emission peak wavelength at the second voltage (λmax@second voltage), and during the bias voltage change, a change width in emission peak wavelength (λmax) is less than or equal to about 4 nm.
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公开(公告)号：US20220137286A1
公开(公告)日：2022-05-05
申请号：US17576895
申请日：2022-01-14
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Tae Hyung KIM , Eun Joo JANG , Shin Ae JUN , Hyun A KANG , Yongwook KIM , Na Youn WON , Hyo Sook JANG
IPC: F21V8/00 , G02F1/13357 , G02F1/1335
Abstract: A light source includes a light emitting element which emits light, and a light conversion layer which converts the light emitted from the light emitting element into white light and emits the white light, where the light conversion layer includes a resin and a quantum dot material mixed with the resin, and a red apex of a color region of the white light is positioned in a region of 0.65
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公开(公告)号：US20190393418A1
公开(公告)日：2019-12-26
申请号：US16451443
申请日：2019-06-25
Applicant: SAMSUNG ELECTRONICS CO., LTD
Inventor： Jaejun CHANG , O Hyun KWON , Tae Hyung KIM , Jhun Mo SON , Sang Jin LEE , Eun Joo JANG , Dae Young CHUNG
Abstract: A semiconductor nanocrystal-ligand composite, including a semiconductor nanocrystal and a ligand layer including an organic ligand coordinated on a surface of the semiconductor nanocrystal, wherein the organic ligand includes a compound represented by Chemical Formula 1, compound represented by Chemical Formula 2, or a combination thereof, and wherein Chemical Formula 1 and Chemical Formula 2 are the same as described in detailed herein.
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公开(公告)号：US20190276738A1
公开(公告)日：2019-09-12
申请号：US16298276
申请日：2019-03-11
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Tae Hyung KIM , Jeong Hee LEE , Sung Woo KIM , Jin A KIM , Yuho WON , Eun Joo JANG
Abstract: A quantum dot includes a core including a first semiconductor nanocrystal material including zinc, tellurium, and selenium; and a semiconductor nanocrystal shell disposed on (e.g., directly on) the core and including zinc, selenium, and sulfur, wherein the quantum dot does not include cadmium, wherein a size of the quantum dot is greater than or equal to about 10 nanometers (nm) and the quantum dot includes at least four protrusions. A production method thereof and an electronic device including the same are also disclosed.
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Patent Agency Ranking
公开(公告)号：US20180327665A1
公开(公告)日：2018-11-15
申请号：US15976197
申请日：2018-05-10
Applicant: SAMSUNG ELECTRONICS CO., LTD. of
Inventor： Jeong Hee LEE , Eun Joo JANG , Hyun A KANG , Tae Hyung KIM
IPC: C09K11/88
CPC classification number: C09K11/883 , C09K11/02 , C09K11/565 , Y10S977/774 , Y10S977/824 , Y10S977/892 , Y10S977/95
Abstract: A semiconductor nanocrystal particle including zinc (Zn), tellurium (Te) and selenium (Se), a method of producing the same, and an electronic device including the same are disclosed. In the semiconductor nanocrystal particle, an amount of the tellurium is less than an amount of the selenium, the particle includes a core including a first semiconductor material including zinc, tellurium, and selenium and a shell disposed on at least a portion of the core and including a second semiconductor material having a different composition from the first semiconductor material, and the semiconductor nanocrystal particle emits blue light including a maximum peak emission at a wavelength of less than or equal to about 470 nanometers.
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公开(公告)号：US20170306222A1
公开(公告)日：2017-10-26
申请号：US15644984
申请日：2017-07-10
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jeong Hee LEE , Hyun A KANG , Eun Joo JANG , Sang Eui LEE , Shin Ae JUN , Oul CHO , Tae Gon KIM , Tae Hyung KIM
CPC classification number: C09K11/025 , B24B1/00 , C01B17/20 , C08L33/04 , C09K11/59 , G02F1/1335 , G02F1/3615
Abstract: A method of grinding a semiconductor nanocrystal-polymer composite, the method including obtaining a semiconductor nanocrystal-polymer composite including a semiconductor nanocrystal and a first polymer, contacting the semiconductor nanocrystal-polymer composite with an inert organic solvent; and grinding the semiconductor nanocrystal-polymer composite in the presence of the inert organic solvent to grind the semiconductor nanocrystal-polymer composite.
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8.发明申请公开(公告)号：US20150041715A1
公开(公告)日：2015-02-12
申请号：US14453723
申请日：2014-08-07
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jeong Hee LEE , Hyun A KANG , Eun Joo JANG , Sang Eui LEE , Shin Ae JUN , Oul CHO , Tae Gon KIM , Tae Hyung KIM
CPC classification number: C09K11/025 , B24B1/00 , C09K11/70
Abstract: A method of grinding a semiconductor nanocrystal-polymer composite, the method including obtaining a semiconductor nanocrystal-polymer composite including a semiconductor nanocrystal and a first polymer, contacting the semiconductor nanocrystal-polymer composite with an inert organic solvent; and grinding the semiconductor nanocrystal-polymer composite in the presence of the inert organic solvent to grind the semiconductor nanocrystal-polymer composite.
Abstract translation: 一种研磨半导体纳米晶体 - 聚合物复合材料的方法，该方法包括获得包含半导体纳米晶体和第一聚合物的半导体纳米晶体 - 聚合物复合物，使半导体纳米晶体 - 聚合物复合材料与惰性有机溶剂接触; 并在惰性有机溶剂存在下研磨半导体纳米晶体 - 聚合物复合物，研磨半导体纳米晶体 - 聚合物复合材料。
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公开(公告)号：US20130203195A1
公开(公告)日：2013-08-08
申请号：US13762983
申请日：2013-02-08
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Tae Hyung KIM , Gi Bum KIM , Yu Seung KIM , Seung Woo CHOI , Gyeong Seon PARK , Shi Young LEE
IPC: H01L33/00
CPC classification number: H01L33/005 , H01L33/0079
Abstract: A method of manufacturing a semiconductor light emitting device, includes forming a light emitting structure on a growth substrate. The light emitting structure includes a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer. A support substrate having one or more protrusions formed on one surface thereof is prepared. The one or more protrusions formed on the one surface of the support substrate are attached to one surface of the light emitting structure. The growth substrate is separated from the light emitting structure.
Abstract translation: 一种制造半导体发光器件的方法，包括在生长衬底上形成发光结构。 发光结构包括第一导电半导体层，有源层和第二导电半导体层。 制备在其一个表面上形成有一个或多个突起的支撑基板。 形成在支撑基板的一个表面上的一个或多个突起附接到发光结构的一个表面。 生长衬底与发光结构分离。
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公开(公告)号：US20240254388A1
公开(公告)日：2024-08-01
申请号：US18630264
申请日：2024-04-09
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yuho WON , Sung Woo KIM , Jin A KIM , Jeong Hee LEE , Tae Hyung KIM , Eun Joo JANG
IPC: C09K11/88 , B82Y20/00 , B82Y40/00 , C09K11/02 , H05B33/14 , H10K50/115 , H10K50/15 , H10K50/16 , H10K50/17
CPC classification number: C09K11/883 , C09K11/02 , H05B33/14 , H10K50/115 , H10K50/15 , H10K50/16 , H10K50/17 , H10K50/171 , B82Y20/00 , B82Y40/00
Abstract: A quantum dot including: a core including a first semiconductor nanocrystal material including zinc, tellurium, and selenium; and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc, selenium, and sulfur, wherein the quantum dot does not include cadmium, and in the quantum dot, a mole ratio of the sulfur with respect to the selenium is less than or equal to about 2.4:1. A production method of the quantum dot and an electronic device including the same are also disclosed.
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